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Mondal S, Jayalekshmi UJ, Singh S, Mukherjee RK, Shukla AK. Design, development, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2024; 95:063901. [PMID: 38829214 DOI: 10.1063/5.0194852] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2023] [Accepted: 05/15/2024] [Indexed: 06/05/2024]
Abstract
A versatile graphene epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) in diverse growth environments ranging from high vacuum to atmospheric argon pressure. Radio-frequency induction enables heating capabilities up to 2000 °C, with controlled heating ramp rates achievable up to 200 °C/s. The details of critical design aspects and temperature characteristics of the GrapE system are discussed. The GrapE system, being automated, has enabled the growth of high-quality EG monolayers and turbostratic EG on SiC using diverse methodologies, such as confinement-controlled sublimation (CCS), open configuration, polymer-assisted CCS, and rapid thermal annealing. This showcases the versatility of the GrapE system in EG growth. Comprehensive characterizations involving atomic force microscopy, Raman spectroscopy, and low-energy electron diffraction techniques were employed to validate the quality of the produced EG.
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Affiliation(s)
- S Mondal
- CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - U J Jayalekshmi
- CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - S Singh
- CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
| | - R K Mukherjee
- CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - A K Shukla
- CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
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2
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Chatterjee A, Kruskopf M, Wundrack S, Hinze P, Pierz K, Stosch R, Scherer H. Impact of Polymer-Assisted Epitaxial Graphene Growth on Various Types of SiC Substrates. ACS APPLIED ELECTRONIC MATERIALS 2022; 4:5317-5325. [PMID: 36439398 PMCID: PMC9686134 DOI: 10.1021/acsaelm.2c00989] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2022] [Accepted: 10/16/2022] [Indexed: 06/16/2023]
Abstract
The growth parameters for epitaxial growth of graphene on silicon carbide (SiC) have been the focus of research over the past few years. However, besides the standard growth parameters, the influence of the substrate pretreatment and properties of the underlying SiC wafer are critical parameters for optimizing the quality of monolayer graphene on SiC. In this systematic study, we show how the surface properties and the pretreatment determine the quality of monolayer graphene using polymer-assisted sublimation growth (PASG) on SiC. Using the spin-on deposition technique of PASG, several polymer concentrations have been investigated to understand the influence of the polymer content on the final monolayer coverage using wafers of different miscut angles and different polytypes. Confocal laser scanning microscopy (CLSM), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) were used to characterize these films. The results show that, even for SiC substrates with high miscut angles, high-quality graphene is obtained when an appropriate polymer concentration is applied. This is in excellent agreement with the model understanding that an insufficient carbon supply from SiC step edge decomposition can be compensated by additionally providing carbon from a polymer source. The described methods make the PASG spin-on deposition technique more convenient for commercial use.
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Shtepliuk I, Vagin M, Khan Z, Zakharov AA, Iakimov T, Giannazzo F, Ivanov IG, Yakimova R. Understanding of the Electrochemical Behavior of Lithium at Bilayer-Patched Epitaxial Graphene/4H-SiC. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2229. [PMID: 35808065 PMCID: PMC9268403 DOI: 10.3390/nano12132229] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/13/2022] [Revised: 06/27/2022] [Accepted: 06/28/2022] [Indexed: 02/01/2023]
Abstract
Novel two-dimensional materials (2DMs) with balanced electrical conductivity and lithium (Li) storage capacity are desirable for next-generation rechargeable batteries as they may serve as high-performance anodes, improving output battery characteristics. Gaining an advanced understanding of the electrochemical behavior of lithium at the electrode surface and the changes in interior structure of 2DM-based electrodes caused by lithiation is a key component in the long-term process of the implementation of new electrodes into to a realistic device. Here, we showcase the advantages of bilayer-patched epitaxial graphene on 4H-SiC (0001) as a possible anode material in lithium-ion batteries. The presence of bilayer graphene patches is beneficial for the overall lithiation process because it results in enhanced quantum capacitance of the electrode and provides extra intercalation paths. By performing cyclic voltammetry and chronoamperometry measurements, we shed light on the redox behavior of lithium at the bilayer-patched epitaxial graphene electrode and find that the early-stage growth of lithium is governed by the instantaneous nucleation mechanism. The results also demonstrate the fast lithium-ion transport (~4.7-5.6 × 10-7 cm2∙s-1) to the bilayer-patched epitaxial graphene electrode. Raman measurements complemented by in-depth statistical analysis and density functional theory calculations enable us to comprehend the lithiation effect on the properties of bilayer-patched epitaxial graphene and ascribe the lithium intercalation-induced Raman G peak splitting to the disparity between graphene layers. The current results are helpful for further advancement of the design of graphene-based electrodes with targeted performance.
