Elastic scattering of 200 keV electrons in elemental solids: experimental observation of atomic-number-dependent oscillatory behavior

Elastic and inelastic mean free paths for scattering of fast electrons in thin-film oxides

Quantitative transmission electron microscopy (TEM) often requires accurate knowledge of sample thickness for determining defect density, structure factors, sample dimensions, electron beam and X-ray photons signal broadening. The most common thickness measurement is by Electron Energy Loss Spectroscopy which can be applied effectively to crystalline and amorphous materials. The drawback is that sample thickness is measured in units of Inelastic Mean Free Path (MFP) which depends on the material, the electron energy and the collection angle of the spectrometer. Furthermore, the Elastic MFP is an essential parameter for selecting optimal sample thickness to reduce dynamical scatterings, such as for short-range-order characterization of amorphous materials. Finally, the Inelastic to Elastic MFP ratio can predict the dominant mechanism for radiation damage due to the electron beam. We implement a fast and precise method for the extraction of inelastic and elastic MFP values in technologically important oxide thin films. The method relies on the crystalline Si substrate for calibration. The Inelastic MFP of Si was measured as a function of collection semi-angle (β) by combining Energy-Filtered TEM thickness maps followed by perpendicular cross-sectioning of the sample by Focused-Ion-Beam. For example, we measured a total Inelastic MFP (β∼157 mrad) in Si of 145 ± 10 nm for 200 keV electrons. The MFP of the thin oxide films is determined by their ratio at their interface with Si or SiO₂. The validity of this method was verified by direct TEM observation of cross-to-cross sectioning of TEM samples. The high precision of this method was enabled mainly by implementing a wedge preparation technique, which provides large sampling areas with uniform thickness. We measured the Elastic and Inelastic Mean Free Paths for 200 keV and 80 keV electrons as a function of collection angle for: SiO₂ (Thermal, CVD), low-κ SiOCH, Al₂O₃, TiO₂, ZnO, Ta₂O₅ and HfO₂. The measured MFP values were compared to calculations based on models of Wenzel, Malis and Iakoubovskii. These models deviate from measurements by up to 30%, especially for 80 keV electrons. Hence, we propose functional relations for the Elastic MFP and Inelastic MFP in oxides with respect to the mass density and effective atomic number, which reduce deviations by a factor of 2-3. In addition, the effects of sample cooling on the measurements and sample stability are examined.

The Accuracy of Cerenkov Photons Simulation in Geant4/Gate Depends on the Parameterization of Primary Electron Propagation

Energetic electrons traveling in a dispersive medium can produce Cerenkov radiation. Cerenkov photons' prompt emission, combined with their predominantly forward emission direction with respect to the parent electron, makes them extremely promising to improve radiation detector timing resolution. Triggering gamma detections based on Cerenkov photons to achieve superior timing resolution is challenging due to the low number of photons produced per interaction. Monte Carlo simulations are fundamental to understanding their behavior and optimizing their pathway to detection. Therefore, accurately modeling the electron propagation and Cerenkov photons emission is crucial for reliable simulation results. In this work, we investigated the physics characteristics of the primary electrons (velocity, energy) and those of all emitted Cerenkov photons (spatial and timing distributions) generated by 511 keV photoelectric interactions in a bismuth germanate crystal using simulations with Geant4/GATE. Geant4 uses a stepwise particle tracking approach, and users can limit the electron velocity change per step. Without limiting it (default Geant4 settings), an electron mean step length of ~250 μm was obtained, providing only macroscopic modeling of electron transport, with all Cerenkov photons emitted in the forward direction with respect to the incident gamma direction. Limiting the electron velocity change per step reduced the electron mean step length (~0.200 μm), leading to a microscopic approach to its transport which more accurately modeled the electron physical properties in BGO at 511 keV. The electron and Cerenkov photons rapidly lost directionality, affecting Cerenkov photons' transport and, ultimately, their detection. Results suggested that a deep understanding of low energy physics is crucial to perform accurate optical Monte Carlo simulations and ultimately use them in TOF PET detectors.

The Evolution and the Advantages of MicroED

MicroED is a method which combines cryo-EM sample preparation and instrumentation, with electron and X-ray crystallography data analysis, and it has been employed to solve many protein crystal structures at high resolution. Initially, the main doubts of this method for structure determination were the dynamic scattering of electrons, which would cause severe inaccuracies in the measured intensities. In this paper, we will review the evolution of MicroED data collection and processing, the major differences of multiple scattering effects in protein crystals and inorganic material, and the advantages of continuous rotation data collection. Additionally, because of the periodic nature of the crystalline sample, radiation doses can be kept significantly lower than those used in single particle data collection. We review the work where this was used to assess the radiation damage of a high-energy electron beam on the protein molecules at much lower dose ranges compared to imaging.

The role of helium ion microscopy in the characterisation of complex three-dimensional nanostructures

This work addresses two major issues relating to Helium Ion Microscopy (HeIM). First we show that HeIM is capable of solving the interpretation difficulties that arise when complex three-dimensional structures are imaged using traditional high lateral resolution techniques which are transmission based, such as scanning transmission electron microscopy (STEM). Secondly we use a nano-composite coating consisting of amorphous carbon embedded in chromium rich matrix to estimate the mean escape depth for amorphous carbon for secondary electrons generated by helium ion impact as a measure of HeIM depth resolution.