The application of the Morse potential function in ordered Cu3Au and Au3Cu alloys

On the elaboration of the next generation of thermodynamic models of solid solutions

Thermodynamic models of solid solutions used in computational thermochemistry have not been modernized in recent years. With the advent of fast and cheap computers, it is nowadays possible to add, at a minimal computational cost, physical ingredients such as coordination numbers, inter-atomic distances and classical interatomic potentials to the function describing the energetics of ordered and disordered solid solutions. As we show here, the integration of these elements into a robust statistical thermodynamic model of solution establishes natural connections with other deterministic and stochastic atomistic methods such as Monte Carlo and molecular dynamics simulations. Ultimately, all these numerical approaches need to be self-consistent and generate complementary sets of numerical thermo-physical properties. The present work proposes a new formalism to define the Gibbs free energy of ordered and disordered solid solutions. It allows for a complete prediction of the thermal, volumetric and compositional dependence of the Gibbs free energy by solving a constrained minimization problem. As a proof of concept, we explore the energetic behavior of pure face-centered cubic gold as well as the AuCu L1₀ ordered solution as a function of both temperature and pressure. We finally compare these results with the average properties obtained from classical molecular dynamics simulations and explain the origin of the existing differences between the two approaches based on how the temperature is accounted for in each method.

Molecular dynamics study on deformation and mechanics of nanoscale Au/Cu multilayers under indentation

The effects of individual layer thickness, indentation velocity, and temperature on the mechanical properties and mechanics of nanoscale Au/Cu multilayers under indentation were studied using molecular dynamics simulations based on the many-body embedded-atom potential. The simulation results show that layer interfaces act as strong barriers that resist the propagation of dislocations, even at an extremely small individual layer thickness of 3 nm. The number of dislocations increases significantly and the growth of dislocations decreases with decreasing individual layer thickness. There is no clear relationship between the magnitude of the required indentation force and the number of film layers; however, the average required indentation force increases with increasing indentation velocity and decreasing temperature. During indentation at a relatively low velocity, dislocation propagation is more significant; the number of disordered atoms significantly increases at a relatively high indentation velocity.