A brief update of angle-resolved photoemission spectroscopy on a correlated electron system

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

The unique properties of topological insulators such as Bi₂Se₃ are intriguing for their potential implementation in novel device architectures for low power and defect-tolerant logic and memory devices. Recent improvements in the synthesis of Bi₂Se₃ have positioned researchers to fabricate new devices to probe the limits of these materials. The fabrication of such devices, of course, requires etching of the topological insulator, in addition to other materials including gate oxides and contacts which may impact the topologically protected surface states. In this paper, we study the impact of He⁺ sputtering and inductively coupled plasma Cl₂ and SF₆ reactive etch chemistries on the physical, chemical, and electronic properties of Bi₂Se₃. Chemical analysis by X-ray photoelectron spectroscopy tracks changes in the surface chemistry and Fermi level, showing preferential removal of Se that results in vacancy-induced n-type doping. Chlorine-based chemistry successfully etches Bi₂Se₃ but with residual Se-Se bonding and interstitial Cl species remaining after the etch. The Se vacancies and residuals can be removed with postetch anneals in a Se environment, repairing Bi₂Se₃ nearly to the as-grown condition. Critically, in each of these cases, angle-resolved photoemission spectroscopy (ARPES) reveals that the topologically protected surface states remain even after inducing significant surface disorder and chemical changes, demonstrating that topological insulators are quite promising for defect-tolerant electronics. Changes to the ARPES intensity and momentum broadening of the surface states are discussed. Fluorine-based etching aggressively reacts with the film resulting in a relatively thick insulating film of thermodynamically favored BiF₃ on the surface, prohibiting the use of SF₆-based etching in Bi₂Se₃ processing.

Electron mean-free-path filtering in Dirac material for improved thermoelectric performance

Recent advancements in thermoelectric materials have largely benefited from various approaches, including band engineering and defect optimization, among which the nanostructuring technique presents a promising way to improve the thermoelectric figure of merit (zT) by means of reducing the characteristic length of the nanostructure, which relies on the belief that phonons' mean free paths (MFPs) are typically much longer than electrons'. Pushing the nanostructure sizes down to the length scale dictated by electron MFPs, however, has hitherto been overlooked as it inevitably sacrifices electrical conduction. Here we report through ab initio simulations that Dirac material can overcome this limitation. The monotonically decreasing trend of the electron MFP allows filtering of long-MFP electrons that are detrimental to the Seebeck coefficient, leading to a dramatically enhanced power factor. Using SnTe as a material platform, we uncover this MFP filtering effect as arising from its unique nonparabolic Dirac band dispersion. Room-temperature zT can be enhanced by nearly a factor of 3 if one designs nanostructures with grain sizes of ∼10 nm. Our work broadens the scope of the nanostructuring approach for improving the thermoelectric performance, especially for materials with topologically nontrivial electronic dynamics.

Strong-Field Resonant Dynamics in Semiconductors

We predict that a direct band gap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations. In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. The asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase of the driving pulse. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies.

d-Wave Superconductivity and s-Wave Charge Density Waves: Coexistence between Order Parameters of Different Origin and Symmetry

A review of the theory describing the coexistence between d-wave superconductivity and s-wave charge-density-waves (CDWs) is presented. The CDW gapping is identified with pseudogapping observed in high-Tc oxides. According to the cuprate specificity, the analysis is carried out for the two-dimensional geometry of the Fermi surface (FS). Phase diagrams on the σ0 − α plane—here, σ0 is the ratio between the energy gaps in the parent pure CDW and superconducting states, and the quantity 2α is connected with the degree of dielectric (CDW) FS gapping—were obtained for various possible configurations of the order parameters in the momentum space. Relevant tunnel and photoemission experimental data for high-Tc oxides are compared with theoretical predictions. A brief review of the results obtained earlier for the coexistence between s-wave superconductivity and CDWs is also given.