1
|
Oh H, Yi GC. Synthesis of Atomically Thin h-BN Layers Using BCl 3 and NH 3 by Sequential-Pulsed Chemical Vapor Deposition on Cu Foil. NANOMATERIALS 2021; 12:nano12010080. [PMID: 35010030 PMCID: PMC8746830 DOI: 10.3390/nano12010080] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/06/2021] [Revised: 12/13/2021] [Accepted: 12/27/2021] [Indexed: 11/25/2022]
Abstract
The chemical vapor deposition of hexagonal boron nitride layers from BCl3 and NH3 is highly beneficial for scalable synthesis with high controllability, yet multiple challenges such as corrosive reaction or by-product formation have hindered its successful demonstration. Here, we report the synthesis of polycrystalline hexagonal boron nitride (h-BN) layers on copper foil using BCl3 and NH3. The sequential pulse injection of precursors leads to the formation of atomically thin h-BN layers with a polycrystalline structure. The relationship between growth temperature and crystallinity of the h-BN film is investigated using transmission electron microscopy and Raman spectroscopy. Investigation on the initial growth mode achieved by the suppression of precursor supply revealed the formation of triangular domains and existence of preferred crystal orientations. The possible growth mechanism of h-BN in this sequential-pulsed CVD is discussed.
Collapse
Affiliation(s)
- Hongseok Oh
- Department of Physics and Integrative Institute of Basic Science, Soongsil University, Seoul 06978, Korea;
| | - Gyu-Chul Yi
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
- Correspondence:
| |
Collapse
|
2
|
Mehler A, Néel N, Voloshina E, Dedkov Y, Kröger J. Second Floor of Flatland: Epitaxial Growth of Graphene on Hexagonal Boron Nitride. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102747. [PMID: 34310038 DOI: 10.1002/smll.202102747] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2021] [Revised: 06/17/2021] [Indexed: 06/13/2023]
Abstract
In the studies presented here, the subsequent growth of graphene on hexagonal boron nitride (h-BN) is achieved by the thermal decomposition of molecular precursors and the catalytic assistance of metal substrates. The epitaxial growth of h-BN on Pt(111) is followed by the deposition of a temporary Pt film that acts as a catalyst for the fabrication of the graphene sheet. After intercalation of the intermediate Pt film underneath the boron-nitride mesh, graphene resides on top of h-BN. Scanning tunneling microscopy and density functional calculations reveal that the moiré pattern of the van-der-Waals-coupled double layer is due to the interface of h-BN and Pt(111). While on Pt(111) the graphene honeycomb unit cells uniformly appear as depressions using a clean metal tip for imaging, on h-BN they are arranged in a honeycomb lattice where six protruding unit cells enframe a topographically dark cell. This superstructure is most clearly observed at small probe-surface distances. Spatially resolved inelastic electron tunneling spectroscopy enables the detection of a previously predicted acoustic hybrid phonon of the stacked materials. Its' spectroscopic signature is visible in surface regions where the single graphene sheet on Pt(111) transitions into the top layer of the stacking.
Collapse
Affiliation(s)
- Alexander Mehler
- Institut für Physik, Technische Universität Ilmenau, D-98693, Ilmenau, Germany
| | - Nicolas Néel
- Institut für Physik, Technische Universität Ilmenau, D-98693, Ilmenau, Germany
| | - Elena Voloshina
- Physics Department, Shanghai University, Shanghai, 200444, P. R. China
- Institut für Chemie und Biochemie, Freie Universität Berlin, D-14195, Berlin, Germany
| | - Yuriy Dedkov
- Physics Department, Shanghai University, Shanghai, 200444, P. R. China
- Institut für Chemie und Biochemie, Freie Universität Berlin, D-14195, Berlin, Germany
| | - Jörg Kröger
- Institut für Physik, Technische Universität Ilmenau, D-98693, Ilmenau, Germany
| |
Collapse
|
3
|
Huang M, Deng B, Dong F, Zhang L, Zhang Z, Chen P. Substrate Engineering for CVD Growth of Single Crystal Graphene. SMALL METHODS 2021; 5:e2001213. [PMID: 34928093 DOI: 10.1002/smtd.202001213] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2020] [Revised: 01/13/2021] [Indexed: 06/14/2023]
Abstract
Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next-generation high-performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large-scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted by the engineering of large-size single-crystal substrates for the epitaxial CVD growth of large-area and high-quality SCG films. In this article, a comprehensive and comparative review is provided on the selection and preparation of various single-crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed.
