Conductivity in transparent oxide semiconductors

Looking Outside the Square: The Growth, Structure, and Resilient Two-Dimensional Surface Electron Gas of Square SnO2 Nanotubes

Nanotechnology has delivered an amazing range of new materials such as nanowires, tubes, ribbons, belts, cages, flowers, and sheets. However, these are usually circular, cylindrical, or hexagonal in nature, while nanostructures with square geometries are comparatively rare. Here, a highly scalable method is reported for producing vertically aligned Sb-doped SnO₂ nanotubes with perfectly-square geometries on Au nanoparticle covered m-plane sapphire using mist chemical vapor deposition. Their inclination can be varied using r- and a-plane sapphire, while unaligned square nanotubes of the same high structural quality can be grown on silicon and quartz. X-ray diffraction measurements and transmission electron microscopy show that they adopt the rutile structure growing in the [001] direction with (110) sidewalls, while synchrotron X-ray photoelectron spectroscopy reveals the presence of an unusually strong and thermally resilient 2D surface electron gas. This is created by donor-like states produced by the hydroxylation of the surface and is sustained at temperatures above 400 °C by the formation of in-plane oxygen vacancies. This persistent high surface electron density is expected to prove useful in gas sensing and catalytic applications of these remarkable structures. To illustrate their device potential, square SnO₂ nanotube Schottky diodes and field effect transistors with excellent performance characteristics are fabricated.

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and high-performing thin film transistor (TFT) devices in the context of fundamental understanding is presented. In particular, an in depth overview is first provided on current understanding of the electronic structures, defect and doping chemistry, optical and transport properties of oxide semiconductors, which provide essential guiding principles for new material design and device optimization. With these principles, recent advances in design of p-type oxide semiconductors, new approaches for achieving cost-effective transparent (flexible) electrodes, and the creation of high mobility 2D electron gas (2DEG) at oxide surfaces and interfaces with a wealth of fascinating physical properties of great potential for novel device design are then reviewed. Finally, recent progress and perspective of oxide TFT based on new oxide semiconductors, 2DEG, and low-temperature solution processed oxide semiconductor for flexible electronics will be reviewed.

Chemistry of Oxygen Ionosorption on SnO2 Surfaces

Ionosorbed oxygen is the key player in reactions on metal-oxide surfaces. This is particularly evident for chemiresistive gas sensors, which operate by modulating the conductivity of active materials through the formation/removal of surface O-related acceptors. Strikingly though, the exact type of species behind the sensing response remains obscure even for the most common material systems. The paradigm for ab initio modeling to date has been centered around charge-neutral surface species, ignoring the fact that molecular adsorbates are required to ionize to induce the sensing response. Herein, we resolve this inconsistency by carrying out a careful analysis of all charged O-related species on three naturally occurring surfaces of SnO₂. We reveal that two types of surface acceptors can form spontaneously upon the adsorption of atmospheric oxygen: (i) superoxide O₂^- on the (110) and the (101) surfaces and (ii) doubly ionized O^2- on the (100) facet, with the previous experimental evidence pointing to the latter as the source of sensing response. This species has a unique geometry involving a large displacement of surface Sn, forcing it to attain the coordination resembling that of Sn²⁺ in SnO, which seems necessary to stabilize O^2- and activate metal-oxide surfaces for gas sensing.

Chemistry of Oxygen Ionosorption on SnO2 Surfaces

Ionosorbed oxygen is the key player in reactions on metal-oxide surfaces. This is particularly evident for chemiresistive gas sensors, which operate by modulating the conductivity of active materials through the formation/removal of surface O-related acceptors. Strikingly though, the exact type of species behind the sensing response remains obscure even for the most common material systems. The paradigm for ab initio modeling to date has been centered around charge-neutral surface species, ignoring the fact that molecular adsorbates are required to ionize to induce the sensing response. Herein, we resolve this inconsistency by carrying out a careful analysis of all charged O-related species on three naturally occurring surfaces of SnO₂. We reveal that two types of surface acceptors can form spontaneously upon the adsorption of atmospheric oxygen: (i) superoxide O₂^- on the (110) and the (101) surfaces and (ii) doubly ionized O^2- on the (100) facet, with the previous experimental evidence pointing to the latter as the source of sensing response. This species has a unique geometry involving a large displacement of surface Sn, forcing it to attain the coordination resembling that of Sn²⁺ in SnO, which seems necessary to stabilize O^2- and activate metal-oxide surfaces for gas sensing.