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Affiliation(s)
- Ivan Shtepliuk
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden; (T.I.); (I.G.I.); (R.Y.)
| | - Mikhail Vagin
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, SE-60174 Norrköping, Sweden; (M.V.); (Z.K.)
| | - Ziyauddin Khan
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, SE-60174 Norrköping, Sweden; (M.V.); (Z.K.)
| | - Alexei A. Zakharov
- MAX IV Laboratory, Lund University, Fotongatan 2, SE-22484 Lund, Sweden;
| | - Tihomir Iakimov
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden; (T.I.); (I.G.I.); (R.Y.)
| | | | - Ivan G. Ivanov
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden; (T.I.); (I.G.I.); (R.Y.)
| | - Rositsa Yakimova
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden; (T.I.); (I.G.I.); (R.Y.)
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Gruschwitz M, Ghosal C, Shen TH, Wolff S, Seyller T, Tegenkamp C. Surface Transport Properties of Pb-Intercalated Graphene. MATERIALS 2021; 14:ma14247706. [PMID: 34947298 PMCID: PMC8705698 DOI: 10.3390/ma14247706] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2021] [Revised: 12/06/2021] [Accepted: 12/09/2021] [Indexed: 11/26/2022]
Abstract
Intercalation experiments on epitaxial graphene are attracting a lot of attention at present as a tool to further boost the electronic properties of 2D graphene. In this work, we studied the intercalation of Pb using buffer layers on 6H-SiC(0001) by means of electron diffraction, scanning tunneling microscopy, photoelectron spectroscopy and in situ surface transport. Large-area intercalation of a few Pb monolayers succeeded via surface defects. The intercalated Pb forms a characteristic striped phase and leads to formation of almost charge neutral graphene in proximity to a Pb layer. The Pb intercalated layer consists of 2 ML and shows a strong structural corrugation. The epitaxial heterostructure provides an extremely high conductivity of σ=100 mS/□. However, at low temperatures (70 K), we found a metal-insulator transition that we assign to the formation of minigaps in epitaxial graphene, possibly induced by a static distortion of graphene following the corrugation of the interface layer.
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Effect of graphene substrate type on formation of Bi 2Se 3 nanoplates. Sci Rep 2019; 9:4791. [PMID: 30886194 PMCID: PMC6423328 DOI: 10.1038/s41598-019-41178-1] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/31/2018] [Accepted: 02/14/2019] [Indexed: 11/15/2022] Open
Abstract
Knowledge of nucleation and further growth of Bi2Se3 nanoplates on different substrates is crucial for obtaining ultrathin nanostructures and films of this material by physical vapour deposition technique. In this work, Bi2Se3 nanoplates were deposited under the same experimental conditions on different types of graphene substrates (as-transferred and post-annealed chemical vapour deposition grown monolayer graphene, monolayer graphene grown on silicon carbide substrate). Dimensions of the nanoplates deposited on graphene substrates were compared with the dimensions of the nanoplates deposited on mechanically exfoliated mica and highly ordered pyrolytic graphite flakes used as reference substrates. The influence of different graphene substrates on nucleation and further lateral and vertical growth of the Bi2Se3 nanoplates is analysed. Possibility to obtain ultrathin Bi2Se3 thin films on these substrates is evaluated. Between the substrates considered in this work, graphene grown on silicon carbide is found to be the most promising substrate for obtaining of 1–5 nm thick Bi2Se3 films.
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Kästner B, Schmähling F, Hornemann A, Ulrich G, Hoehl A, Kruskopf M, Pierz K, Raschke MB, Wübbeler G, Elster C. Compressed sensing FTIR nano-spectroscopy and nano-imaging. OPTICS EXPRESS 2018; 26:18115-18124. [PMID: 30114091 DOI: 10.1364/oe.26.018115] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2018] [Accepted: 06/10/2018] [Indexed: 06/08/2023]
Abstract
Infrared scattering scanning near-field optical microscopy (IR s-SNOM) provides for spectroscopic imaging with nanometer spatial resolution, yet full spatio-spectral imaging is constrained by long measurement times. Here, we demonstrate the application of compressed sensing algorithms to achieve hyperspectral FTIR-based nano-imaging at an order of magnitude faster imaging speed to achieve the same spectral content compared to conventional approaches. At the example of the spectroscopy of a single vibrational resonance, we discuss the relationship of prior knowledge of sparseness of the employed Fourier base functions and sub-sampling. Compressed sensing nano-FTIR spectroscopy promises both rapid and sensitive chemical nano-imaging which is highly relevant in academic and industrial settings for fundamental and applied nano- and bio-materials research.