Collapse
Affiliation(s)
- Ming Huang
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| | - Bangwei Deng
- Research Center for Environmental Science & Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Fan Dong
- Research Center for Environmental Science & Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Lili Zhang
- Institute of Chemical and Engineering Sciences, A*STAR, 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
| | - Zheye Zhang
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| | - Peng Chen
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| |
Collapse
|
4
|
Romanova M, Vlček V. Decomposition and embedding in the stochastic GW self-energy. J Chem Phys 2020; 153:134103. [DOI: 10.1063/5.0020430] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- Mariya Romanova
- Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106-9510, USA
| | - Vojtěch Vlček
- Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106-9510, USA
| |
Collapse
|
5
|
Weber M, Koonkaew B, Balme S, Utke I, Picaud F, Iatsunskyi I, Coy E, Miele P, Bechelany M. Boron Nitride Nanoporous Membranes with High Surface Charge by Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2017; 9:16669-16678. [PMID: 28463495 DOI: 10.1021/acsami.7b02883] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
In this work, we report the design and the fine-tuning of boron nitride single nanopore and nanoporous membranes by atomic layer deposition (ALD). First, we developed an ALD process based on the use of BBr3 and NH3 as precursors in order to synthesize BN thin films. The deposited films were characterized in terms of thickness, composition, and microstructure. Next, we used the newly developed process to grow BN films on anodic aluminum oxide nanoporous templates, demonstrating the conformality benefit of BN prepared by ALD, and its scalability for the manufacturing of membranes. For the first time, the ALD process was then used to tune the diameter of fabricated single transmembrane nanopores by adjusting the BN thickness and to enable studies of the fundamental aspects of ionic transport on a single nanopore. At pH = 7, we estimated a surface charge density of 0.16 C·m-2 without slip and 0.07 C·m-2 considering a reasonable slip length of 3 nm. Molecular dynamics simulations performed with experimental conditions confirmed the conductivities and the sign of surface charges measured. The high ion transport results obtained and the ability to fine-tune nanoporous membranes by such a scalable method pave the way toward applications such as ionic separation, energy harvesting, and ultrafiltration devices.
Collapse
Affiliation(s)
- Matthieu Weber
- Institut Européen des Membranes, IEM-UMR 5635 ENSCM, UM, CNRS, Université de Montpellier , Place Eugène Bataillon, 34095 Montpellier Cedex 5, France
| | - Boonprakrong Koonkaew
- Institut Européen des Membranes, IEM-UMR 5635 ENSCM, UM, CNRS, Université de Montpellier , Place Eugène Bataillon, 34095 Montpellier Cedex 5, France
| | - Sebastien Balme
- Institut Européen des Membranes, IEM-UMR 5635 ENSCM, UM, CNRS, Université de Montpellier , Place Eugène Bataillon, 34095 Montpellier Cedex 5, France
| | - Ivo Utke
- EMPA , Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, CH-3602 Thun, Switzerland
| | - Fabien Picaud
- Laboratoire de Nanomédecine, Imagerie et Thérapeutique, EA4662, Université Bourgogne-Franche-Comté, Centre Hospitalier Universitaire de Besançon , 16 route de Gray, 25030 Besançon, France
| | - Igor Iatsunskyi
- NanoBioMedical Centre, Adam Mickiewicz University in Poznan , 61-614, Umultowska str. 85, Poznan, Poland
| | - Emerson Coy
- NanoBioMedical Centre, Adam Mickiewicz University in Poznan , 61-614, Umultowska str. 85, Poznan, Poland
| | - Philippe Miele
- Institut Européen des Membranes, IEM-UMR 5635 ENSCM, UM, CNRS, Université de Montpellier , Place Eugène Bataillon, 34095 Montpellier Cedex 5, France
| | - Mikhael Bechelany
- Institut Européen des Membranes, IEM-UMR 5635 ENSCM, UM, CNRS, Université de Montpellier , Place Eugène Bataillon, 34095 Montpellier Cedex 5, France
| |
Collapse
|
6
|