Morphology of Ga2O3 Nanowires and Their Sensitivity to Volatile Organic Compounds

Gas sensitive structures made of nanowires exhibit extremally large specific surface area, and a great number of chemically active centres that can react with the ambient atmosphere. This makes the use of nanomaterials promising for super sensitive gas sensor applications. Monoclinic β-Ga₂O₃ nanowires (NWs) were synthesized from metallic gallium at atmospheric pressure in the presence of nitrogen and water vapor. The nanowires were grown directly on interdigitated gold electrodes screen printed on Al₂O₃ substrates, which constituted the gas sensor structure. The observations made with transmission electron microscope (TEM) have shown that the nanowires are monocrystalline and their diameters vary from 80 to 300 nm with the average value of approximately 170 nm. Au droplets were found to be anchored at the tips of the nanowires which may indicate that the nanowires followed the Vapor-Liquid-Solid (VLS) mechanism of growth. The conductivity of β-Ga₂O₃ NWs increases in the presence of volatile organic compounds (VOC) even in the temperature below 600 °C. The gas sensor based on the synthesized β-Ga₂O₃ NWs shows peak sensitivity to 100 ppm of ethanol of 75.1 at 760 °C, while peak sensitivity to 100 ppm of acetone is 27.5 at 690 °C.

Solution-Based Synthesis of Sulvanite Cu3TaS4 and Cu3TaSe4 Nanocrystals

Sulvanites have the parent formula Cu3MCh4. The metal M belongs to group 5 and Ch is a chalcogen. The tantalum sulvanites Cu3TaS4 and Cu3TaSe4 are predicted to have wide band gaps and p-type conductivity and show promise in optoelectronic applications. Their potential as p-type transparent conductors or efficient photocatalysts for visible-light water splitting is a valuable incentive to explore these materials in their nanoscale form, toward bottom-up processing opportunities. Reported herein are the first syntheses of nanosized Cu3TaS4 and Cu3TaSe4 sulvanites, which preserve the parent cubic crystal structure but show that morphology at the nanoscale is dependent of the reaction conditions. The two solution-based methods for synthesizing the tantalum S and Se sulvanites result in Cu3TaS4 or Cu3TaSe4 nanocrystals (NCs) with prismatic morphology, or, in the case of Cu3TaSe4, could lead to core-shell spherical nanostructures. The Cu3TaS4 NCs and Cu3TaSe4 NCs have good absorption in the UV-Vis region, while the Cu3TaSe4 core-shell NCs possess broad absorption bands not only in the UV-Vis but also in the near-infrared region. Photoluminescence measurements of Cu3TaS4 and Cu3TaSe4 reveal optical bandgaps of 2.54 and 2.32 eV, respectively, consistent with the values measured in bulk. Additionally, the current–voltage (I-V) curve of Cu3TaS4 NCs proves its electrical conductivity.

Revealing the competing contributions of charge carriers, excitons, and defects to the non-equilibrium optical properties of ZnO

Due to its wide band gap and high carrier mobility, ZnO is, among other transparent conductive oxides, an attractive material for light-harvesting and optoelectronic applications. Its functional efficiency, however, is strongly affected by defect-related in-gap states that open up extrinsic decay channels and modify relaxation timescales. As a consequence, almost every sample behaves differently, leading to irreproducible or even contradicting observations. Here, a complementary set of time-resolved spectroscopies is applied to two ZnO samples of different defect density to disentangle the competing contributions of charge carriers, excitons, and defects to the nonequilibrium dynamics after photoexcitation: time-resolved photoluminescence, excited state transmission, and electronic sum-frequency generation. Remarkably, defects affect the transient optical properties of ZnO across more than eight orders of magnitude in time, starting with photodepletion of normally occupied defect states on femtosecond timescales, followed by the competition of free exciton emission and exciton trapping at defect sites within picoseconds, photoluminescence of defect-bound and free excitons on nanosecond timescales, and deeply trapped holes with microsecond lifetimes. These findings not only provide the first comprehensive picture of charge and exciton relaxation pathways in ZnO but also uncover the microscopic origin of previous conflicting observations in this challenging material and thereby offer means of overcoming its difficulties. Noteworthy, a similar competition of intrinsic and defect-related dynamics could likely also be utilized in other oxides with marked defect density as, for instance, TiO₂ or SrTiO₃.

