Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

Tuning of p-n-p-Type Conduction in AgCuS through Cation Vacancy: Thermopower and Positron Annihilation Spectroscopy Investigations

Understanding the complex phenomenon behind the structural transformations is a key requisite to developing important solid-state materials with better efficacy such as transistors, resistive switches, thermoelectrics, etc. AgCuS, a superionic semiconductor, exhibits temperature-dependent p-n-p-type conduction switching and a colossal jump in thermopower during an orthorhombic to hexagonal superionic transition. Tuning of p-n-p-type conduction switching in superionic compounds is fundamentally important to realize the correlation between electronic/phonon dispersion modulation with changes in the crystal structure and bonding, which might contribute to the design of better thermoelectric materials. Herein, we have created extrinsic Ag/Cu nonstoichiometry in AgCuS, which resulted in the vanishing of p-n-p-type conduction switching and improved its thermoelectric properties. We have performed the selective removal of cations and measured their temperature-dependent thermopower and Hall coefficient, which demonstrates only p-type conduction in the Ag_{1- x}CuS and AgCu_{1- x}S samples. The removal of Cu is much more efficient in arresting conduction switching, whereas in the case of Ag vacancy, p-n-p-type conduction switching vanishes at higher vacant concentrations. Positron annihilation spectroscopy measurements have been done to shed further light on the mechanisms behind this structural transition-dependent conduction switching. Cation (Ag⁺/Cu⁺) nonstoichiometry in AgCuS significantly increases the vacancy concentration, hence, the p-type carriers, which is confirmed by positron annihilation spectroscopy and Hall measurement. The Ag_{1- x}CuS and AgCu_{1- x}S samples exhibit ultralow thermal conductivity (∼0.3-0.5 W/m·K) in the 290-623 K temperature range because of the low-energy cationic sublattice vibration that arises as a result of the movement of loosely bound Ag/Cu within the stiff S sublattice.

Positron Annihilation Spectroscopic Investigation on the Origin of Temperature-Dependent Electrical Response in Methylammonium Lead Iodide Perovskite

Organic-inorganic hybrid perovskite has appeared as one of the leading materials for realizing solution-based high-performing optoelectronic devices. The charge transport properties in this class of material are quite intriguing and still need to be carefully investigated. The temperature-dependent electrical property of methylammonium lead iodide (CH₃NH₃PbI₃) has been investigated by employing positron annihilation spectroscopy (PAS), which unambiguously reveals the gradual formation of open volume defects with the enhancement in temperature. The high-temperature ionic conductivity is due to the generation of both cationic (CH₃NH₃⁺) and anionic (I^-) vacancies, possibly because of the elimination of methylammonium iodide (CH₃NH₃I) as identified from the coincidence Doppler broadening (CDB) of the positron annihilation spectroscopy. Further, the evolution of temperature-dependent defect density and corresponding electrical responses has been correlated with the structural phase transitions of CH₃NH₃PbI₃. This is the first ever report of temperature-dependent PAS measurement on hybrid lead halide perovskites to understand the nature and the origin of its electrical characteristics arising due to the variation in temperature.

Defects in 6 MeV H+ irradiated hydrothermal ZnO single crystal

The effect of 6 MeV H(+) irradiation on hydrothermally grown ZnO single crystal has been investigated using high resolution x-ray diffraction (HRXRD) and optical absorption (ultraviolet-visible) spectroscopy. The increase of the diffuse scattering in the reciprocal space maps measured using HRXRD indicates an increase of the point defect density upon irradiation. Within the penetration depth of x-rays of several micrometres, the defect density increased with increasing distance from the sample surface. On the other hand, the near band gap optical absorption became sharper for the irradiated crystal. This reflects enhanced band to band absorption and reduced sub-band gap absorption due to defects. Temperature dependent photoluminescence spectra of the pristine sample show negative thermal quenching (NTQ) of the luminescence which is due to the presence of two or more donor related defects. Upon irradiation, a single dominant donor bound transition can be found without any temperature induced NTQ. Enhancement of the band edge luminescence and reduction of the defect related luminescence is observed at 10 K. Such changes have been discussed in the light of the hydrogen present in the as-grown state of hydrothermal ZnO.

Photoluminescence and positron annihilation spectroscopic investigation on a H(+) irradiated ZnO single crystal

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10(17) cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.