Quantum confinement and magnetic-field effects on the electron g factor in GaAs-(Ga, Al)As cylindrical quantum dots

Magneto-trions in a GaMnAs/Ga0.6Al0.4As Quantum Dot

Magneto bound exciton and the charged exciton in a GaMn 0.02 As / Ga 0.6 Al 0.4 As quantum dot are reported with the spatial confinement effect. The numerical calculations are carried out with the inclusion of exchange interaction between the carrier and the magnetic impurities. The binding energies of exciton and the trions and the optical transition energy are obtained as a function of dot radius. Numerical computations are followed using exact diagonalization method. The spin polaronic energy of the exciton and the charged excitons are obtained using a mean field theory in the presence of magnetic field strength. The magnetization of Mn ion impurities as a function of dot radius is investigated. The effective g-factor of conduction (valence) band electron (hole) is obtained in the GaMnAs quantum dot. The magnetic field induced size dependence of effective Landé g-factor is computed. The result shows that (i) the geometrical dependence on sp-d exchange interaction in the GaMn 0.02 As / Ga 0.6 Al 0.4 As quantum dot has great influence with the geometrical confinement, (ii) the monotonic behavior of effective g-factor with the reduction of dot radius is observed, (iii) the Landé factor is more sensitive if the geometrical confinement effect is included and (iv) the value of effective g-factor increases when the spatial confinement is enhanced for all the dot radii. Our results show that the effective Landé g-factor can be manipulated negative to positive values in the GaMn 0.02 As / Ga 0.4 Al 0.6 As quantum dot.

Coupling-barrier and non-parabolicity effects on the conduction electron cyclotron effective mass and Landé [Formula: see text] factor in GaAs double quantum wells

We have performed a theoretical study of the effects of the non-parabolicity and coupling barrier in between GaAs quantum wells on the conduction electron cyclotron effective mass and Landé [Formula: see text] factor under the action of a growth-direction applied magnetic field. Numerical calculations are performed within the effective mass approximation and taking into account the non-parabolicity effects for the conduction-band electrons, by means of the Ogg-McCombe effective Hamiltonian. The system consists of two GaAs quantum wells connected by a Ga(1 - x)Al(x)As barrier and surrounded by Ga(1 - y)Al(y)As material. We have found that both the [Formula: see text] factor and the cyclotron effective mass are sensitive to the coupling strength, that is the height and width of the barrier in between the GaAs quantum wells. This behavior is similar for every Landé [Formula: see text] factor and the cyclotron effective mass calculated for different Landau levels. It is noticeable that the splitting between the [Formula: see text] and [Formula: see text] cyclotron effective mass increases with the central barrier width and the growth-direction applied magnetic field. As in a single quantum well, we found that the electron Landé [Formula: see text] factor increases with the growth-direction applied magnetic field, comparing quite well with the experimental reports, and that the magnetic field plays an important role in decoupling the quantum wells of the system. Additionally, we have studied the electron cyclotron effective mass and Landé g factor as functions of the Landau levels, depending on the non-parabolicity. From this result one can infer that their population must be taken into account for a complete study of the band parameters as has been proposed in previous works. The present theoretical results are in very good agreement with previous experimental reports in the limiting geometry of a single quantum well.