Identifying the hazard characteristics of powder byproducts generated from semiconductor fabrication processes

Physicochemical Characteristics and Occupational Exposure of Silica Particles as Byproducts in a Semiconductor Sub Fab

This study aimed to elucidate the physicochemical characteristics and occupational exposure of silica powder and airborne particles as byproducts generated from the first scrubbers of chemical vapor deposition and diffusion processes during maintenance in a semiconductor facility sub fab to reduce unknown risk factors. The chemical composition, size, morphology, and crystal structure of powder and airborne particles as byproducts were investigated using a scanning electron microscopy and transmission electron microscopy equipped with an energy dispersive X-ray spectroscopy, and an X-ray diffraction. The number and mass concentration measurements of airborne particles were performed by using an optical particle sizer of a direct-reading aerosol monitor. All powder and airborne particle samples were mainly composed of oxygen (O) and silicon (Si), which means silica. The byproduct particles were spherical and/or nearly spherical and the particle size ranged from 10 to 90 nm, based on primary particles. Most of the particles were usually agglomerated within a particle size range from approximately 100 nm to 35 µm. In addition, most of the powder samples exhibited diffraction patterns with a broad and relatively low intensity at 2θ degrees 21.6–26.7°, which is similar to that of pure amorphous silica. The above results show the byproduct particles are amorphous silica, which are considered a less toxic foam compared to crystalline silica. The number and mass concentrations of PM10 (particles less than 10 µm in diameter) ranged from 4.250–78.466 particles/cm³ and 0.939–735.531 µg/m³, respectively. In addition, 0.3–1.0 and 2.5–10 µm particles occupied the highest portion of the number and mass concentrations, respectively. Meanwhile, several peak exposure patterns were observed at a specific step, which is the process of removing powder particles on the inner chamber and cleaning the chamber by using a vacuum cleaner and a clean wiper, during the maintenance task.

Characterization and exposure measurement for indium oxide nanofibers generated as byproducts in the LED manufacturing environment

This article aimed to elucidate the physicochemical characteristics and exposure concentration of powder and airborne particles as byproducts generated from indium tin oxide thin film process by an electron beam evaporation method during maintenance in light-emitting diode manufacturing environment. The chemical composition, size, shape, and crystal structure of powder and airborne particles as byproducts were investigated using a scanning electron microscope equipped with energy dispersive spectrometer, and an X-ray diffractometer. The number and mass concentration measurements of airborne particles were performed by using an optical particle counter of direct-reading aerosol monitor and an inductively coupled plasma-mass spectrometry after sampling, respectively. The airborne particles are composed of oxygen and indium. On the other hand, the powder byproducts consist mostly of oxygen and indium, but tin was found as a minor component. The shapes of the airborne and powder byproducts were fiber type. The length and diameter of fibrous particles were approximately 500-2,000 nm and 30-50 nm, respectively. The powder byproducts indicated indium oxide nanofibers with a rhombohedral structure. On the other hand, the indium oxide used as a source material in the preparation of ITO target showed spherical morphology with a body-centered cubic structure, and it was the same as that of the pure crystalline indium oxide powder. During maintenance, the number concentrations ranged from 350-75,693 particles/ft(3), and arithmetic mean±standard deviation and geometric mean±geometric standard deviation were 11,624±15,547 and 4,846±4.12 particles/ft(3), respectively. Meanwhile, under the same conditions, the airborne mass concentrations of the indium based on respirable particle size (3.5 µm cut-point 50%) were 0.09-0.19 µg/m(3). Physicochemical characteristics of nanoparticle can affect toxicity so the fact that shape and crystal structure have changed is important. Thus, nanoparticle occupational toxicology greatly needs observations like this.

Exposure Characteristics of Nanoparticles as Process By-products for the Semiconductor Manufacturing Industry

This study aims to elucidate the exposure properties of nanoparticles (NPs; <100 nm in diameter) in semiconductor manufacturing processes. The measurements of airborne NPs were mainly performed around process equipment during fabrication processes and during maintenance. The number concentrations of NPs were measured using a water-based condensation particle counter having a size range of 10-3,000 nm. The chemical composition, size, and shape of NPs were determined by scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy. The resulting concentrations of NPs ranged from 0.00-11.47 particles/cm(3). The concentration of NPs measured during maintenance showed a tendency to increase, albeit incrementally, compared to that measured during normal conditions (under typical process conditions without maintenance). However, the increment was small. When comparing the mean number concentration and standard deviation (n ± σ) of NPs, the chemical mechanical polishing (CMP) process was the highest (3.45 ± 3.65 particles/cm(3)), and the dry etch (ETCH) process was the lowest (0.11 ± 0.22 particles/cm(3)). The major NPs observed were silica (SiO2) and titania (TiO2) particles, which were mainly spherical agglomerates ranging in size from 25-280 nm. Sampling of semiconductor processes in CMP, chemical vapor deposition, and ETCH reveled NPs were <100 nm in those areas. On the other hand, particle size exceeded 100 nm in diffusion, metallization, ion implantation, and wet cleaning/etching process. The results show that the SiO2 and TiO2 are the major NPs present in semiconductor cleanroom environments.