Pressure-induced phase transition in hydrothermally grown ZnO nanoflowers investigated by Raman and photoluminescence spectroscopy

Redistribution of native defects and photoconductivity in ZnO under pressure

Control and design of native defects in semiconductors are extremely important for industrial applications. Here, we investigated the effect of external hydrostatic pressure on the redistribution of native defects and their impact on structural phase transitions and photoconductivity in ZnO. We investigated morphologically distinct rod- (ZnO-R) and flower-like (ZnO-F) ZnO microstructures where the latter contains several native defects namely, oxygen vacancies, zinc interstitials and oxygen interstitials. Synchrotron X-ray diffraction reveals pressure-induced irreversible phase transformation of ZnO-F with the emergence of a hexagonal metallic Zn phase due to enhanced diffusion of interstitial Zn during decompression. In contrast, ZnO-R undergoes a reversible structural phase transition displaying a large hysteresis during decompression. We evidenced that the pressure-induced strain and inhomogeneous distribution of defects play crucial roles at structural phase transition. Raman spectroscopy and emission studies further confirm that the recovered ZnO-R appears less defective than ZnO-F. It resulted in lower photocurrent gain and slower photoresponse during time-dependent transient photoresponse with the synergistic application of pressure and illumination (ultra-violet). While successive pressure treatments improved the photoconductivity in ZnO-R, ZnO-F failed to recover even its ambient photoresponse. Pressure-induced redistribution of native defects and the optoelectronic response in ZnO might provide new opportunities in promising semiconductors.

Reciprocating Compression of ZnO Probed by X-ray Diffraction: The Size Effect on Structural Properties under High Pressure

Zinc oxide, ZnO, an important technologically relevant binary compound, was investigated by reciprocating compress the sample in a diamond anvil cell using in situ high-pressure synchrotron X-ray diffraction at room temperature. The starting sample (∼200 nm) was compressed to 20 GPa and then decompressed to ambient condition. The quenched sample, with average grain size ∼10 nm, was recompressed to 20 GPa and then released to ambient condition. The structural stability and compressibility of the initial bulk ZnO and quenched nano ZnO were compared. Results reveal that the grain size and the fractional cell distortion have little effect on the structural stability of ZnO. The bulk modulus of the B4 (hexagonal wurtzites structure) and B1 (cubic rock salt structure) phases for bulk ZnO under hydrostatic compression were estimated as 164(3) and 201(2) GPa, respectively. Importantly, the effect of pressure in atomic positions, bond distances, and bond angles was obtained. On the basis of this information, the B4-to-B1 phase transformation was demonstrated to follow the hexagonal path rather than the tetragonal path. For the first time, the detail of the intermediate hexagonal ZnO, revealing the B4-to-B1 transition mechanism, was detected by experimental method. These findings enrich our knowledge on the diversity of the size influences on the high-pressure behaviors of materials and offer new insights into the mechanism of the B4-to-B1 phase transition that is commonly observed in many other wurzite semiconductor compounds.