The crystal structure of IV-VI compounds. II. A microscopic model for cubic/rhombohedral materials

Persistence of Structural Distortion and Bulk Band Rashba Splitting in SnTe above Its Ferroelectric Critical Temperature

The ferroelectric semiconductor α-SnTe has been regarded as a topological crystalline insulator, and the dispersion of its surface states has been intensively measured with angle-resolved photoemission spectroscopy (ARPES) over the past decade. However, much less attention has been given to the impact of the ferroelectric transition on its electronic structure, and in particular on its bulk states. Here, we investigate the low-energy electronic structure of α-SnTe with ARPES and follow the evolution of the bulk-state Rashba splitting as a function of temperature, across its ferroelectric critical temperature of about Tc ≈ 110 K. Unexpectedly, we observe a persistent band splitting up to room temperature, which is consistent with an order-disorder contribution of local dipoles to the phase transition that requires the presence of fluctuating dipoles above Tc. We conclude that no topological surface state can occur under these conditions at the (111) surface of SnTe, at odds with recent literature.

Metavalent Bonding in 2D Chalcogenides: Structural Origin and Chemical Mechanisms

An unusual set of anomalous functional properties of rocksalt crystals of Group IV chalcogenides were recently linked to a kind of bonding termed as metavalent bonding (MVB) which involves violation of the 8-N rule. Precise mechanisms of MVB and the relevance of lone pair of Group IV cations are still debated. With restrictions of low dimensionality on the possible atomic coordination, 2D materials provide a rich platform for exploration of MVB. Here, we present first-principles theoretical analysis of the nature of bonding in five distinct 2D lattices of Group IV chalcogenides MX (M: Sn, Pb, Ge and X: S, Se, Te), in which the natural out-of-plane expression of the lone pair versus in-plane bonding can be systematically explored. While their honeycomb lattices respecting the 8-N rule are shown to exhibit covalent bonding, their square and orthorhombic structures exhibit MVB only in-plane, with cationic lone pair activating the out-of-plane structural puckering that controls their relative stability. Anomalies in Born-effective charges, dielectric constants, Grüneisen parameters occur only in their in-plane behaviour, confirming MVB is confined strictly to 2D and originates from p-p orbital interactions. Our work opens up directions for chemical design of MVB based 2D materials and their heterostructures.

Revisiting the Nature of Chemical Bonding in Chalcogenides to Explain and Design their Properties

Quantum chemical bonding descriptors have recently been utilized to design materials with tailored properties. Their usage to facilitate a quantitative description of bonding in chalcogenides as well as the transition between different bonding mechanisms is reviewed. More importantly, these descriptors can also be employed as property predictors for several important material characteristics, including optical and transport properties. Hence, these quantum chemical bonding descriptors can be utilized to tailor material properties of chalcogenides relevant for thermoelectrics, photovoltaics, and phase-change memories. Relating material properties to bonding mechanisms also shows that there is a class of materials, which are characterized by unconventional properties such as a pronounced anharmonicity, a large chemical bond polarizability, and strong optical absorption. This unusual property portfolio is attributed to a novel bonding mechanism, fundamentally different from ionic, metallic, and covalent bonding, which is called "metavalent." In the concluding section, a number of promising research directions are sketched, which explore the nature of the property changes upon changing bonding mechanism and extend the concept of quantum chemical property predictors to more complex compounds.

Metavalent Bonding Origins of Unusual Properties of Group IV Chalcogenides

A distinct type of metavalent bonding (MVB) is recently proposed to explain an unusual combination of anomalous functional properties of group IV chalcogenide crystals, whose electronic mechanisms and origin remain controversial. Through theoretical analysis of evolution of bonding along continuous paths in structural and chemical composition space, emergence of MVB in rocksalt chalcogenides is demonstrated as a consequence of weakly broken symmetry of parent simple-cubic crystals of Group V metalloids. High electronic degeneracy at the nested Fermi surface of parent metal drives spontaneous breaking of its translational symmetry with structural and chemical fields, which open up a small energy gap and mediate strong coupling between conduction and valence bands making metavalent crystals highly polarizable, conductive, and sensitive to bond-lengths. Stronger symmetry-breaking structural and chemical fields, however, transform them discontinuously to covalent and ionic semiconducting states. MVB involves bonding-antibonding pairwise interactions alternating along linear chains of at least five atoms, which facilitate long-range electron transfer in response to polar fields causing unusual properties. The precise picture of MVB predicts anomalous second-order Raman scattering as an addition to set off their unusual properties, and will guide in design of new metavalent materials with improved thermoelectric, ferroelectric and nontrivial electronic topological properties.