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Kästner B, Johnson CM, Hermann P, Kruskopf M, Pierz K, Hoehl A, Hornemann A, Ulrich G, Fehmel J, Patoka P, Rühl E, Ulm G. Infrared Nanospectroscopy of Phospholipid and Surfactin Monolayer Domains. ACS OMEGA 2018; 3:4141-4147. [PMID: 30023886 PMCID: PMC6044929 DOI: 10.1021/acsomega.7b01931] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2017] [Accepted: 03/16/2018] [Indexed: 05/22/2023]
Abstract
A main challenge in understanding the structure of a cell membrane and its interactions with drugs is the ability to chemically study the different molecular species on the nanoscale. We have achieved this for a model system consisting of mixed monolayers (MLs) of the biologically relevant phospholipid 1,2-distearoyl-sn-glycero-phosphatidylcholine and the antibiotic surfactin. By employing nano-infrared (IR) microscopy and spectroscopy in combination with atomic force microscopy imaging, it was possible to identify and chemically detect domain formation of the two constituents as well as to obtain IR spectra of these species with a spatial resolution on the nanoscale. A novel method to enhance the near-field imaging contrast of organic MLs by plasmon interferometry is proposed and demonstrated. In this technique, the organic layer is deposited on gold and ML graphene substrates, the latter of which supports propagating surface plasmons. Plasmon reflections arising from changes in the dielectric environment provided by the organic layer lead to an additional contrast mechanism. Using this approach, the interfacial region between surfactin and the phospholipid has been mapped and a transition region is identified.
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Affiliation(s)
- Bernd Kästner
- Physikalisch-Technische
Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin, Germany
- E-mail: (B.K.)
| | - C. Magnus Johnson
- Department
of Chemistry, Division of Surface and Corrosion Science, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
| | - Peter Hermann
- Physikalisch-Technische
Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin, Germany
| | - Mattias Kruskopf
- Physikalisch-Technische
Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig, Germany
| | - Klaus Pierz
- Physikalisch-Technische
Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig, Germany
| | - Arne Hoehl
- Physikalisch-Technische
Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin, Germany
| | - Andrea Hornemann
- Physikalisch-Technische
Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin, Germany
| | - Georg Ulrich
- Physikalisch-Technische
Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin, Germany
| | - Jakob Fehmel
- Physikalisch-Technische
Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin, Germany
| | - Piotr Patoka
- Physikalische
Chemie, Institut für Chemie und Biochemie, Freie Universität Berlin, Takustr. 3, 14195 Berlin, Germany
| | - Eckart Rühl
- Physikalische
Chemie, Institut für Chemie und Biochemie, Freie Universität Berlin, Takustr. 3, 14195 Berlin, Germany
| | - Gerhard Ulm
- Physikalisch-Technische
Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin, Germany
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Momeni Pakdehi D, Aprojanz J, Sinterhauf A, Pierz K, Kruskopf M, Willke P, Baringhaus J, Stöckmann JP, Traeger GA, Hohls F, Tegenkamp C, Wenderoth M, Ahlers FJ, Schumacher HW. Minimum Resistance Anisotropy of Epitaxial Graphene on SiC. ACS APPLIED MATERIALS & INTERFACES 2018; 10:6039-6045. [PMID: 29377673 DOI: 10.1021/acsami.7b18641] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
We report on electronic transport measurements in rotational square probe configuration in combination with scanning tunneling potentiometry of epitaxial graphene monolayers which were fabricated by polymer-assisted sublimation growth on SiC substrates. The absence of bilayer graphene on the ultralow step edges of below 0.75 nm scrutinized by atomic force microscopy and scanning tunneling microscopy result in a not yet observed resistance isotropy of graphene on 4H- and 6H-SiC(0001) substrates as low as 2%. We combine microscopic electronic properties with nanoscale transport experiments and thereby disentangle the underlying microscopic scattering mechanism to explain the remaining resistance anisotropy. Eventually, this can be entirely attributed to the resistance and the number of substrate steps which induce local scattering. Thereby, our data represent the ultimate limit for resistance isotropy of epitaxial graphene on SiC for the given miscut of the substrate.