Driver MS, Beatty JD, Olanipekun O, Reid K, Rath A, Voyles PM, Kelber JA. Atomic Layer Epitaxy of h-BN(0001) Multilayers on Co(0001) and Molecular Beam Epitaxy Growth of Graphene on h-BN(0001)/Co(0001). LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2016; 32:2601-2607. [PMID: 26940024 DOI: 10.1021/acs.langmuir.5b03653] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The direct growth of hexagonal boron nitride (h-BN) by industrially scalable methods is of broad interest for spintronic and nanoelectronic device applications. Such applications often require atomically precise control of film thickness and azimuthal registry between layers and substrate. We report the formation, by atomic layer epitaxy (ALE), of multilayer h-BN(0001) films (up to 7 monolayers) on Co(0001). The ALE process employs BCl3/NH3 cycles at 600 K substrate temperature. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) data show that this process yields an increase in h-BN average film thickness linearly proportional to the number of BCl3/NH3 cycles, with BN layers in azimuthal registry with each other and with the Co(0001) substrate. LEED diffraction spot profile data indicate an average BN domain size of at least 1900 Å. Optical microscopy data indicate the presence of some domains as large as ∼20 μm. Transmission electron microscopy (TEM) and ambient exposure studies demonstrate macroscopic and microscopic continuity of the h-BN film, with the h-BN film highly conformal to the Co substrate. Photoemission data show that the h-BN(0001) film is p-type, with band bending near the Co/h-BN interface. Growth of graphene by molecular beam epitaxy (MBE) is observed on the surface of multilayer h-BN(0001) at temperatures of 800 K. LEED data indicate azimuthal graphene alignment with the h-BN and Co(0001) lattices, with domain size similar to BN. The evidence of multilayer BN and graphene azimuthal alignment with the lattice of the Co(0001) substrate demonstrates that this procedure is suitable for scalable production of heterojunctions for spintronic applications.
Collapse
Affiliation(s)
- M Sky Driver
- Department of Chemistry, University of North Texas , Denton, Texas 76203, United States
| | - John D Beatty
- Department of Chemistry, University of North Texas , Denton, Texas 76203, United States
| | - Opeyemi Olanipekun
- Department of Chemistry, University of North Texas , Denton, Texas 76203, United States
| | - Kimberly Reid
- Department of Chemistry, University of North Texas , Denton, Texas 76203, United States
| | - Ashutosh Rath
- Department of Materials Science and Engineering, University of Wisconsin , Madison, Wisconsin 53706, United States
| | - Paul M Voyles
- Department of Materials Science and Engineering, University of Wisconsin , Madison, Wisconsin 53706, United States
| | - Jeffry A Kelber
- Department of Chemistry, University of North Texas , Denton, Texas 76203, United States
| |
Collapse
|
7
|
In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy. Sci Rep 2015; 5:14760. [PMID: 26442629 PMCID: PMC4595826 DOI: 10.1038/srep14760] [Citation(s) in RCA: 68] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2015] [Accepted: 09/04/2015] [Indexed: 11/16/2022] Open
Abstract
Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°.
Collapse
|
8
|
Zhou M, Pasquale FL, Dowben PA, Boosalis A, Schubert M, Darakchieva V, Yakimova R, Kong L, Kelber JA. Direct graphene growth on Co3O4(111) by molecular beam epitaxy. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2012; 24:072201. [PMID: 22223630 DOI: 10.1088/0953-8984/24/7/072201] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Direct growth of graphene on Co(3)O(4)(111) at 1000 K was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp(2) carbon lineshape, at average carbon coverages from 0.4 to 3 ML. Low energy electron diffraction (LEED) indicates (111) ordering of the sp(2) carbon film with a lattice constant of 2.5(±0.1) Å characteristic of graphene. Sixfold symmetry of the graphene diffraction spots is observed at 0.4, 1 and 3 ML. The LEED data also indicate an average domain size of ~1800 Å, and show an incommensurate interface with the Co(3)O(4)(111) substrate, where the latter exhibits a lattice constant of 2.8(±0.1) Å. Core level photoemission shows a characteristically asymmetric C(1s) feature, with the expected π to π* satellite feature, but with a binding energy for the 3 ML film of 284.9(±0.1) eV, indicative of substantial graphene-to-oxide charge transfer. Spectroscopic ellipsometry data demonstrate broad similarity with graphene samples physically transferred to SiO(2) or grown on SiC substrates, but with the π to π* absorption blue-shifted, consistent with charge transfer to the substrate. The ability to grow graphene directly on magnetically and electrically polarizable substrates opens new opportunities for industrial scale development of charge- and spin-based devices.