Unusual Oxygen Partial Pressure Dependence of Electrical Transport of Single-Crystalline Metal Oxide Nanowires Grown by the Vapor-Liquid-Solid Process

In general, the electrical conductivities of n-type semiconducting metal oxide nanostructures increase with the decrease in the oxygen partial pressure during crystal growth owing to the increased number of crystal imperfections including oxygen vacancies. In this paper, we report an unusual oxygen partial pressure dependence of the electrical conductivity of single-crystalline SnO₂ nanowires grown by a vapor-liquid-solid (VLS) process. The electrical conductivity of a single SnO₂ nanowire, measured using the four-probe method, substantially decreases by 2 orders of magnitude when the oxygen partial pressure for the crystal growth is reduced from 10^-3 to 10^-4 Pa. This contradicts the conventional trend of n-type SnO₂ semiconductors. Spatially resolved single-nanowire electrical transport measurements, microstructure analysis, plane-view electron energy-loss spectroscopy, and molecular dynamics simulations reveal that the observed unusual oxygen partial pressure dependence of the electrical transport is attributed to the intrinsic differences between the two crystal growth interfaces (LS and VS interfaces) in the critical nucleation of the crystal growth and impurity incorporation probability as a function of the oxygen partial pressure. The impurity incorporation probability at the LS interface is always lower than that at the VS interface, even under reduced oxygen partial pressures.

Codoping and Interstitial Deactivation in the Control of Amphoteric Li Dopant in ZnO for the Realization of p-Type TCOs

We report on first principle investigations about the electrical character of Li-X codoped ZnO transparent conductive oxides (TCOs). We studied a set of possible X codopants including either unintentional dopants typically present in the system (e.g., H, O) or monovalent acceptor groups, based on nitrogen and halogens (F, Cl, I). The interplay between dopants and structural point defects in the host (such as vacancies) is also taken explicitly into account, demonstrating the crucial effect that zinc and oxygen vacancies have on the final properties of TCOs. Our results show that Li-ZnO has a p-type character, when Li is included as Zn substitutional dopant, but it turns into an n-type when Li is in interstitial sites. The inclusion of X-codopants is considered to deactivate the n-type character of interstitial Li atoms: the total Li-X compensation effect and the corresponding electrical character of the doped compounds selectively depend on the presence of vacancies in the host. We prove that LiF-doped ZnO is the only codoped system that exhibits a p-type character in the presence of Zn vacancies.

Tuning the Band Bending and Controlling the Surface Reactivity at Polar and Nonpolar Surfaces of ZnO through Phosphonic Acid Binding

ZnO is a prime candidate for future use in transparent electronics; however, development of practical materials requires attention to factors including control of its unusual surface band bending and surface reactivity. In this work, we have modified the O-polar (0001̅), Zn-polar (0001), and m-plane (101̅0) surfaces of ZnO with phosphonic acid (PA) derivatives and measured the effect on the surface band bending and surface sensitivity to atmospheric oxygen. Core level and valence band synchrotron X-ray photoemission spectroscopy was used to measure the surface band bending introduced by PA modifiers with substituents of opposite polarity dipole moment: octadecylphosphonic acid (ODPA) and 3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctylphosphonic acid (F₁₃OPA). Both PAs act as surface electron donors, increasing the downward band bending and the strength of the two-dimensional surface electron accumulation layer on all of the ZnO surfaces investigated. On the O-polar (0001̅) and m-plane (101̅0) surfaces, the ODPA modifier produced the largest increase in downward band bending relative to the hydroxyl-terminated unmodified surface of 0.55 and 0.35 eV, respectively. On the Zn-polar (0001) face, the F₁₃OPA modifier gave the largest increase (by 0.50 eV) producing a total downward band bending of 1.00 eV, representing ∼30% of the ZnO band gap. Ultraviolet (UV) photoinduced surface wettability and photoconductivity measurements demonstrated that the PA modifiers are effective at decreasing the sensitivity of the surface toward atmospheric oxygen. Modification with PA derivatives produced a large increase in the persistence of UV-induced photoconductivity and a large reduction in UV-induced changes in surface wettability.

