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Citation(s) in
RCA
8
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ACTA ACUSTICA UNITED WITH ACUSTICA (7)
ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS VOLUME 58 (1)
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Multidisciplinary Sciences (8)
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Brozel MR
, Newman RC, Butler J, Ritson A, Stirland DJ, Whitehead C.
Electrical compensation in semi-insulating gallium arsenide.
ACTA ACUST UNITED AC
2001. [DOI:
10.1088/0022-3719/11/9/023
]
[
Citation(s) in
RCA
: 32
]
[
Impact Index Per Article: 1.4
]
[
Reference Citation Analysis
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[Indexed: 11/11/2022]
Number
Cited by Other Article(s)
1
Instone T
, Eaves L. Deep centre photoluminescence spectra of GaAs(Cr, Si).
ACTA ACUST UNITED AC
2001. [DOI:
10.1088/0022-3719/11/18/007
]
[
Citation(s) in
RCA
: 20
]
[
Impact Index Per Article: 0.9
]
[
Reference Citation Analysis
]
[
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[Indexed: 11/12/2022]
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2
Szawelska HR
, Allen JW. Photocapacitance measurements of the two acceptor levels of chromium in GaAs.
ACTA ACUST UNITED AC
2001. [DOI:
10.1088/0022-3719/12/16/022
]
[
Citation(s) in
RCA
: 20
]
[
Impact Index Per Article: 0.9
]
[
Reference Citation Analysis
]
[
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[Indexed: 11/11/2022]
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3
Eaves L
, Williams PJ. Decay of the deep-level extrinsic photoconductivity response of n-GaAs(Cr,Si) at liquid-helium temperature.
ACTA ACUST UNITED AC
2001. [DOI:
10.1088/0022-3719/12/18/005
]
[
Citation(s) in
RCA
: 9
]
[
Impact Index Per Article: 0.4
]
[
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[Indexed: 11/11/2022]
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4
Martin GM
, Mitonneau A, Pons D, Mircea A, Woodward DW. Detailed electrical characterisation of the deep Cr acceptor in GaAs.
ACTA ACUST UNITED AC
2000. [DOI:
10.1088/0022-3719/13/20/009
]
[
Citation(s) in
RCA
: 137
]
[
Impact Index Per Article: 5.7
]
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[Indexed: 11/12/2022]
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5
Clark MG
. Calculation of carrier equilibrium effects in transition-metal doped semiconductors with application to Cr-doped GaAs.
ACTA ACUST UNITED AC
2000. [DOI:
10.1088/0022-3719/13/12/013
]
[
Citation(s) in
RCA
: 9
]
[
Impact Index Per Article: 0.4
]
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[Indexed: 11/11/2022]
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6
Whitehouse JE
, Goswami NK, Newman RC. New EPR data for chromium in electron-irradiated p-type GaAs: the observation of Cr complexes.
ACTA ACUST UNITED AC
2000. [DOI:
10.1088/0022-3719/14/6/005
]
[
Citation(s) in
RCA
: 14
]
[
Impact Index Per Article: 0.6
]
[
Reference Citation Analysis
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[Indexed: 11/11/2022]
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7
Point Defects in GaP, GaAs, and InP.
ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS VOLUME 58
1982. [DOI:
10.1016/s0065-2539(08)61022-7
]
[
Citation(s) in
RCA
: 63
]
[
Impact Index Per Article: 1.5
]
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[Indexed: 02/04/2023]
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8
Picoli G
, Deveaud B, Galland D. Interpretation of luminescence in GaAs : Cr : 0.839 eV and 0.574 eV lines.
ACTA ACUST UNITED AC
1981. [DOI:
10.1051/jphys:01981004201013300
]
[
Citation(s) in
RCA
: 30
]
[
Impact Index Per Article: 0.7
]
[
Reference Citation Analysis
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[Indexed: 11/14/2022]
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