Hydrogen-related deep levels in proton-bombarded silicon

Buried centimeter-long micro- and nanochannel arrays in porous silicon and glass

We developed a simple process to fabricate deeply buried micro- and nanoscale channels in glass and porous silicon from bulk silicon using a combination of ion beam irradiation, electrochemical anodization and high temperature oxidation. The depth, width and length of these structures can be controllably varied and we successfully fabricated an array of centimeter-long buried micro- and nanochannels. This process allows densely packed, arbitrary-shaped channel geometries with micro- to nanoscale dimensions to be produced in a three-dimensional multilevel architecture, providing a route to fabricate complex devices for use in nanofluidics and lab-on-a-chip systems. We demonstrate the integration of these channels with large reservoirs for DNA linearization in high aspect ratio nanochannels.

Phosphorus-doped silicon nanocrystals exhibiting mid-infrared localized surface plasmon resonance

Localized surface plasmon resonances (LSPRs) enable tailoring of the optical response of nanomaterials through their free carrier concentration, morphology, and dielectric environment. Recent efforts to expand the spectral range of usable LSPR frequencies into the infrared successfully demonstrated LSPRs in doped semiconductor nanocrystals. Despite silicon's importance for electronic and photonic applications, no LSPRs have been reported for doped silicon nanocrystals. Here we demonstrate doped silicon nanocrystals synthesized via a nonthermal plasma technique that exhibits tunable LSPRs in the energy range of 0.07-0.3 eV or mid-infrared wavenumbers of 600-2500 cm(-1).

E center in silicon has a donor level in the band gap

It has been an accepted fact for more than 40 years that the E center in Si (the group-V impurity--vacancy pair)--one of the most studied defects in semiconductors--has only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction band. We now demonstrate that it has a second level, situated in the lower half of the band gap at 0.27 eV above the valence band. The existence of this level, having a donor character, is disclosed by a combination of different transient-capacitance techniques and electronic-structure calculations. The finding seriously questions some diffusion-modeling approaches performed in the past.

Local vibrational modes of isolated hydrogen in germanium

Two distinct isolated hydrogen defects are observed in crystalline Ge by in situ infrared absorption spectroscopy. Implantation of protons into Ge at cryogenic temperatures gives rise to two intense absorption lines at 745 and 1794 cm(-1). The lines originate from distinct defects, each of which contains one H atom located on a <111> axis. The 1794-cm(-1) line is assigned to bond center H in the positive charge state, whereas the 745-cm(-1) line is ascribed to negatively charged H located on a <111> axis close to the tetrahedral site.