Theoretical tools for the description of charge transport in disordered organic semiconductors

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly varies and undulates in space across the entire system. Thus, transport is envisioned as being dominated by percolation physics as carriers traverse this varying band-edge landscape of "hills" and "valleys". It is then something of a missed opportunity to model such a system using only a compact approach-despite this being the primary focus of the existing literature-as such a system can easily be faithfully reproduced as a true microscopic TCAD model with a real physically varying potential. Thus, in this work, we develop such a "microscopic" TCAD model of a-IGZO and detail a number of key aspects of its implementation. We then demonstrate that it can accurately reproduce experimental results and consider the issue of the addition of non-conducting band-tail states in a numerically efficient manner. Finally, two short studies of 3D effects are undertaken to illustrate the utility of the model: specifically, the cases of variation effects as a function of device size and as a function of surface roughness scattering.

Efficient calculation of electronic coupling integrals with the dimer projection method via a density matrix tight-binding potential

Designing organic semiconductors for practical applications in organic solar cells, organic field-effect transistors, and organic light-emitting diodes requires understanding charge transfer mechanisms across different length and time scales. The underlying electron transfer mechanisms can be efficiently explored using semiempirical quantum mechanical (SQM) methods. The dimer projection (DIPRO) method combined with the recently introduced non-self-consistent density matrix tight-binding potential (PTB) [Grimme et al., J. Chem. Phys. 158, 124111 (2023)] is used in this study to evaluate charge transfer integrals important for understanding charge transport mechanisms. PTB, parameterized for the entire Periodic Table up to Z = 86, incorporates approximate non-local exchange, allowing for efficient and accurate calculations for large hetero-organic compounds. Benchmarking against established databases, such as Blumberger's HAB sets, or our newly introduced JAB69 set and comparing with high-level reference data from ωB97X-D4 calculations confirm that DIPRO@PTB consistently performs well among the tested SQM approaches for calculating coupling integrals. DIPRO@PTB yields reasonably accurate results at low computational cost, making it suitable for screening purposes and applications to large systems, such as metal-organic frameworks and cyanine-based molecular aggregates further discussed in this work.

Power-Law Density of States in Organic Solar Cells Revealed by the Open-Circuit Voltage Dependence of the Ideality Factor

The density of states (DOS) is fundamentally important for understanding physical processes in organic disordered semiconductors, yet hard to determine experimentally. We evaluated the DOS by considering recombination via tail states and using the temperature and open-circuit voltage (V_{oc}) dependence of the ideality factor. By performing Suns-V_{oc} measurements, we find that the energetic disorder increases deeper into the band gap, which is not expected for a Gaussian or exponential DOS. The linear dependence of the disorder on energy reveals the power-law DOS in organic solar cells.

Organic Disordered Semiconductors as Networks Embedded in Space and Energy

Organic disordered semiconductors have a growing importance because of their low cost, mechanical flexibility, and multiple applications in thermoelectric devices, biosensors, and optoelectronic devices. Carrier transport consists of variable-range hopping between localized quantum states, which are disordered in both space and energy within the Gaussian disorder model. In this paper, we model an organic disordered semiconductor system as a network embedded in both space and energy so that a node represents a localized state while a link encodes the probability (or, equivalently, the Miller-Abrahams hopping rate) for carriers to hop between nodes. The associated network Laplacian matrix allows for the study of carrier dynamics using edge-centric random walks, in which links are activated by the corresponding carrier hopping rates. Our simulation work suggests that at room temperature the network exhibits a strong propensity for small-network nature, a beneficial property that in network science is related to the ease of exchanging information, particles, or energy in many different systems. However, this is not the case at low temperature. Our analysis suggests that there could be a parallelism between the well-known dependence of carrier mobility on temperature and the potential emergence of the small-world property with increasing temperature.