Temperature-driven narrowing of the insulating gap as a precursor of the insulator-to-metal transition: Implications for the electronic structure of solids

We present a microscopic picture rationalizing the surprisingly steep decrease in the bandgap with temperature in insulators, crystalline or otherwise. The gap narrowing largely results from fluctuations of long-wavelength optical phonons-when the latter are present-or their disordered analogs if the material is amorphous. We elaborate on this notion to show that possibly with the exception of weakly bound solids made of closed-shell electronic configurations, the existence of an insulating gap or pseudogap in a periodic solid implies that optical phonons must be present, too. This means that in an insulating solid, the primitive cell must have at least two atoms and/or that a charge density wave is present, with the possible exception of weakly bonded solids such as rare-gas or ferromagnetic Wigner crystals. As a corollary, a (periodic) elemental solid held together by nonclosed shell interactions and whose primitive unit contains only one atom will ordinarily be a metal, consistent with observation. Consequences of the present picture for Wigner solids are discussed. A simple field theory of the metal-insulator transition is constructed that directly ties long-wavelength optical vibrations with fluctuations of an order parameter for the metal-insulator transition. The order parameter is shown to have at least two components, yet no Goldstone mode arises as a result of the transition.

Water Splits To Degrade Two-Dimensional Group-IV Monochalcogenides in Nanoseconds

The experimental exfoliation of layered group-IV monochalcogenides-semiconductors isostructural to black phosphorus-using processes similar to those followed in the production of graphene or phosphorene has turned out unsuccessful thus far, as if the chemical degradation observed in black phosphorus was aggravated in these monochalcogenides. Here, we document a facile dissociation of water by these materials within 10 ns from room-temperature Car-Parrinello molecular dynamics calculations under standard temperature and pressure conditions. These results suggest that humidity must be fully eradicated to exfoliate monolayers successfully, for instance, by placing samples in a hydrophobic solution during mechanical exfoliation. From another materials perspective, these two-dimensional materials that create individual hydrogen ions out of water without illumination may become relevant for applications in hydrogen production and storage.

Topological quantum phase transition from mirror to time reversal symmetry protected topological insulator

Topological insulators constitute a new phase of matter protected by symmetries. Time-reversal symmetry protects strong topological insulators of the Z₂ class, which possess an odd number of metallic surface states with dispersion of a Dirac cone. Topological crystalline insulators are merely protected by individual crystal symmetries and exist for an even number of Dirac cones. Here, we demonstrate that Bi-doping of Pb_1-x Sn _x Se (111) epilayers induces a quantum phase transition from a topological crystalline insulator to a Z₂ topological insulator. This occurs because Bi-doping lifts the fourfold valley degeneracy and induces a gap at [Formula: see text], while the three Dirac cones at the [Formula: see text] points of the surface Brillouin zone remain intact. We interpret this new phase transition as caused by a lattice distortion. Our findings extend the topological phase diagram enormously and make strong topological insulators switchable by distortions or electric fields.Transitions between topological phases of matter protected by different symmetries remain rare. Here, Mandal et al. report a quantum phase transition from a topological crystalline insulator to a Z₂ topological insulator by doping Bi into Pb_1-x Sn _x Se (111) thin films.

Temperature and isotope effects on the thermoelectric properties in SnTe

The temperature and Sn isotope effects on SnTe are investigated using the hybrid scheme that combines ab initio molecular dynamics and lattice dynamics (AIMD  +  LD). The unstable softening of TA phonon mode at 0 K in cubic phase SnTe disappears and the TO mode is stiffened by considering the temperature effect, in agreement with the inelastic neutron scattering (INS) observations. A linear dependence on isotope mass of phonon frequency, lifetime, and mean free path for isolate phonon mode is observed with the possibility of positive, negative, and nearly zero shifts. The lattice thermal conductivity ([Formula: see text]) shows saturation characteristic as Sn isotope mass increases to ¹²⁰SnTe, with an increase rate of  ∼2.1% from ¹¹²SnTe to ¹²⁴SnTe. Considering the effects of partial isotope doping, we obtain a reduced [Formula: see text] with respect to the undoped case. The [Formula: see text] is reduced by  ∼14.6% at 600 K when considering the volumetric expansion.

