2D transition-metal diselenides: phase segregation, electronic structure, and magnetism

Inducing Half-Metallicity in Monolayer MoSi2N4

First-principles calculations are performed for the recently synthesized monolayer MoSi₂N₄ [Science 369, 670-674 (2020)]. We show that N vacancies are energetically favorable over Si vacancies, except for Fermi energies close to the conduction band edge in the N-rich environment, and induce half-metallicity. N and Si vacancies generate magnetic moments of 1.0 and 2.0 μ_B, respectively, with potential applications in spintronics. We also demonstrate that N and Si vacancies can be used to effectively engineer the work function.

Molecular Beam Epitaxy of Two-Dimensional Vanadium-Molybdenum Diselenide Alloys

Two-dimensional (2D) alloys represent a versatile platform that extends the properties of atomically thin transition-metal dichalcogenides. Here, using molecular beam epitaxy, we investigate the growth of 2D vanadium-molybdenum diselenide alloys, V_xMo_1-xSe₂, on highly oriented pyrolytic graphite and unveil their structural, chemical, and electronic integrities via measurements by scanning tunneling microscopy/spectroscopy, synchrotron X-ray photoemission, and X-ray absorption spectroscopy (XAS). Essentially, we found a critical value of x = ∼0.44, below which phase separation occurs and above which a homogeneous metallic phase is favored. Another observation is an effective increase in the density of mirror twin boundaries of constituting MoSe₂ in the low V concentration regime (x ≤ 0.05). Density functional theory calculations support our experimental results on the thermal stability of 2D V_xMo_1-xSe₂ alloys and suggest an H phase of the homogeneous alloys with alternating parallel V and Mo strips randomly in-plane stacked. Element-specific XAS of the 2D alloys, which clearly indicates quenched atomic multiplets similar to the case of 2H-VSe₂, provides strong evidence for the H phase of the 2D alloys. This work provides a comprehensive understanding of the thermal stability, chemical state, and electronic structure of 2D V_xMo_1-xSe₂ alloys, useful for the future design of 2D electronic devices.

Epitaxially grown monolayer VSe2: an air-stable magnetic two-dimensional material with low work function at edges

Recent experimental breakthroughs open up new opportunities for magnetism in few-atomic-layer two-dimensional (2D) materials, which makes fabrication of new magnetic 2D materials a fascinating issue. Here, we report the growth of monolayer VSe₂ by molecular beam epitaxy (MBE) method. Electronic properties measurements by scanning tunneling spectroscopy (STS) method revealed that the as-grown monolayer VSe₂ has magnetic characteristic peaks in its electronic density of states and a lower work-function at its edges. Moreover, air exposure experiments show air-stability of the monolayer VSe₂. This high-quality monolayer VSe₂, a very air-inert 2D material with magnetism and low edge work function, is promising for applications in developing next-generation low power-consumption, high efficiency spintronic devices and new electrocatalysts.

Giant Valley Splitting and Valley Polarized Plasmonics in Group V Transition-Metal Dichalcogenide Monolayers

Two-dimensional group VI transition-metal dichalcogenides (TMDs) provide a promising platform to encode and manipulate quantum information in the valleytronics. However, the two valleys are energetically degenerate, protected by time-reversal symmetry (TRS). To lift this degeneracy, one needs to break the TRS by either applying an external magnetic field or using a magnetic rare-earth oxide substrate. Here, we predict a different strategy to achieve this goal. We propose that the ferromagnetic group V TMD monolayer, in which the TRS is intrinsically broken, can produce a larger valley and spin splitting. A polarized ZnS(0001) surface is also used as a substrate, which shifts the valleys to the low-energy regime (near the Fermi level). Moreover, by calculating its collective electronic excitation behaviors, we show that such a system hosts a giant valley polarized terahertz plasmonics. Our results demonstrate a new way to design and use valleytronic devices, which are both fundamentally and technologically significant.

Magnetically Ordered Transition-Metal-Intercalated WSe2

Introducing magnetic behavior in nonmagnetic transition metal dichalcogenides is essential to broaden their applications in spintronic and nanomagnetic devices. In this article, we investigate the electronic and magnetic properties of transition-metal-intercalated tungsten diselenide (WSe₂) using density functional theory. We find that intercalation compounds with composition of T_1/4WSe₂ (T is an iron-series transition-metal atom) exhibit substantial magnetic moments and pronounced ferromagnetic order for late transition metals. The densities of states of the T atoms and the magnetic moments on the W sites indicate that the moments of the intercalated atoms become more localized with increasing atomic number. A large perpendicular magnetocrystalline anisotropy of about 9 meV per supercell has been found for Fe_1/4WSe₂. Furthermore, using mean field theory, we estimated high Curie temperatures of 660, 475, and 379 K for Cr, Mn, and Fe, respectively. The predicted magnetic properties suggest that WSe₂ may have applications in spin electronics and nanomagnetic devices.

Concepts of ferrovalley material and anomalous valley Hall effect

Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage, as well as electronic, magnetic and optical switches. In analogy to ferroelectric materials with spontaneous charge polarization, or ferromagnetic materials with spontaneous spin polarization, here we introduce a new member of ferroic family, that is, a ferrovalley material with spontaneous valley polarization. Combining a two-band k·p model with first-principles calculations, we show that 2H-VSe2 monolayer, where the spin-orbit coupling coexists with the intrinsic exchange interaction of transition-metal d electrons, is such a room-temperature ferrovalley material. We further predict that such system could demonstrate many distinctive properties, for example, chirality-dependent optical band gap and, more interestingly, anomalous valley Hall effect. On account of the latter, functional devices based on ferrovalley materials, such as valley-based nonvolatile random access memory and valley filter, are contemplated for valleytronic applications.