Ion beam triangulation based on electron detection for studies on the structure of 1 ML Mn on Cu(001)

Surface structure of V_{2}O_{3}(0001) revisited

In a recent paper [A. J. Window et al., Phys. Rev. Lett. 107, 016105 (2011)], it was proposed that V_{2}O_{3}(0001) is terminated by the so-called O_{3} termination, a reconstruction with a terminating distorted hexagonal oxygen layer. We show that the surface is terminated by vanadyl (V═O) groups instead. This conclusion is based on quantitative low-energy electron diffraction combined with scanning tunneling microscopy, fast atom scattering, and density functional theory employing the Heyd-Scuseria-Ernzerhof functional. New insights into the subsurface sensitivity of ion beam triangulation show that results previously interpreted in favor of the O_{3} termination are reconcilable with vanadyl termination as well.

Young-type interference for scattering of fast helium atoms from an oxygen covered Mo(112) surface

In studies on two structures of oxygen adsorbates on Mo(112), we demonstrate the potential of fast atom diffraction to derive the surface unit cell size and its symmetry. Helium atoms with energies of 1-2 keV are scattered from an adsorbate covered Mo(112) surface along low indexed surface directions under grazing angles of incidence. From the observed diffraction patterns, the lateral periodicity of the surface structures is derived. In addition to the periodic lattice, information on the structure within the unit cell can be obtained from double slit type of interference.

Evidence for 2D-network structure of monolayer silica film on Mo(112)

The structure of a monolayer silica film on a Mo(112) surface is investigated by grazing scattering of 25 keV H0 atoms. By detection of the number of projectile induced emitted electrons as function of azimuthal angle of rotation of the target surface, the geometrical structure of atoms forming the topmost layer of the silica film is determined via ion beam triangulation. From our data we find evidence for the arrangement of surface atoms in terms of a two-dimensional Si-O-Si network model.