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Affiliation(s)
- D Momeni Pakdehi
- Physikalisch-Technische Bundesanstalt , Bundesallee 100, 38116 Braunschweig, Germany
| | - J Aprojanz
- Institut für Festkörperphysik, Leibniz Universität Hannover , Appelstraße 2, 30167 Hannover, Germany
| | - A Sinterhauf
- IV. Physikalisches Institut der Universität Göttingen , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
- International Center for Advanced Studies of Energy Conversion (ICASEC) der Universität Göttingen , 37077 Göttingen, Germany
| | - K Pierz
- Physikalisch-Technische Bundesanstalt , Bundesallee 100, 38116 Braunschweig, Germany
| | - M Kruskopf
- Physikalisch-Technische Bundesanstalt , Bundesallee 100, 38116 Braunschweig, Germany
| | - P Willke
- IV. Physikalisches Institut der Universität Göttingen , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
| | - J Baringhaus
- Institut für Festkörperphysik, Leibniz Universität Hannover , Appelstraße 2, 30167 Hannover, Germany
| | - J P Stöckmann
- Institut für Festkörperphysik, Leibniz Universität Hannover , Appelstraße 2, 30167 Hannover, Germany
| | - G A Traeger
- IV. Physikalisches Institut der Universität Göttingen , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
| | - F Hohls
- Physikalisch-Technische Bundesanstalt , Bundesallee 100, 38116 Braunschweig, Germany
| | - C Tegenkamp
- Institut für Festkörperphysik, Leibniz Universität Hannover , Appelstraße 2, 30167 Hannover, Germany
- Institute of Physics of Technische Universität Chemnitz , Reichenhainer Straße 70, 09126 Chemnitz, Germany
| | - M Wenderoth
- IV. Physikalisches Institut der Universität Göttingen , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
- International Center for Advanced Studies of Energy Conversion (ICASEC) der Universität Göttingen , 37077 Göttingen, Germany
| | - F J Ahlers
- Physikalisch-Technische Bundesanstalt , Bundesallee 100, 38116 Braunschweig, Germany
| | - H W Schumacher
- Physikalisch-Technische Bundesanstalt , Bundesallee 100, 38116 Braunschweig, Germany
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Pang J, Mendes RG, Wrobel PS, Wlodarski MD, Ta HQ, Zhao L, Giebeler L, Trzebicka B, Gemming T, Fu L, Liu Z, Eckert J, Bachmatiuk A, Rümmeli MH. Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/SiO x by Chemical Vapor Deposition. ACS NANO 2017; 11:1946-1956. [PMID: 28117971 DOI: 10.1021/acsnano.6b08069] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
To synthesize graphene by chemical vapor deposition (CVD) both in large area and with uniform layer number directly over Si/SiOx has proven challenging. The use of catalytically active metal substrates, in particular Cu, has shown far greater success and therefore is popular. That said, for electronics applications it requires a transfer procedure, which tends to damage and contaminate the graphene. Thus, the direct fabrication of uniform graphene on Si/SiOx remains attractive. Here we show a facile confinement CVD approach in which we simply "sandwich" two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises faceted grains despite initially nucleating as round islands. Upon clustering, they facet to minimize their energy. This behavior leads to faceting in polygons, as the system aims to ideally form hexagons, the lowest energy form, much like the hexagonal cells in a beehive, which requires the minimum wax. This process also leads to a near minimal total grain boundary length per unit area. This fact, along with the high graphene quality, is reflected in its electrical performance, which is highly comparable with graphene formed over other substrates, including Cu. In addition, the graphene growth is self-terminating. Our CVD approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates, which suffer from transfer. Moreover, this CVD route should be applicable for the direct synthesis of other 2D materials and their van der Waals heterostructures.
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Affiliation(s)
- Jinbo Pang
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
| | - Rafael G Mendes
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
| | - Pawel S Wrobel
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
| | - Michal D Wlodarski
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
| | - Huy Quang Ta
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
| | | | - Lars Giebeler
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
| | - Barbara Trzebicka
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
| | - Thomas Gemming
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
| | - Lei Fu
- College of Chemistry and Molecular Science, Wuhan University , Wuhan, 430072, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China
| | - Juergen Eckert
- Erich Schmid Institute of Materials Science, Austrian Academy of Sciences , Jahnstraße 12, A-8700 Leoben, Austria
- Department Materials Physics, Montanuniversität Leoben , Jahnstraße 12, A-8700 Leoben, Austria
| | - Alicja Bachmatiuk
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
| | - Mark H Rümmeli
- IFW-Dresden , Helmholtz Strasse 20, D-01171 Dresden, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , ul. M. Curie-Sklodowskiej 34, Zabrze, PL-41-819 Zabrze, Poland
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