Role of Nanostructuring and Microstructuring in Silver Antimony Telluride Compounds for Thermoelectric Applications

Thermoelectric (TE) materials are of utmost significance for conversion of heat flux into electrical power in the low-power regime. Their conversion efficiency depends strongly on the microstructure. AgSbTe₂-based compounds are high-efficiency TE materials suitable for the mid-temperature range. Herein, we explore an Ag_16.7Sb₃₀Te_53.3 alloy (at %) subjected to heat treatments at 380 °C for different durations aimed at nucleation and coarsening of Sb₂Te₃-precipitates. To characterize the Sb₂Te₃-precipitation, we use a set of methods combining thermal and electrical measurements in concert with transmission electron microscopy and atom probe tomography. We find correlations between the measured TE transport coefficients and the applied heat treatments. Specifically, the lowest electrical and thermal conductivity values are obtained for the as-quenched state, whereas the highest values are observed for alloys aged for 8 h. In turn, long-term heat treatments result in intermediate values of transport coefficients. We explain these findings in terms of interplay between precipitate formation and variations in the matrix composition, highlighting the importance of thermal stability of the material under service conditions.

The origin of incipient ferroelectricity in lead telluride

The interactions between electrons and lattice vibrations are fundamental to materials behaviour. In the case of group IV–VI, V and related materials, these interactions are strong, and the materials exist near electronic and structural phase transitions. The prototypical example is PbTe whose incipient ferroelectric behaviour has been recently associated with large phonon anharmonicity and thermoelectricity. Here we show that it is primarily electron-phonon coupling involving electron states near the band edges that leads to the ferroelectric instability in PbTe. Using a combination of nonequilibrium lattice dynamics measurements and first principles calculations, we find that photoexcitation reduces the Peierls-like electronic instability and reinforces the paraelectric state. This weakens the long-range forces along the cubic direction tied to resonant bonding and low lattice thermal conductivity. Our results demonstrate how free-electron-laser-based ultrafast X-ray scattering can be utilized to shed light on the microscopic mechanisms that determine materials properties.

Group IV–VI materials often exist in a state near an electronic or structural phase transition. Here, the authors use ultrafast X-ray scattering to show that coupling of band-edge electrons and phonons causes the ferroelectric instability observed in lead telluride.

Phonon self-energy and origin of anomalous neutron scattering spectra in SnTe and PbTe thermoelectrics

The anharmonic lattice dynamics of rock-salt thermoelectric compounds SnTe and PbTe are investigated with inelastic neutron scattering (INS) and first-principles calculations. The experiments show that, surprisingly, although SnTe is closer to the ferroelectric instability, phonon spectra in PbTe exhibit a more anharmonic character. This behavior is reproduced in first-principles calculations of the temperature-dependent phonon self-energy. Our simulations reveal how the nesting of phonon dispersions induces prominent features in the self-energy, which account for the measured INS spectra and their temperature dependence. We establish that the phase space for three-phonon scattering processes, combined with the proximity to the lattice instability, is the mechanism determining the complex spectrum of the transverse-optic ferroelectric mode.

Band structure of SnTe studied by photoemission spectroscopy

We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p bands. Our study reveals the conjectured complex Fermi surface structure near the L points showing topological changes in the bands from disconnected pockets, to open tubes, and then to cuboids as the binding energy increases, resolving lingering issues about the electronic structure. The chemical potential at the crystal surface is found to be 0.5 eV below the gap, corresponding to a carrier density of p=1.14 × 10(21)  cm(-3) or 7.2 × 10(-2) holes per unit cell. At a temperature below the cubic-rhombohedral structural transition a small shift in spectral energy of the valance band is found, in agreement with model predictions.

A map for phase-change materials

Phase-change materials are characterized by a unique property portfolio well suited for data storage applications. Here, a first treasure map for phase-change materials is presented on the basis of a fundamental understanding of the bonding characteristics. This map is spanned by two coordinates that can be calculated just from the composition, and represent the degree of ionicity and the tendency towards hybridization ('covalency') of the bonding. A small magnitude of both quantities is an inherent characteristic of phase-change materials. This coordinate scheme enables a prediction of trends for the physical properties on changing stoichiometry.