Recent Progress in Conjugated Conducting and Semiconducting Polymers for Energy Devices

Advanced conductors (such as conducting and semiconducting polymers) are vital building blocks for modern technologies and biocompatible devices as faster computing and smaller device sizes are demanded. Conjugated conducting and semiconducting polymers (including poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), polythiophene (PTh), and polypyrrole (PPy)) provide the mechanical flexibility required for the next generation of energy and electronic devices. Electrical conductivity, ionic conductivity, and optoelectronic characteristics of advanced conductors are governed by their texture and constituent nanostructures. Thus, precise textural and nanostructural engineering of advanced conjugated conducting and semiconducting polymers provide an outstanding pathway to facilitate their adoption in various technological applications, including but not limited to energy storage and harvesting devices, flexible optoelectronics, bio-functional materials, and wearable electronics. This review article focuses on the basic interconnection among the nanostructure and the characteristics of conjugated conducting and semiconducting polymers. In addition, the application of conjugated conducting and semiconducting polymers in flexible energy devices and the resulting state-of-the-art device performance will be covered.

Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in agreement with calculations of tunneling conductance through asymmetric barriers. We fabricate a GNR heterojunctions based sensor and demonstrate greatly improved sensitivity to adsorbates compared to graphene based sensors. This is achieved via modulation of the GNR heterojunction tunneling barriers by adsorbates.

Hole Transport in Low-Donor-Content Organic Solar Cells

Organic solar cells with an electron donor diluted in a fullerene matrix have a reduced density of donor-fullerene contacts, resulting in decreased free-carrier recombination and increased open-circuit voltages. However, the low donor concentration prevents the formation of percolation pathways for holes. Notwithstanding, high (>75%) external quantum efficiencies can be reached, suggesting an effective hole-transport mechanism. Here, we perform a systematic study of the hole mobilities of 18 donors, diluted at ∼6 mol % in C₆₀, with varying frontier energy level offsets and relaxation energies. We find that hole transport between isolated donor molecules occurs by long-range tunneling through several fullerene molecules, with the hole mobilities being correlated to the relaxation energy of the donor. The transport mechanism presented in this study is of general relevance to bulk heterojunction organic solar cells where mixed phases of fullerene containing a small fraction of a donor material or vice versa are present as well.

Introducing correlations into carrier transport simulations of disordered materials through seeded nucleation: impact on density of states, carrier mobility, and carrier statistics

Disorder in organic semiconductors has made it challenging to achieve performance gains; this is a result of the many competing and often nuanced mechanisms effecting charge transport. In this article, we attempt to illuminate one of these mechanisms in the hopes of aiding experimentalists in exceeding current performance thresholds. Using a heuristic exponential function, energetic correlation has been added to the Gaussian disorder model (GDM). The new model is grounded in the concept that energetic correlations can arise in materials without strong dipoles or dopants, but may be a result of an incomplete crystal formation process. The proposed correlation has been used to explain the exponential tail states often observed in these materials; it is also better able to capture the carrier mobility field dependence, commonly known as the Poole-Frenkel dependence, when compared to the GDM. Investigation of simulated current transients shows that the exponential tail states do not necessitate Montroll and Scher fits. Montroll and Scher fits occur in the form of two distinct power law curves that share a common constant in their exponent; they are clearly observed as linear lines when the current transient is plotted using a log-log scale. Typically, these fits have been found appropriate for describing amorphous silicon and other disordered materials which display exponential tail states. Furthermore, we observe the proposed correlation function leads to domains of energetically similar sites separated by boundaries where the site energies exhibit stochastic deviation. These boundary sites are found to be the source of the extended exponential tail states, and are responsible for high charge visitation frequency, which may be associated with the molecular turnover number and ultimately the material stability.

Organic Optoelectronic Materials: Mechanisms and Applications

Organic (opto)electronic materials have received considerable attention due to their applications in thin-film-transistors, light-emitting diodes, solar cells, sensors, photorefractive devices, and many others. The technological promises include low cost of these materials and the possibility of their room-temperature deposition from solution on large-area and/or flexible substrates. The article reviews the current understanding of the physical mechanisms that determine the (opto)electronic properties of high-performance organic materials. The focus of the review is on photoinduced processes and on electronic properties important for optoelectronic applications relying on charge carrier photogeneration. Additionally, it highlights the capabilities of various experimental techniques for characterization of these materials, summarizes top-of-the-line device performance, and outlines recent trends in the further development of the field. The properties of materials based both on small molecules and on conjugated polymers are considered, and their applications in organic solar cells, photodetectors, and photorefractive devices are discussed.