Electronic, magnetic and transport properties of rare-earth monopnictides

Emerging Nontrivial Topology in Ultrathin Films of Rare-Earth Pnictides

Thin films of rare-earth monopnictide (RE-V) semimetals are expected to turn into semiconductors due to quantum confinement effects (QCE), lifting the overlap between electron pockets at Brillouin zone edges (X) and hole pockets at the zone center (Γ). Instead, using LaSb as an example, we find the emergence of the quantum spin Hall (QSH) insulator phase in (001)-oriented films as the thickness is reduced to 7, 5, or 3 monolayers (MLs). This is attributed to a strong QCE on the in-plane electron pockets and the lack of quantum confinement on the out-of-plane pocket projected onto the zone center, resulting in a band inversion. Spin-orbit coupling (SOC) opens a sizable nontrivial gap in the band structure of ultrathin films. Such effect is anticipated to be general in rare-earth monopnictides and may lead to interesting phenomena when coupled with the 4f magnetic moments present in other members of this family of materials.

Synthesis, Structure, and Properties of Volatile Lanthanide Dialkyltriazenides

Several dialkyltriazenide complexes of the lanthanide elements neodymium, europium, and erbium have been prepared; these include the homoleptic complex Er(Bu^tN₃Bu^t)₃, the tetrahydrofuran monoadducts Ln(Bu^tN₃Bu^t)₃(THF) where Ln = Nd or Eu, and the lithium salts [Li(THF)][Ln(MeN₃Bu^t)₄] where Ln = Eu or Er. Crystal structures, nuclear magnetic resonance data, and infrared data are reported for all complexes. The di-tert-butyltriazenide complexes are thermally stable, sublime at reasonably low temperatures, and show smooth volatilization without decomposition, which make them potentially useful in lanthanide separation processes and as chemical vapor deposition precursors for lanthanide nitrides and other phases.

Above-ordering-temperature large anomalous Hall effect in a triangular-lattice magnetic semiconductor

While anomalous Hall effect (AHE) has been extensively studied in the past, efforts for realizing large Hall response have been mainly limited within intrinsic mechanism. Lately, however, a theory of extrinsic mechanism has predicted that magnetic scattering by spin cluster can induce large AHE even above magnetic ordering temperature, particularly in magnetic semiconductors with low carrier density, strong exchange coupling, and finite spin chirality. Here, we find out a new magnetic semiconductor EuAs, where Eu²⁺ ions with large magnetic moments form distorted triangular lattice. In addition to colossal magnetoresistance, EuAs exhibits large AHE with an anomalous Hall angle of 0.13 at temperatures far above antiferromagnetic ordering. As also demonstrated by model calculations, observed AHE can be explained by the spin cluster scattering in a hopping regime. Our findings shed light on magnetic semiconductors hosting topological spin textures, developing a field targeting diluted carriers strongly coupled to noncoplanar spin structures.

Chirality and Magnetocaloricity in GdFeTeO6 as Compared to GdGaTeO6

GdFeTeO₆ and GdGaTeO₆ have been prepared and their structures refined by the Rietveld method. Both are superstructures of the rosiaite type (space group P3¯1c). Their thermodynamic properties have been investigated by means of magnetization M and specific heat C_p measurements, evidencing the formation of the long-range antiferromagnetic order at T_N = 2.4 K in the former compound and paramagnetic behavior down to 2 K in the latter compound. Large magnetocaloric effect allows considering GdFeTeO₆ for the magnetic refrigeration at liquid hydrogen stage. Density functional theory calculations produce estimations of leading Gd–Gd, Gd–Fe and Fe–Fe interactions suggesting unique chiral 120° magnetic structure of Fe³⁺ (S = 5/2) moments and Gd³⁺ (J = 7/2) moments rotating in opposite directions (clockwise/anticlockwise) within weakly coupled layers of the rosiaite type crystal structure.

First-Principles Study on Electronic, Magnetic, Optical, Mechanical, and Thermodynamic Properties of Semiconducting Gadolinium Phosphide in GGA, GGA+U, mBJ, GGA+SOC and GGA+SOC+U approaches

In the current article, the electronic, magnetic, and optical properties of GdP in the hypothetical zinc blende structure have been discussed by using GGA, GGA+U, mBJ, GGA+SOC, and GGA+SOC+U approaches. The energy vs volume plots in the three magnetic states suggest the ferromagnetic phase to be the stable phase of GdP. The cohesive energy calculated for GdP is negative, suggesting the stability of the compound. The electronic band structure calculations predict the binary GdP to be a direct bandgap conventional semiconductor. The optical properties confirm the semiconducting properties of GdP, and the bandgap formation follows Penn's criteria. The elastic constants also confirm the stability of the compound with ductile nature. The thermodynamic properties including Debye temperature, entropy, and specific heat capacity are studied under varying hydrostatic pressures taking into account the quasi-harmonic Debye model. The doping of Cu in the supercell of GdP results in the compound to exhibit half-metallic ferromagnetic properties. The magnetic moments calculated for Cu_xGd_1-xP (x = 0.25) are integer-valued backing its half-metallic character and fit excellent with the Slauter-Pauling rule Z_t-8. GdP in the zinc blende structure can prove a potential candidate for optoelectronic devices having better reflectivity in the UV region whereas its doped compounds have the potential to exhibit half-metallic properties useful in spintronics.

Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb

The charge and spin of the electrons in solids have been extensively exploited in electronic devices and in the development of spintronics. Another attribute of electrons—their orbital nature—is attracting growing interest for understanding exotic phenomena and in creating the next-generation of quantum devices such as orbital qubits. Here, we report on orbital-flop induced magnetoresistance anisotropy in CeSb. In the low temperature high magnetic-field driven ferromagnetic state, a series of additional minima appear in the angle-dependent magnetoresistance. These minima arise from the anisotropic magnetization originating from orbital-flops and from the enhanced electron scattering from magnetic multidomains formed around the first-order orbital-flop transition. The measured magnetization anisotropy can be accounted for with a phenomenological model involving orbital-flops and a spin-valve-like structure is used to demonstrate the viable utilization of orbital-flop phenomenon. Our results showcase a contribution of orbital behavior in the emergence of intriguing phenomena.

The orbital degree of freedom can be as important as the charge and spin of the electron to the electronic phenomena. Here the authors show additional minimum in the angle-dependent magnetoresistance (MR) for the low temperature high magnetic field driven ferromagnetic state in CeSb which indicates the orbital flop induced MR anisotropy.

Static and Dynamical Properties of heavy actinide Monopnictides of Lutetium

In this work, density functional theory within the framework of generalized gradient approximation has been used to investigate the structural, elastic, mechanical, and phonon properties of lutetium monopnictides in rock-salt crystal structure. The spin orbit coupling and Hubbard-U corrections are included to correctly predict the essential properties of these compounds. The elastic constants, Young's modulus E, Poisson's ratio v, shear modulus G, anisotropy factor A and Pugh's ratio are computed. We found that all lutetium monopnictides are anisotropic and show brittle character. From the wave velocities along [100], [110] and [111] directions, melting temperature of lutetium monopnictides are predicted. Dynamical stability of these monopnictides has been studied by density functional perturbation theory.

High pressure phase transition and elastic properties of covalent heavy rare-earth antimonides

In the present paper, we report an investigation into the high-pressure structural phase transition of rare earth antimonides (DySb and ErSb). A modified interaction potential model (MIPM) (including the covalency effect) has been developed. Phase transition pressures are associated with a sudden collapse in volume, indicating the occurrence of a first order phase transition. At compressed volumes, these compounds are found in the CsCl phase. The phase transition pressures and associated volume collapses obtained from the potential model developed here show a generally better agreement with available experimental data than others available in the literature. The elastic constants and bulk modulus are also reported. Our results are, in general, in good agreement with experimental and theoretical data where available, and provide predictions where data are unavailable.

The physics of solid-state neutron detector materials and geometries

Detection of neutrons, at high total efficiency, with greater resolution in kinetic energy, time and/or real-space position, is fundamental to the advance of subfields within nuclear medicine, high-energy physics, non-proliferation of special nuclear materials, astrophysics, structural biology and chemistry, magnetism and nuclear energy. Clever indirect-conversion geometries, interaction/transport calculations and modern processing methods for silicon and gallium arsenide allow for the realization of moderate- to high-efficiency neutron detectors as a result of low defect concentrations, tuned reaction product ranges, enhanced effective omnidirectional cross sections and reduced electron-hole pair recombination from more physically abrupt and electronically engineered interfaces. Conversely, semiconductors with high neutron cross sections and unique transduction mechanisms capable of achieving very high total efficiency are gaining greater recognition despite the relative immaturity of their growth, lithographic processing and electronic structure understanding. This review focuses on advances and challenges in charged-particle-based device geometries, materials and associated mechanisms for direct and indirect transduction of thermal to fast neutrons within the context of application. Calorimetry- and radioluminescence-based intermediate processes in the solid state are not included.

Magnetic exchange hardening in polycrystalline GdN thin films

We report the observation of intrinsic exchange hardening in polycrystalline GdN thin films grown at room temperature by magnetron sputtering. We find, in addition to the ferromagnetic phase, that a fraction of GdN crystallizes in a structural polymorphic form which orders antiferromagnetically. The relative fraction of these two phases was controlled by varying the relative abundance of reactive species in the sputtering plasma by means of the sputtering power and N(2) partial pressure. An exchange bias of ∼ 30 Oe was observed at 10 K. The exchange coupling between the ferromagnetic and the antiferromagnetic phases resulted in an order of magnitude enhancement in the coercive field in these films.

Pressure induced magnetic, electronic and mechanical properties of SmX (X = Se, Te)

The magnetic, structural, elastic and electronic properties of Sm-chalcogenides in the stable [Formula: see text] and high pressure [Formula: see text] phase have been analyzed using an ab initio pseudo-potential method with a spin-polarized GGA based on exchange-correlation energy optimization, as implemented in SIESTA code. The magnetic phase stability has been determined from the total energy calculations in non-magnetic and magnetic phases, which clearly indicate that at ambient and high pressures, these compounds are ferromagnetically stable. Also, the Sm ion is described in both five and six localized f electrons. Under compression the Sm chalcogenides undergo a first-order transformation from Sm(2+) to a stable valence state (Sm(3+)) with delocalization of the 4f electrons into the 5d states of Sm followed by a structural transition from the B1 to the B2 phase. The structural properties namely, equilibrium lattice constant, bulk modulus, its pressure derivative, transition pressure and volume collapse agree well with the experimental results. We have also computed the electronic structure at different volumes.

Comparison of n-type Gd(2)O(3) and Gd-doped HfO(2)

Gd(2)O(3) and Gd-doped HfO(2) films were deposited on p-type silicon substrates in a reducing atmosphere. Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valence band maximum have been identified using the resonant photoemission of Gd(2)O(3) and Gd-doped HfO(2) films, respectively. In the case of Gd(2)O(3), strong hybridization with the O 2p band is demonstrated, and there is evidence that the Gd 4f weighted band exhibits dispersion in the bulk band structure. The rectifying (diode-like) properties of Gd-doped HfO(2)-silicon and Gd(2)O(3)-silicon heterojunctions are demonstrated.