Scattering attributes of one-dimensional semiconducting oxide nanomaterials individually probed for varying light-matter interaction angles

We report the characteristic optical responses of one-dimensional semiconducting oxide nanomaterials by examining the individual nanorods (NRs) of ZnO, SnO₂, indium tin oxide, and zinc tin oxide under precisely controlled, light-matter interaction geometry. Scattering signals from a large set of NRs of the different types are evaluated spatially along the NR length while varying the NR tilt angle, incident light polarization, and analyzer rotation. Subsequently, we identify material-indiscriminate, NR tilt angle- and incident polarization-dependent scattering behaviors exhibiting continuous, intermittent, and discrete responses. The insight gained from this study can advance our fundamental understanding of the optical behaviors of the technologically useful nanomaterials and, at the same time, promote the development of highly miniaturized, photonic and bio-optical devices utilizing the spatially controllable, optical responses of the individual semiconducting oxide NRs.

Tungsten Doped TiO2 with Enhanced Photocatalytic and Optoelectrical Properties via Aerosol Assisted Chemical Vapor Deposition

Tungsten doped titanium dioxide films with both transparent conducting oxide (TCO) and photocatalytic properties were produced via aerosol-assisted chemical vapor deposition of titanium ethoxide and dopant concentrations of tungsten ethoxide at 500 °C from a toluene solution. The films were anatase TiO_2, with good n-type electrical conductivities as determined via Hall effect measurements. The film doped with 2.25 at.% W showed the lowest resistivity at 0.034 Ω.cm and respectable charge carrier mobility (14.9 cm³/V.s) and concentration (×10¹⁹ cm⁻³). XPS indicated the presence of both W⁶⁺ and W⁴⁺ in the TiO₂ matrix, with the substitutional doping of W⁴⁺ inducing an expansion of the anatase unit cell as determined by XRD. The films also showed good photocatalytic activity under UV-light illumination, with degradation of resazurin redox dye at a higher rate than with undoped TiO₂.

Microscopic origin of electron accumulation in In2O3

Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In(2)O(3)(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrödinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.

Spectroscopy of single donors at ZnO(0001) surfaces

Donors near the polar (0001) surface of nominally undoped ZnO were investigated with scanning tunneling microscopy at 5 K. Spatially resolved spectroscopy reveals single and double charging. Equidistant peaks in spectra of ionized donors are attributed to polaron excitation. The data are consistent with doping due to Zn interstitials or complexes.

Multi-component transparent conducting oxides: progress in materials modelling

Transparent conducting oxides (TCOs) play an essential role in modern optoelectronic devices through their combination of electrical conductivity and optical transparency. We review recent progress in our understanding of multi-component TCOs formed from solid solutions of ZnO, In(2)O(3), Ga(2)O(3) and Al(2)O(3), with a particular emphasis on the contributions of materials modelling, primarily based on density functional theory. In particular, we highlight three major results from our work: (i) the fundamental principles governing the crystal structures of multi-component oxide structures including (In(2)O(3))(ZnO)(n) and (In(2)O(3))(m)(Ga(2)O(3))(l)(ZnO)(n); (ii) the relationship between elemental composition and optical and electrical behaviour, including valence band alignments; (iii) the high performance of amorphous oxide semiconductors. On the basis of these advances, the challenge of the rational design of novel electroceramic materials is discussed.