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Fujioka M, Zagarzusem K, Iwasaki S, Sharma A, Watanabe K, Nakayama R, Momai M, Yamaguchi Y, Shimada H, Nomura K, Mizutani Y, Sumi H, Tanaka M, Jeem M, Hattori M, Saitoh H, Ozaki T, Nagao M, Nagashima K. Hydrogen-Assisted Mg Intercalation into 2H-TaS 2. J Am Chem Soc 2024; 146:34324-34332. [PMID: 39626204 DOI: 10.1021/jacs.4c07294] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2024]
Abstract
Intercalation reactions are highly dependent on the electronic and structural relationships between host and guest materials. It is difficult for divalent ions, such as Mg, to undergo intercalation reactions compared with monovalent cations. However, further development of synthetic techniques for controlling divalent ions is strongly demanded to advance applied chemistry and fundamental physics. In this study, the cointercalation of Mg and H into the transition-metal chalcogenide TaS2 was utilized to obtain bulk polycrystalline MgxHyTaS2. Introduced H can be extracted via postannealing at approximately 400 °C without altering the crystal structure. This study clarified the relationship between superconducting properties and electronic carrier density from the perspectives of calculations and experiments, along with the advantages of using hydride as a multivalent intercalation reaction.
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Affiliation(s)
- Masaya Fujioka
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology, 4-205 Sakurazaka, Moriyama-ku, Nagoya, Aichi 463-8560, Japan
- Research Institute for Electronic Science, Hokkaido University, Kita 20 Nishi 10, Kita-ku, Sapporo, Hokkaido 001-0020, Japan
| | - Khurelbaatar Zagarzusem
- Department of Electronics, School of Information and Communication Technology, Mongolian University of Science and Technology, Ulaanbaatar 14191, Mongolia
| | - Suguru Iwasaki
- Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika, Tokyo 125-8585, Japan
| | - Aman Sharma
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology, 4-205 Sakurazaka, Moriyama-ku, Nagoya, Aichi 463-8560, Japan
| | - Konosuke Watanabe
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology, 4-205 Sakurazaka, Moriyama-ku, Nagoya, Aichi 463-8560, Japan
| | - Rei Nakayama
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology, 4-205 Sakurazaka, Moriyama-ku, Nagoya, Aichi 463-8560, Japan
| | - Mizuki Momai
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology, 4-205 Sakurazaka, Moriyama-ku, Nagoya, Aichi 463-8560, Japan
| | - Yuki Yamaguchi
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology, 4-205 Sakurazaka, Moriyama-ku, Nagoya, Aichi 463-8560, Japan
| | - Hiroyuki Shimada
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology, 4-205 Sakurazaka, Moriyama-ku, Nagoya, Aichi 463-8560, Japan
| | - Katsuhiro Nomura
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology, 4-205 Sakurazaka, Moriyama-ku, Nagoya, Aichi 463-8560, Japan
| | - Yasunobu Mizutani
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology, 4-205 Sakurazaka, Moriyama-ku, Nagoya, Aichi 463-8560, Japan
| | - Hirofumi Sumi
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology, 4-205 Sakurazaka, Moriyama-ku, Nagoya, Aichi 463-8560, Japan
| | - Masashi Tanaka
- Graduate School of Engineering, Kyushu Institute of Technology, 1-1 Sensui-Cho, Tobata, Kitakyushu, Fukuoka 804-8550, Japan
| | - Melbert Jeem
- Faculty of Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo, Hokkaido 060-8628, Japan
| | - Mineyuki Hattori
- Research Institute for Material and Chemical Measurement, National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
| | - Hiroyuki Saitoh
- National Institutes for Quantum Science and Technology, 1-1-1 Kouto, Sayo, Hyogo 679-5148, Japan
| | - Toshinori Ozaki
- School of Engineering, Kwansei Gakuin University, 1 Gakuen, Uegahara, Sanda, Hyogo 669-1330, Japan
| | - Masanori Nagao
- Center for Crystal Science and Technology, University of Yamanashi, Kofu, Yamanashi 400-0021, Japan
| | - Kazuki Nagashima
- Research Institute for Electronic Science, Hokkaido University, Kita 20 Nishi 10, Kita-ku, Sapporo, Hokkaido 001-0020, Japan
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Pereira JM, Tezze D, Martín-García B, Casanova F, Ormaza M, Hueso LE, Gobbi M. Enhanced Superconductivity in 2H-TaS 2 Devices through in Situ Molecular Intercalation. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39042085 DOI: 10.1021/acsami.4c04997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
The intercalation of guest species into the gap of van der Waals materials often leads to the emergence of intriguing phenomena such as superconductivity. While intercalation-induced superconductivity has been reported in several bulk crystals, reaching a zero-resistance state in flakes remains challenging. Here, we show a simple method for enhancing the superconducting transition in tens-of-nanometers thick 2H-TaS2 crystals contacted by gold electrodes through in situ intercalation. Our approach enables measuring the electrical characteristics of the same flake before and after intercalation, permitting us to precisely identify the effect of the guest species on the TaS2 transport properties. We find that the intercalation of amylamine molecules into TaS2 flakes causes a suppression of the charge density wave and an increase in the superconducting transition with an onset temperature above 3 K. Additionally, we show that a fully developed zero-resistance state can be achieved in flakes by engineering the conditions of the chemical intercalation. Our findings pave the way for the integration of chemically tailored intercalation compounds in scalable quantum technologies.
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Affiliation(s)
| | - Daniel Tezze
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Spain
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Maider Ormaza
- Departamento de Polímeros y Materiales Avanzados: Física, Química y Tecnología, UPV-EHU, 20018 San Sebastián, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
- Centro de Física de Materiales (CSIC-UPV-EHU) and Materials Physics Center (MPC), 20018 San Sebastián, Spain
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Zhu XD, Lu JC, Sun YP, Pi L, Qu Z, Ling LS, Yang ZR, Zhang YH. Vortex phase diagram of the layered superconductor Cu0.03TaS2 for H is parallel to c. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2010; 22:505704. [PMID: 21406807 DOI: 10.1088/0953-8984/22/50/505704] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
The magnetization and anisotropic electrical transport properties have been measured in high quality Cu(0.03)TaS(2) single crystals. A pronounced peak effect has been observed, indicating that high quality and homogeneity are vital to the peak effect. A kink has been observed in the magnetic field, H, dependence of the in-plane resistivity ρ(ab) for H is parallel to c, which corresponds to a transition from activated to diffusive behavior of the vortex liquid phase. In the diffusive regime of the vortex liquid phase, the in-plane resistivity ρ(ab) is proportional to H(0.3), which does not follow the Bardeen-Stephen law for free flux flow. Finally, a simplified vortex phase diagram of Cu(0.03)TaS(2) for H is parallel to c is given.
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Affiliation(s)
- X D Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, People's Republic of China.
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