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Gagui S, Bendjeddou H, Meradji H, Chouial B, Hadjoudja B, Ghemid S, Khenata R, Kushwaha AK, Rai DP, Omran SB, Wang X. Phase stability and optoelectronic characteristics of Ba 1-xBe xS: a DFT-based simulation. J Mol Model 2020; 26:147. [PMID: 32435992 DOI: 10.1007/s00894-020-04370-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2019] [Accepted: 03/30/2020] [Indexed: 10/24/2022]
Abstract
The structural stability and optoelectronic properties of the ternary Ba1-xBexS alloys along with the pure binary compounds BaS and BeS in the rock-salt (B1) and zinc-blende (B3) phases were investigated by the density functional theory (DFT) within the full-potential linearized augmented plane wave (FP-LAPW) method implemented in the Wien2k package. The generalized gradient approximation of Wu and Cohen (WC-GGA) was used for the exchange-correlation potential (Vxc) to compute the equilibrium structural parameters, lattice constant (a), and bulk modulus (B). In addition to the GGA approach, the modified Becke-Johnson potential of Tran and Blaha (TB-mBJ) scheme coupled with the spin-orbit interaction was used to calculate the band gap energies. Results reveal that BaS, Ba0.75Be0.25S, and Ba0.5Be0.5S compounds are stable in the rock-salt phase, while Ba0.25Be0.75S and BeS are found to be stable in the zinc-blende phase. The computed results for the band structures and optical constants are compared with other available theoretical calculations and experimental measurements.
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Affiliation(s)
- S Gagui
- Département des Sciences de la Matière, Université Larbi Ben M'hidi, Oum el Bouaghi, Algeria.,Laboratory of Semiconductors, Department of Physics, University of Badji-Mokhtar, Annaba, Algeria
| | - H Bendjeddou
- Laboratoire LPR, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, Annaba, Algeria
| | - H Meradji
- Laboratoire LPR, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, Annaba, Algeria.
| | - B Chouial
- Laboratory of Semiconductors, Department of Physics, University of Badji-Mokhtar, Annaba, Algeria
| | - B Hadjoudja
- Laboratory of Semiconductors, Department of Physics, University of Badji-Mokhtar, Annaba, Algeria
| | - S Ghemid
- Laboratoire LPR, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, Annaba, Algeria
| | - R Khenata
- Laboratoire de Physique Quantique de la Matière et de la Modélisation Mathématique (LPQ3M), Université de Mascara, 29000, Mascara, Algeria
| | - A K Kushwaha
- Department of Physics, K.N. Govt. P.G. College, Gyanpur, Bhadohi, 221 304, India
| | - D P Rai
- Physical Sciences Research Center (PSRC), Department of Physics, Pachhunga University College, Aizawl, 796001, India
| | - S Bin Omran
- Department of Physics and Astronomy, College of Science, King Saud University, P.O., Box 2455, Riyadh, 11451, Saudi Arabia
| | - Xiaotian Wang
- School of Physical Science and Technology, Southwest University, Chongqing, 400715, People's Republic of China.
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