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Wang J, Liu K, Jin S, Jiang L, Liang P. A Review of Chinese Raman Spectroscopy Research Over the Past Twenty Years. APPLIED SPECTROSCOPY 2020; 74:130-159. [PMID: 30646745 DOI: 10.1177/0003702819828360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
This paper introduces the major Chinese research groups in the fields of biomedicine, food safety, environmental testing, material research, archaeological and cultural relics, gem identification, forensic science, and other research areas of Raman spectroscopy and combined methods spanning the two decades from 1997 to 2017. Briefly summarized are the research directions and contents of the major Chinese Raman spectroscopy research groups, giving researchers engaged in Raman spectroscopy research a more comprehensive understanding of the state of Chinese Raman spectroscopy research and future development trends to further develop Raman spectroscopy and its applications.
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Affiliation(s)
- Jie Wang
- Department of Optical and Electronic Technology, China Jiliang University, China
| | - Kaiyuan Liu
- Department of Optical and Electronic Technology, China Jiliang University, China
| | - Shangzhong Jin
- Department of Optical and Electronic Technology, China Jiliang University, China
| | - Li Jiang
- Department of Optical and Electronic Technology, China Jiliang University, China
| | - Pei Liang
- Department of Optical and Electronic Technology, China Jiliang University, China
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Park H, Larrabee TJ, Ruppalt LB, Culbertson JC, Prokes SM. Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition. ACS OMEGA 2017; 2:1259-1264. [PMID: 31457501 PMCID: PMC6640919 DOI: 10.1021/acsomega.7b00059] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2017] [Accepted: 03/09/2017] [Indexed: 05/16/2023]
Abstract
In this study, a plasma-modified process was developed to control the electrical properties of atomic layer deposition (ALD)-grown vanadium dioxide (VO2), which is potentially useful for applications such as resistive switching devices, bolometers, and plasmonic metamaterials. By inserting a plasma pulse with varying H2 gas flow into each ALD cycle, the insulator-to-metal transition (IMT) temperature of postdeposition-annealed crystalline VO2 films was adjusted from 63 to 78 °C. Film analyses indicate that the tunability may arise from changes in grain boundaries, morphology, and compositional variation despite hydrogen not remaining in the annealed VO2 films. This growth method, which enables a systematic variation of the electronic behavior of VO2, provides capabilities beyond those of the conventional thermal ALD and plasma-enhanced ALD.
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Affiliation(s)
- Helen
Hejin Park
- Electronics
Science and Technology Division, U.S. Naval
Research Laboratory (NRL), 4555 Overlook Avenue, SW, Washington, District of Columbia 20375, United States
- American
Society for Engineering Education (ASEE) Postdoctoral Fellow at NRL, 4555 Overlook Avenue, SW, Washington, District of Columbia 20375, United States
| | - Thomas J. Larrabee
- Electronics
Science and Technology Division, U.S. Naval
Research Laboratory (NRL), 4555 Overlook Avenue, SW, Washington, District of Columbia 20375, United States
- Sotera
Defense Solutions, 2121
Cooperative Way, Suite 400, Herndon, Virginia 20171, United
States
| | - Laura B. Ruppalt
- Electronics
Science and Technology Division, U.S. Naval
Research Laboratory (NRL), 4555 Overlook Avenue, SW, Washington, District of Columbia 20375, United States
| | - James C. Culbertson
- Electronics
Science and Technology Division, U.S. Naval
Research Laboratory (NRL), 4555 Overlook Avenue, SW, Washington, District of Columbia 20375, United States
| | - S. M. Prokes
- Electronics
Science and Technology Division, U.S. Naval
Research Laboratory (NRL), 4555 Overlook Avenue, SW, Washington, District of Columbia 20375, United States
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