Low temperature transport properties and heat capacity of single-crystal Na8Si46

Seeded Growth of Type-II Na24Si136 Clathrate Single Crystals

Type-II Na24Si136 clathrate octahedral single crystals surrounded by {111} facets were grown by evaporating Na from a molten mixture of Na4Si4 and Na9Sn4 at 823 K for 12 h. One of the obtained single crystals was used as a seed for the following single crystal growth of the type-II clathrate using the same method. The single crystal grown on the seed maintained the octahedral shape. The weight of the crystal grown with the seed was increased from 0.6 to 30.4 mg by repeating the seeded growth and was proportional to the surface area of the seed crystal.

In-Cage Interactions in the Clathrate Superconductor Sr8 Si46

The clathrate I superconductor Sr₈Si₄₆ is obtained under high‐pressure high‐temperature conditions, at 5 GPa and temperatures in the range of 1273 to 1373 K. At ambient pressure, the compound decomposes upon heating at T=796(5) K into Si and SrSi₂. The crystal structure of the clathrate is isotypic to that of Na₈Si₄₆. Chemical bonding analysis reveals conventional covalent bonding within the silicon network as well as additional multi‐atomic interactions between Sr and Si within the framework cages. Physical measurements indicate a bulk BCS type II superconducting state below T_c=3.8(3) K.

Single crystal growth and structure analysis of type-I (Na/Sr)-(Ga/Si) quaternary clathrates

Single crystals of (Na/Sr)-(Ga/Si) quaternary type-I clathrates, Na8-y Sr y Ga x Si46-x , were synthesized by evaporating Na from a mixture of Na-Sr-Ga-Si-Sn in a 6 : 0.5 : 1 : 2 : 1 molar ratio at 773 K for 12 h in an Ar atmosphere. Electron-probe microanalysis and single-crystal X-ray diffraction revealed that three crystals from the same product were Na8-y Sr y Ga x Si46-x with x and y values of 7.6, 2.96; 8.4, 3.80; and 9.1, 4.08. It was also shown that increasing the Sr and Ga contents increased the electrical resistivity of the crystal from 0.34 to 1.05 mΩ cm at 300 K.

Transport properties of topologically non-trivial bismuth tellurobromides BinTeBr

Temperature-dependent transport properties of the recently discovered layered bismuth-rich tellurobromides BinTeBr (n = 2, 3) are investigated for the first time. Dense homogeneous polycrystalline specimens prepared for different electrical and thermal measurements were synthesized by a ball milling-based process. While the calculated electronic structure classifies Bi2TeBr as a semimetal with a small electron pocket, its transport properties demonstrate a semiconductorlike behavior. Additional bismuth bilayers in the Bi3TeBr crystal structure strengthens the interlayer chemical bonding thus leading to metallic conduction. The thermal conductivity of the semiconducting compositions is low, and the electrical properties are sensitive to doping with a factor of four reduction in resistivity observed at room temperature for only 3% Pb doping. Investigation of the thermoelectric properties suggests that optimization for thermoelectrics may depend on particular elemental substitution. The results presented are intended to expand on the research into tellurohalides in order to further advance the fundamental investigation of these materials, as well as investigate their potential for thermoelectric applications.

Zintl Ions within Framework Channels: The Complex Structure and Low-Temperature Transport Properties of Na4Ge13

Single crystals of a complex Zintl compound with the composition Na₄Ge₁₃ were synthesized for the first time using a high-pressure/high-temperature approach. Single-crystal diffraction of synchrotron radiation revealed a hexagonal crystal structure with P6/m space group symmetry that is composed of a three-dimensional sp³ Ge framework punctuated by small and large channels along the crystallographic c axis. Na atoms are inside hexagonal prism-based Ge cages along the small channels, while the larger channels are occupied by layers of disordered sixfold Na rings, which are in turn filled by disordered [Ge₄]^4- tetrahedra. This compound is the same as "Na_1-xGe_3+z" reported previously, but the availability of single crystals allowed for more complete structural determination with a formula unit best described as Na₄Ge₁₂(Ge₄)_0.25. The compound is the first known example of a guest-host structure where discrete Zintl polyanions are confined inside the channels of a three-dimensional covalent framework. These features give rise to temperature-dependent disorder, as confirmed by first-principles calculations and physical properties measurements. The availability of single-crystal specimens allowed for measurement of the intrinsic low-temperature transport properties of this material and revealed its semiconductor behavior, which was corroborated by theoretical calculations.

Binary Alkali-Metal Silicon Clathrates by Spark Plasma Sintering: Preparation and Characterization

The binary intermetallic clathrates K_8-xSi₄₆ (x = 0.4; 1.2), Rb_6.2Si₄₆, Rb_11.5Si₁₃₆ and Cs_7.8Si₁₃₆ were prepared from M₄Si₄ (M = K, Rb, Cs) precursors by spark-plasma route (SPS) and structurally characterized by Rietveld refinement of PXRD data. The clathrate-II phase Rb_11.5Si₁₃₆ was synthesized for the first time. Partial crystallographic site occupancy of the alkali metals, particularly for the smaller Si₂₀ dodecahedra, was found in all compounds. SPS preparation of Na₂₄Si₁₃₆ with different SPS current polarities and tooling were performed in order to investigate the role of the electric field on clathrate formation. The electrical and thermal transport properties of K_7.6Si₄₆ and K_6.8Si₄₆ in the temperature range 4–700 K were investigated. Our findings demonstrate that SPS is a novel tool for the synthesis of intermetallic clathrate phases that are not easily accessible by conventional synthesis techniques.

Influence of guest loading on thermal properties of NaxSi136 clathrates

Thermal properties of a series of type II clathrates of the formula NaxSi136 with 0 < x < 24 and Na guests occupying the Si cages have been investigated over the temperature range from 2 to 300 K. Heat capacity and thermal conductivity results show that the structure is remarkably responsive to the loading of Na guests. The response is phononic: the host lattice expands in a non-monotonic way, and first stiffens, then relaxes at low loading into the larger Si28 cages (x < 9), then stiffens again as the Na concentration increases further. The response is also electronic, through changes in electronic properties as additional Na is loaded into the smaller Si20 cages at high loading (x > 9). In total, the influence of the guest loading illustrates the complexities of structure-property relations in a guest-host system.