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Colonna N, De Gennaro R, Linscott E, Marzari N. Koopmans Spectral Functionals in Periodic Boundary Conditions. J Chem Theory Comput 2022; 18:5435-5448. [PMID: 35924825 DOI: 10.1021/acs.jctc.2c00161] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Koopmans spectral functionals aim to describe simultaneously ground-state properties and charged excitations of atoms, molecules, nanostructures, and periodic crystals. This is achieved by augmenting standard density functionals with simple but physically motivated orbital-density-dependent corrections. These corrections act on a set of localized orbitals that, in periodic systems, resemble maximally localized Wannier functions. At variance with the original, direct supercell implementation (Phys. Rev. X 2018, 8, 021051), we discuss here (i) the complex but efficient formalism required for a periodic boundary code using explicit Brillouin zone sampling and (ii) the calculation of the screened Koopmans corrections with density functional perturbation theory. In addition to delivering improved scaling with system size, the present development makes the calculation of band structures with Koopmans functionals straightforward. The implementation in the open-source Quantum ESPRESSO distribution and the application to prototypical insulating and semiconducting systems are presented and discussed.
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Affiliation(s)
- Nicola Colonna
- Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institute, 5232 Villigen PSI, Switzerland.,National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Riccardo De Gennaro
- National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.,Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Edward Linscott
- National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.,Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Nicola Marzari
- National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.,Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.,Laboratory for Materials Simulations, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
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Snir N, Toroker MC. The Operando Optical Spectrum of Hematite during Water Splitting through a GW-BSE Calculation. J Chem Theory Comput 2020; 16:4857-4864. [PMID: 32603108 DOI: 10.1021/acs.jctc.9b00595] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Hematite is a possible photoanode for photoelectrochemical cells (PECs) that is widely studied using density functional theory (DFT). In this paper we perform more accurate calculations of the absorption spectrum of hematite using the one-shot Green's function (G0W0) and Bethe-Salpeter equation (BSE) methods, which take excited states into account and compare the spectrum to experimental data. We found a match between our calculations and the observed absorption spectra in peak locations. Furthermore, there is anisotropy of the absorption spectra that is concurrent with the crystal structure. We also calculated the absorption spectrum of hematite intermediates during catalysis of the oxygen evolution reaction to better understand which intermediate is dominant during the reaction and the contribution of excited states to catalysis. The *O intermediate was found to be the most optically and chemically dominant species during catalysis.
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Affiliation(s)
- Nadav Snir
- Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Maytal Caspary Toroker
- Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel.,The Nancy and Stephen Grand Technion Energy Program, Technion-Israel Institute of Technology, Haifa 3200003, Israel
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Gerosa M, Bottani CE, Di Valentin C, Onida G, Pacchioni G. Accuracy of dielectric-dependent hybrid functionals in the prediction of optoelectronic properties of metal oxide semiconductors: a comprehensive comparison with many-body GW and experiments. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:044003. [PMID: 29087359 DOI: 10.1088/1361-648x/aa9725] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Understanding the electronic structure of metal oxide semiconductors is crucial to their numerous technological applications, such as photoelectrochemical water splitting and solar cells. The needed experimental and theoretical knowledge goes beyond that of pristine bulk crystals, and must include the effects of surfaces and interfaces, as well as those due to the presence of intrinsic defects (e.g. oxygen vacancies), or dopants for band engineering. In this review, we present an account of the recent efforts in predicting and understanding the optoelectronic properties of oxides using ab initio theoretical methods. In particular, we discuss the performance of recently developed dielectric-dependent hybrid functionals, providing a comparison against the results of many-body GW calculations, including G 0 W 0 as well as more refined approaches, such as quasiparticle self-consistent GW. We summarize results in the recent literature for the band gap, the band level alignment at surfaces, and optical transition energies in defective oxides, including wide gap oxide semiconductors and transition metal oxides. Correlated transition metal oxides are also discussed. For each method, we describe successes and drawbacks, emphasizing the challenges faced by the development of improved theoretical approaches. The theoretical section is preceded by a critical overview of the main experimental techniques needed to characterize the optoelectronic properties of semiconductors, including absorption and reflection spectroscopy, photoemission, and scanning tunneling spectroscopy (STS).
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Affiliation(s)
- M Gerosa
- Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637, United States of America
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Hung L, Bruneval F, Baishya K, Öğüt S. Benchmarking the GW Approximation and Bethe–Salpeter Equation for Groups IB and IIB Atoms and Monoxides. J Chem Theory Comput 2017; 13:2135-2146. [DOI: 10.1021/acs.jctc.7b00123] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/19/2023]
Affiliation(s)
- Linda Hung
- NIST
Center for Neutron Research, National Institute of Standard and Technology, Gaithersburg, Maryland 20899, United States
| | - Fabien Bruneval
- CEA,
DEN, Service de Recherches de Métallurgie Physique, Université Paris-Saclay, F-91191 Gif-sur-Yvette, France
| | - Kopinjol Baishya
- Department
of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, United States
| | - Serdar Öğüt
- Department
of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, United States
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van Setten MJ, Caruso F, Sharifzadeh S, Ren X, Scheffler M, Liu F, Lischner J, Lin L, Deslippe JR, Louie SG, Yang C, Weigend F, Neaton JB, Evers F, Rinke P. GW100: Benchmarking G0W0 for Molecular Systems. J Chem Theory Comput 2015; 11:5665-87. [DOI: 10.1021/acs.jctc.5b00453] [Citation(s) in RCA: 223] [Impact Index Per Article: 24.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Michiel J. van Setten
- Nanoscopic
Physics, Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, Louvain-la-Neuve, 1348, Belgium
- Institute
of Nanotechnology and 3Institute of Physical Chemistry, Karlsruhe Institute of Technology Campus North, Karlsruhe, 76344 Germany
| | - Fabio Caruso
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, 14195, Germany
- Department
of Materials, University of Oxford, Oxford, OX1 3PH, United Kingdom
| | - Sahar Sharifzadeh
- Department
of Electrical and Computer Engineering, Department of Physics, Division
of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States
| | - Xinguo Ren
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, 14195, Germany
- Key Laboratory
of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
| | - Matthias Scheffler
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, 14195, Germany
| | - Fang Liu
- School of
Applied Mathematics, Central University of Finance and Economics, Beijing, China
| | - Johannes Lischner
- Department
of Physics, University of California, Berkeley, California 94720, United States
| | | | - Jack R. Deslippe
- National Energy Research Scientific Computing Center, Berkeley, California 94720, United States
| | - Steven G. Louie
- Department
of Physics, University of California, Berkeley, California 94720, United States
| | | | - Florian Weigend
- Institute
of Nanotechnology and 3Institute of Physical Chemistry, Karlsruhe Institute of Technology Campus North, Karlsruhe, 76344 Germany
| | - Jeffrey B. Neaton
- Department
of Physics, University of California, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at Berkeley, Berkeley, California 94720 United States
| | - Ferdinand Evers
- Institute
of Theoretical Physics, University of Regensburg, Regensburg, 93040, Germany
| | - Patrick Rinke
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, 14195, Germany
- COMP/Department
of Applied Physics, Aalto University School of Science, Aalto 00076, Finland
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