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For: Heine V, Jones RO. Electronic band structure and covalency in diamond-type semiconductors. ACTA ACUST UNITED AC 2002. [DOI: 10.1088/0022-3719/2/4/316] [Citation(s) in RCA: 201] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Number Cited by Other Article(s)
1
Lamichhane A. Absorption in narrow and wide gap materials. Heliyon 2023;9:e21507. [PMID: 37964851 PMCID: PMC10641224 DOI: 10.1016/j.heliyon.2023.e21507] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Revised: 10/20/2023] [Accepted: 10/23/2023] [Indexed: 11/16/2023]  Open
2
Jones RO. The chemical bond in solids-revisited. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022;34:343001. [PMID: 35636399 DOI: 10.1088/1361-648x/ac7494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Accepted: 05/30/2022] [Indexed: 06/15/2023]
3
Jones RO. Bonding in phase change materials: concepts and misconceptions. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018;30:153001. [PMID: 29480162 DOI: 10.1088/1361-648x/aab22e] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
4
Cui YT, Li GL, Oji H, Son JY. Investigation of group IVA elements combined with HAXPES and first-principles calculations. ACTA ACUST UNITED AC 2014. [DOI: 10.1088/1742-6596/502/1/012007] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
5
Davies JH. The mobility edge in amorphous silicon. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/13642818008245394] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
6
Chen LJ, Falicov LM. Pseudopotential calculation of the stacking fault energy in silicon. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/14786437408213549] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
7
García-Moliner F, Heine V, Rubio J. A new formalism for electron states at surfaces II. application to surface states. ACTA ACUST UNITED AC 2002. [DOI: 10.1088/0022-3719/2/10/313] [Citation(s) in RCA: 25] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
8
Jaros M, Vinsome PKW. Covalency in silicon, germanium and grey tin. ACTA ACUST UNITED AC 2002. [DOI: 10.1088/0022-3719/2/12/322] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
9
Inkson JC. Many-body effect at metal-semiconductor junctions. II. The self energy and band structure distortion. ACTA ACUST UNITED AC 2002. [DOI: 10.1088/0022-3719/6/8/004] [Citation(s) in RCA: 96] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
10
Hill R, Richardson D. The variation of energy gap with composition in ZnS-Te alloys. ACTA ACUST UNITED AC 2002. [DOI: 10.1088/0022-3719/6/5/009] [Citation(s) in RCA: 69] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
11
McNeil MB, Pearson WB, Bennett LH, Watson RE. Stabilization and chemical bonding in Zintl phases. ACTA ACUST UNITED AC 2002. [DOI: 10.1088/0022-3719/6/1/012] [Citation(s) in RCA: 24] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
12
Elices M, Yndurain F. Electronic surface states in Ge. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/5/12/003] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
13
Vinsome PKW, Richardson D. The charge density in zincblende semiconductors. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/4/18/022] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
14
Flores F, Louis E, Rubio J. Critique of the abrupt potential model in the theory of surface states. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/5/24/009] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
15
Wray EM, Allen JW. Crystal field spectra of 3dnimpurities in zinc selenide. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/4/4/012] [Citation(s) in RCA: 79] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
16
Yndurain F. Density of states and barrier height of metal-Si contacts. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/4/17/016] [Citation(s) in RCA: 46] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
17
Inglesfield JE. A new impurity calculation. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0305-4608/2/1/011] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
18
Herbert DC. Electron-phonon interaction and inter-valley scattering in semiconductors. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/6/18/008] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
19
Beleznay F. KKR-Z calculation of band structure in elementary semiconductors. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/3/9/008] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
20
Richardson D. Calculation of the charge distribution in zincblende alloy systems. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/4/16/004] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
21
Flores F, Rubio J. On the calculation of surface states for (111) faces of diamond lattices. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/6/13/003] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
22
Brust D. The effective mass and q dependent dielectric function of simple semiconductors. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/4/13/009] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
23
Inglesfield JE. Perturbation theory and chemical bonding in NaTl. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/4/9/021] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
24
Vinsome PKW, Jaros M. The microscopic dielectric function in silicon and diamond. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/3/10/016] [Citation(s) in RCA: 31] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
25
Calandra C, Bortolani V, Bertoni CM, Tosatti E. Dielectric matrix and covalent charge distribution of silicon. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/5/22/002] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
26
