Effects of Ni vacancies and crystallite size on the O 1s and Ni 2p x-ray absorption spectra of nanocrystalline NiO

Facet-Dependent Surface Restructuring on Nickel (Oxy)hydroxides: A Self-Activation Process for Enhanced Oxygen Evolution Reaction

Unraveling the catalyst surface structure and behavior during reactions is essential for both mechanistic understanding and performance optimization. Here we report a phenomenon of facet-dependent surface restructuring intrinsic to β-Ni(OH)2 catalysts during oxygen evolution reaction (OER), discovered by the correlative ex situ and operando characterization. The ex situ study after OER reveals β-Ni(OH)2 restructuring at the edge facets to form nanoporous Ni1-xO, which is Ni deficient containing Ni3+ species. Operando liquid transmission electron microscopy (TEM) and Raman spectroscopy further identify the active role of the intermediate β-NiOOH phase in both the OER catalysis and Ni1-xO formation, pinpointing the complete surface restructuring pathway. Such surface restructuring is shown to effectively increase the exposed active sites, accelerate Ni oxidation kinetics, and optimize *OH intermediate bonding energy toward fast OER kinetics, which leads to an extraordinary activity enhancement of ∼16-fold. Facilitated by such a self-activation process, the specially prepared β-Ni(OH)2 with larger edge facets exhibits a 470-fold current enhancement than that of the benchmark IrO2, demonstrating a promising way to optimize metal-(oxy)hydroxide-based catalysts.

Electron Deficient Ir-O Bonds Promote Heterogeneous Ir-Catalyzed Anti-Markovnikov Hydroboration of Alkenes under Mild Neat Conditions

Tuning electronic characteristics of metal-ligand bonds based on reaction pathways to achieve efficient catalytic processes has been widely studied and proven to be feasible in homogeneous catalysis, but it is scarcely investigated in heterogeneous catalysis. Herein, we demonstrate the regulation of the electronic configuration of Ir-O bonds in an Ir single-atom catalyst according to the borane activation mechanism. Ir-O bonds in Ir1/Ni(OH)x are found to be more electron-poor than those in Ir1/NiOx. Despite the mild solvent-free conditions and ambient temperature, Ir1/Ni(OH)x exhibits outstanding performance for the hydroboration of alkenes, furnishing the desired alkylboronic esters with a turnover frequency value of ≤3060 h-1 and 99% anti-Markovnikov selectivity, which is significantly better than that of Ir1/NiOx (42 h-1). It is further proven that the more electron-poor Ir-O bonds as active centers are more oxidative and so benefit the activation of the H-B bond in the reductive pinacolborane.

Strong oxygen-content dependence of the magnetic excitations in antiferromagnetic NiO nanoparticles: A Raman probe

Nanostructured antiferromagnetic (AFM) NiO has attracted much attention from both the fundamental and applied perspectives. Understanding the two-magnon (2 M) is of great significance in NiO applications such as spin valves and next-generation magnetic random access memories (MRAM). We investigated the phonon modes and antiferromagnetically ordered states of NiO nanoparticles prepared by empirically controlled measurements. An intensity enhancement of the 2 M mode was observed by Raman spectroscopy as the NiO nanoparticles were vacuum annealed at 650 ℃. The increased 2 M peak intensity in NiO nanoparticles is explained by the local symmetry conversions from NiO₅ to NiO₆ configurations due to the oxygen redistribution during the vacuum annealing. The change of the splitting of anisotropic transverse optical (TO) phonon with different oxygen contents was also revealed by the Raman spectroscopy. We have shown that the changes in the oxygen environment underlie both the change in the 2 M intensity and the splitting of TO phonon in the NiO nanoparticles. Our work offers an efficient avenue to strengthen the AFM ordering and emphasizes the effect of vacuum annealing of the NiO nanoparticles, opening the interesting possibility of individual parameter control in practical applications.

High-Performance Room-Temperature Conductometric Gas Sensors: Materials and Strategies

Chemiresistive sensors have gained increasing interest in recent years due to the necessity of low-cost, effective, high-performance gas sensors to detect volatile organic compounds (VOC) and other harmful pollutants. While most of the gas sensing technologies rely on the use of high operation temperatures, which increase usage cost and decrease efficiency due to high power consumption, a particular subset of gas sensors can operate at room temperature (RT). Current approaches are aimed at the development of high-sensitivity and multiple-selectivity room-temperature sensors, where substantial research efforts have been conducted. However, fewer studies presents the specific mechanism of action on why those particular materials can work at room temperature and how to both enhance and optimize their RT performance. Herein, we present strategies to achieve RT gas sensing for various materials, such as metals and metal oxides (MOs), as well as some of the most promising candidates, such as polymers and hybrid composites. Finally, the future promising outlook on this technology is discussed.

Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique

Breaking time-reversal symmetry by introducing magnetic order, thereby opening a gap in the topological surface state bands, is essential for realizing useful topological properties such as the quantum anomalous Hall and axion insulator states. In this work, a novel topological antiferromagnetic (AFM) phase is created at the interface of a sputtered, c-axis-oriented, topological insulator/ferromagnet heterostructure-Bi₂ Te₃ /Ni₈₀ Fe₂₀ because of diffusion of Ni in Bi₂ Te₃ (Ni-Bi₂ Te₃ ). The AFM property of the Ni-Bi₂ Te₃ interfacial layer is established by observation of spontaneous exchange bias in the magnetic hysteresis loop and compensated moments in the depth profile of the magnetization using polarized neutron reflectometry. Analysis of the structural and chemical properties of the Ni-Bi₂ Te₃ layer is carried out using selected-area electron diffraction, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. These studies, in parallel with first-principles calculations, indicate a solid-state chemical reaction that leads to the formation of Ni-Te bonds and the presence of topological antiferromagnetic (AFM) compound NiBi₂ Te₄ in the Ni-Bi₂ Te₃ interface layer. The Neél temperature of the Ni-Bi₂ Te₃ layer is ≈63 K, which is higher than that of typical magnetic topological insulators (MTIs). The presented results provide a pathway toward industrial complementary metal-oxide-semiconductor (CMOS)-process-compatible sputtered-MTI heterostructures, leading to novel materials for topological quantum devices.

Revealing the role of lattice distortions in the hydrogen-induced metal-insulator transition of SmNiO3

The discovery of hydrogen-induced electronic phase transitions in strongly correlated materials such as rare-earth nickelates has opened up a new paradigm in regulating materials’ properties for both fundamental study and technological applications. However, the microscopic understanding of how protons and electrons behave in the phase transition is lacking, mainly due to the difficulty in the characterization of the hydrogen doping level. Here, we demonstrate the quantification and trajectory of hydrogen in strain-regulated SmNiO₃ by using nuclear reaction analysis. Introducing 2.4% of elastic strain in SmNiO₃ reduces the incorporated hydrogen concentration from ~10²¹ cm⁻³ to ~10²⁰ cm⁻³. Unexpectedly, despite a lower hydrogen concentration, a more significant modification in resistivity is observed for tensile-strained SmNiO₃, substantially different from the previous understanding. We argue that this transition is explained by an intermediate metastable state occurring in the transient diffusion process of hydrogen, despite the absence of hydrogen at the post-transition stage.

Proton doping can induce metal-insulator transitions in rare-earth nickelates, demonstrating the complex interplay between dopants and electronic degrees of freedom. Chen et al. use results on strained films to argue that local proton-induced lattice distortions strongly influence the transition.

Engineered Mott ground state in a LaTiO(3+δ)/LaNiO3 heterostructure

In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures based on LaNiO₃ have inspired a wealth of exciting experimental and theoretical results. However, to date there is a very limited experimental understanding of the electronic and orbital states emerging from interfacial charge transfer and their connections to the modified band structure at the interface. Towards this goal, we have synthesized a prototypical superlattice composed of a correlated metal LaNiO₃ and a doped Mott insulator LaTiO_3+δ, and investigated its electronic structure by resonant X-ray absorption spectroscopy combined with X-ray photoemission spectroscopy, electrical transport and theory calculations. The heterostructure exhibits interfacial charge transfer from Ti to Ni sites, giving rise to an insulating ground state with orbital polarization and e_g orbital band splitting. Our findings demonstrate how the control over charge at the interface can be effectively used to create exotic electronic, orbital and spin states.

Interfaces between two dissimilar transition metal oxides can exhibit emergent strongly correlated electronic and magnetic states due to charge transfer and electronic reconfiguration. Here, the authors synthesize and investigate an exotic Mott ground state in LaTiO_3+δ/LaNiO₃ heterostructures.