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Ulibarri AC, Lew CTK, Lim SQ, McCallum JC, Johnson BC, Harmand JC, Peretti J, Rowe ACH. Deep-Level Structure of the Spin-Active Recombination Center in Dilute Nitrides. PHYSICAL REVIEW LETTERS 2024; 132:186402. [PMID: 38759200 DOI: 10.1103/physrevlett.132.186402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 04/15/2024] [Indexed: 05/19/2024]
Abstract
A gallium interstitial defect is thought to be responsible for the spectacular spin-dependent recombination in GaAs_{1-x}N_{x} dilute nitrides. Current understanding associates this defect with at least two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photoinduced current transient spectroscopy, the in-gap electronic structure of a x=0.021 alloy is revealed. The (+/0) state lies ≈0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but two other in-gap states. The observations are consistent with a (++/+) state ≈0.19 eV above the valence band edge, and a (+++/++) state ≈25 meV above the valence band edge.
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Affiliation(s)
- A C Ulibarri
- Laboratoire de physique de la matière condensée, CNRS, Ecole Polytechnique, IP Paris, 91128 Palaiseau, France
| | - C T K Lew
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - S Q Lim
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - J C McCallum
- School of Physics, University of Melbourne, Parkville, VIC, Australia
| | - B C Johnson
- School of Science, RMIT University, Melbourne 3001, Australia
| | - J C Harmand
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, 91120 Palaiseau, France
| | - J Peretti
- Laboratoire de physique de la matière condensée, CNRS, Ecole Polytechnique, IP Paris, 91128 Palaiseau, France
| | - A C H Rowe
- Laboratoire de physique de la matière condensée, CNRS, Ecole Polytechnique, IP Paris, 91128 Palaiseau, France
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Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities. PHOTONICS 2018. [DOI: 10.3390/photonics5020010] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor. Nat Commun 2013; 4:1751. [PMID: 23612292 DOI: 10.1038/ncomms2776] [Citation(s) in RCA: 31] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/15/2012] [Accepted: 03/21/2013] [Indexed: 11/08/2022] Open
Abstract
Nuclear spin hyperpolarization is essential to future solid-state quantum computation using nuclear spin qubits and in highly sensitive magnetic resonance imaging. Though efficient dynamic nuclear polarization in semiconductors has been demonstrated at low temperatures for decades, its realization at room temperature is largely lacking. Here we demonstrate that a combined effect of efficient spin-dependent recombination and hyperfine coupling can facilitate strong dynamic nuclear polarization of a defect atom in a semiconductor at room temperature. We provide direct evidence that a sizeable nuclear field (~150 Gauss) and nuclear spin polarization (~15%) sensed by conduction electrons in GaNAs originates from dynamic nuclear polarization of a Ga interstitial defect. We further show that the dynamic nuclear polarization process is remarkably fast and is completed in <5 μs at room temperature. The proposed new concept could pave a way to overcome a major obstacle in achieving strong dynamic nuclear polarization at room temperature, desirable for practical device applications.
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