Collapse
Affiliation(s)
- Mi Zhou
- Department of Chemistry, University of North Texas, Denton, TX 76203-5017, USA
| | | | | | | | | | | | | | | | | |
Collapse
|
9
|
Wang J, Xu Y, Chen H, Zhang B. Ultraviolet dielectric hyperlens with layered graphene and boron nitride. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c2jm32715e] [Citation(s) in RCA: 27] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
|
10
|
Lin T, Wang Y, Bi H, Wan D, Huang F, Xie X, Jiang M. Hydrogen flame synthesis of few-layer graphene from a solid carbon source on hexagonal boron nitride. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c2jm16449c] [Citation(s) in RCA: 27] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
|
11
|
Son M, Lim H, Hong M, Choi HC. Direct growth of graphene pad on exfoliated hexagonal boron nitride surface. NANOSCALE 2011; 3:3089-3093. [PMID: 21766127 DOI: 10.1039/c1nr10504c] [Citation(s) in RCA: 28] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
A direct and metal layer-free growth of flat graphene pads on exfoliated hexagonal boron nitride substrate (h-BN) are demonstrated by atmospheric chemical vapour deposition (CVD) process. Round shape with high flatness graphene pads are grown in high yield (∼95%) with a pad thickness of ∼0.5 nm and homogenous diameter.
Collapse
Affiliation(s)
- Minhyeok Son
- Department of Chemistry and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam-Gu, Pohang, 790-784, Korea
| | | | | | | |
Collapse
|
12
|
Huang X, Yin Z, Wu S, Qi X, He Q, Zhang Q, Yan Q, Boey F, Zhang H. Graphene-based materials: synthesis, characterization, properties, and applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2011; 7:1876-902. [PMID: 21630440 DOI: 10.1002/smll.201002009] [Citation(s) in RCA: 1148] [Impact Index Per Article: 88.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2010] [Indexed: 05/21/2023]
Abstract
Graphene, a two-dimensional, single-layer sheet of sp(2) hybridized carbon atoms, has attracted tremendous attention and research interest, owing to its exceptional physical properties, such as high electronic conductivity, good thermal stability, and excellent mechanical strength. Other forms of graphene-related materials, including graphene oxide, reduced graphene oxide, and exfoliated graphite, have been reliably produced in large scale. The promising properties together with the ease of processibility and functionalization make graphene-based materials ideal candidates for incorporation into a variety of functional materials. Importantly, graphene and its derivatives have been explored in a wide range of applications, such as electronic and photonic devices, clean energy, and sensors. In this review, after a general introduction to graphene and its derivatives, the synthesis, characterization, properties, and applications of graphene-based materials are discussed.
Collapse
Affiliation(s)
- Xiao Huang
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | | | | | | | | | | | | | | | | |
Collapse
|
13
|
Gaddam S, Bjelkevig C, Ge S, Fukutani K, Dowben PA, Kelber JA. Direct graphene growth on MgO: origin of the band gap. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2011; 23:072204. [PMID: 21411874 DOI: 10.1088/0953-8984/23/7/072204] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
A 2.5 monolayer (ML) thick graphene film grown by chemical vapor deposition of thermally dissociated C(2)H(4) on MgO(111), displays a significant band gap. The apparent six-fold low energy electron diffraction (LEED) pattern actually consists of two three-fold patterns with different 'A' and 'B' site diffraction intensities. Similar effects are observed for the LEED patterns of a 1 ML carbon film derived from annealing adventitious carbon on MgO(111), and for a 1.5 ML thick graphene film grown by sputter deposition on the 1 ML film. The LEED data indicate different electron densities at the A and B sites of the graphene lattice, suggesting that the observed band gap results from lifting the graphene HOMO/LUMO degeneracy at the Dirac point. The data also indicate that disparities in A site/B site LEED intensities decrease with increasing carbon overlayer thickness, suggesting that the graphene band gap size decreases with increasing number of graphene layers on MgO(111).
Collapse
Affiliation(s)
- Sneha Gaddam
- Department of Chemistry and Center for Electronic Materials Processing and Integration, University of North Texas, Denton, TX 76203-5017, USA
| | | | | | | | | | | |
Collapse
|