Contrast inversion of the h-BN nanomesh investigated by nc-AFM and Kelvin probe force microscopy

Topography inversion in scanning tunneling microscopy of single-atom-thick materials from penetrating substrate states

Scanning tunneling microscopy (STM) is one of the indispensable tools to characterize surface structures, but the distinction between atomic geometry and electronic effects based on the measured tunneling current is not always straightforward. In particular, for single-atomic-thick materials (graphene or boron nitride) on metallic substrates, counterintuitive phenomena such as a larger tunneling current for insulators than for metal and a topography opposite to the atomic geometry are reported. Using first-principles density functional theory calculations combined with analytical modeling, we reveal the critical role of penetrating states of metallic substrates that surpass 2D material states, hindering the measurement of intrinsic 2D materials states and leading to topography inversion. Our finding should be instrumental in the interpretation of STM topographies of atomic-thick materials and in the development of 2D material for (opto)electronic and various quantum applications.

Structural evolution and electronic properties of medium-sized boron clusters doped with scandium

Doping of boron-based materials with transition metal atoms allows one to tune or modify the properties and structure of the materials. In this work, an extensive search for the global minima on potential energy surfaces of ScB _n and ScB[Formula: see text] clusters has been performed using the CALYPSO method. The structural evolution of scandium doped boron clusters of this range is found to proceed in three steps; namely, the formation of half-sandwich type structures is followed by the formation of drum-like structures with the Sc atom located at the center and terminates with the cage-like structures. It is also found that highly symmetrical geometric structures are more common for the smaller size range of [Formula: see text]. The neutral ScB₁₃ cluster is identified as magic on the basis of an analysis of relative stabilities in the ScB _n series. Our analysis of chemical bonding has shown that the stability of this cluster is mainly due to the formation of several delocalized [Formula: see text]-bonding molecular orbitals composed of Sc 3d and B 2s atomic orbitals. These bonds appear to be responsible for the enhanced stability of ScB₁₃ with respect to other Sc-doped boron clusters.

Elemental Identification by Combining Atomic Force Microscopy and Kelvin Probe Force Microscopy

There are currently no experimental techniques that combine atomic-resolution imaging with elemental sensitivity and chemical fingerprinting on single molecules. The advent of using molecular-modified tips in noncontact atomic force microscopy (nc-AFM) has made it possible to image (planar) molecules with atomic resolution. However, the mechanisms responsible for elemental contrast with passivated tips are not fully understood. Here, we investigate elemental contrast by carrying out both nc-AFM and Kelvin probe force microscopy (KPFM) experiments on epitaxial monolayer hexagonal boron nitride (hBN) on Ir(111). The hBN overlayer is inert, and the in-plane bonds connecting nearest-neighbor boron and nitrogen atoms possess strong covalent character and a bond length of only ∼1.45 Å. Nevertheless, constant-height maps of both the frequency shift Δ f and the local contact potential difference exhibit striking sublattice asymmetry. We match the different atomic sites with the observed contrast by comparison with nc-AFM image simulations based on the density functional theory optimized hBN/Ir(111) geometry, which yields detailed information on the origin of the atomic-scale contrast.