Phase transition and band-structure tuning in InN through uniaxial and biaxial strains

Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

In this study, we report the catalyst-free growth of n-type wurtzite InN, along with its optical properties and carrier dynamics of different surface dimensionalities. The self-catalyzed epitaxial growth of InN nanorods grown by metal–organic molecular-beam epitaxy on GaN/Al2O3(0001) substrates has been demonstrated. The substrate temperature is dominant in controlling the growth of nanorods. A dramatic morphological change from 2D-like to 1D nanorods occurs with decreasing growth temperature. The InN nanorods have a low dislocation density and good crystalline quality, compared with InN films. In terms of optical properties, the nanorod structure exhibits strong recombination of Mahan excitons in luminescence, and an obvious spatial correlation effect in phonon dispersion. The downward band structure at the nanorod surface leads to the photon energy-dependent lifetime being upshifted to the high-energy side.

Different evolutionary pathways from B4 to B1 phase in AlN and InN: metadynamics investigations

Pressure-induced B4-B1 phase transitions of AlN and InN at ambient temperature are systematically investigated using density functional-based metadynamics simulations. A homogeneous deformation path, which is energetically favorable, is through a hexagonal structure for AlN, and through a tetragonal structure for InN. Furthermore, the dynamical stability, instead of the mechanical stability, is crucial to determining the phase-transition paths: the intermediate hexagonal structure can remain stable, whereas the tetragonal structure is always unstable. The B4 phase always shows the direct band gap before the occurrence of structure transition, while the band gap of stable intermediate hexagonal phase is indirect for AlN. Finally, the band gap of the ultimate cubic phase is direct for AlN and indirect for InN, due to the strong p-d repulsion at the R point.

Comparing LDA-1/2, HSE03, HSE06 and G₀W₀ approaches for band gap calculations of alloys

It has long been known that the local density approximation and the generalized gradient approximation do not furnish reliable band gaps, and one needs to go beyond these approximations to reliably describe these properties. Among alternatives are the use of hybrid functionals (HSE03 and HSE06 being popular), the GW approximation or the recently proposed LDA-1/2 method. In this work, we compare rigorously the performance of these four methods in describing the band gaps of alloys, employing the generalized quasi-chemical approach to treat the disorder of the alloy and to obtain judiciously the band gap for the entire compositional range. Zincblende InGaAs and InGaN were chosen as prototypes due to their importance in optoelectronic applications. The comparison between these four approaches was guided both by the agreement between the predicted band gap and the experimental one, and by the demanded computational effort (time and memory). We observed that the HSE06 method provided the most accurate results (in comparison with experiments), whereas, surprisingly, the LDA-1/2 method gave the best compromise between accuracy and computational resources. Due to its low computational cost and good accuracy, we decided to double the supercell used to describe the alloys, and employing LDA-1/2 we observed that the bowing parameter changed remarkably, only agreeing with the measured one for the larger supercell, where LDA-1/2 plays an important role.