Jones RO. Model calculation of surface states in silicon. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/5/13/011] [Citation(s) in RCA: 26] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
27
Morgan GJ, Shahtahmasebi N. Screened ions in perfect solids-a model calculation. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/6/23/013] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
28
Inkson JC. Dielectric response in semiconductors. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/7/8/021] [Citation(s) in RCA: 22] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
29
Hill R. Energy-gap variations in semiconductor alloys. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/7/3/009] [Citation(s) in RCA: 212] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
30
Louis E, Yndurain F. The crystal ionicity of the zincblende and rocksalt compounds as a function of the valence band gap. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/7/16/003] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
31
Elices M, Flores F, Louis E, Rubio J. Pseudopotential calculation of the surface band structure of Si(111) faces. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/7/17/012] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
32
Garcia-Moliner F, Flores F. Theory of electronic surface states in semiconductors. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/9/9/005] [Citation(s) in RCA: 36] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
33
Allen PB, Heine V. Theory of the temperature dependence of electronic band structures. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/9/12/013] [Citation(s) in RCA: 279] [Impact Index Per Article: 12.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
34
Holden AJ, Inkson JC. An investigation of collective modes in a model layer compound. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/10/1/010] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
35
Soma T. The electronic theory of III-V and II-VI tetrahedral compounds. I. Crystal energy and bulk modulus. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/11/13/014] [Citation(s) in RCA: 60] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
36
Vogl P. Dynamical effective charges in semiconductors: A pseudopotential approach. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/11/2/011] [Citation(s) in RCA: 122] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
37
Littlewood PB. The infrared effective charge in IV-VI compounds. II. A three dimensional calculation. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/12/21/012] [Citation(s) in RCA: 25] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
38
Littlewood PB. The dielectric constant of cubic IV-VI compounds. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/12/21/013] [Citation(s) in RCA: 36] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
39
Blow KJ, Inkson JC. Photoionisation of deep impurity levels in semiconductors. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/13/3/011] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
40
Littlewood PB. The crystal structure of IV-VI compounds. I. Classification and description. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/13/26/009] [Citation(s) in RCA: 161] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
41
Littlewood PB. The crystal structure of IV-VI compounds. II. A microscopic model for cubic/rhombohedral materials. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/13/26/010] [Citation(s) in RCA: 52] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
42
Inkson JC. Deep impurities in semiconductors. I. Evanescent states and complex band structure. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/13/3/012] [Citation(s) in RCA: 28] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
43
MacKinnon A, Kramer B. On the interpretation of the Compton profiles of diamond-structure semiconductors. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/13/1/008] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
44
Payne MC, Levi AFJ, Phillips WA, Inkson JC, Adkins CJ. Phonon structure of amorphous germanium by inelastic electron tunnelling spectroscopy. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/17/10/006] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
45
Taut M. Model calculation of the dielectric constant including local-field corrections. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/18/13/015] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
46
Cheng C, Needs RJ, Heine V. Inter-layer interactions and the origin of SiC polytypes. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/21/6/012] [Citation(s) in RCA: 174] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
47
Soma T, Kagaya HM. On the tetragonal β-Sn-type structure as the high-pressure phase. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0305-4608/17/1/001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
48
Levine ZH, Allan DC. Quasiparticle calculation of the dielectric response of silicon and germanium. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;43:4187-4207. [PMID: 9997769 DOI: 10.1103/physrevb.43.4187] [Citation(s) in RCA: 105] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
49
Shanker J, Dixit S. Dielectric Constants and Their Pressure and Temperature Derivatives for Ionic Crystals. ACTA ACUST UNITED AC 1991. [DOI: 10.1002/pssa.2211230102] [Citation(s) in RCA: 25] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
50
Jank W, Hafner J. Structural and electronic properties of the liquid polyvalent elements: The group-IV elements Si, Ge, Sn, and Pb. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:1497-1515. [PMID: 9993866 DOI: 10.1103/physrevb.41.1497] [Citation(s) in RCA: 67] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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