Non-volatile memory devices with redox-active diruthenium molecular compound

Bisaryl and Bisalkynyl Diruthenium (III,III) Compounds Based on an Electron-Deficient Building Block

Reported herein is a new series of diruthenium(III,III) bisalkynyl and bisaryl diruthenium(III,III) compounds supported with 2-amino-3-(trifluoromethyl)pyridinate (amtfmp). Using Ru₂(amtfmp)₄Cl₂ from a modified preparation, cis 2:2 Ru₂(amtfmp)₄(C≡CPh)₂ (1), cis 2:2 Ru₂(amtfmp)₄(Ph)₂ (2), and 3:1 Ru₂(amtfmp)₄(Ph)₂ (3) were synthesized via a lithium-halogen exchange reaction using LiC₂Ph and LiPh, respectively. Compounds 1-3 are all Ru₂(III,III) species with a ground-state configuration of π⁴δ²(π*)⁴ (S = 0) and were characterized via mass spectrometry, electron absorption and ¹H/¹⁹F NMR spectroscopies, and voltammetry. The molecular structures of 1-3 were established using single-crystal X-ray diffraction analysis, and preliminary density functional theory analysis was performed to elaborate the electronic structures of 1 and 2. Comparisons of the electrochemical properties of 1-3 against the Ru₂(amtfmp)₄Cl₂ starting material reveal cathodic shifts of the Ru₂^7+/6+ oxidation and the Ru₂^6+/5+ and Ru₂^5+/4+ reduction potentials. In comparison to related Ru₂(III,III) bisalkynyl and bisaryl compounds, the electrode potentials for 1-3 are anodically shifted up to ca. 0.95 V, highlighting the strong electron-withdrawing nature of the amtfmp ligand.

Electronic Structure of Ru26+ Complexes with Electron-Rich Anilinopyridinate Ligands

Diruthenium paddlewheel complexes supported by electron-rich anilinopyridinate (Xap) ligands were synthesized in the course of the first in-depth structural and spectroscopic interrogation of monocationic [Ru₂(Xap)₄Cl]⁺ species in the Ru₂⁶⁺ oxidation state. Despite paramagnetism of the compounds, ¹H NMR spectroscopy proved highly informative for determining the isomerism of the Ru₂⁵⁺ and Ru₂⁶⁺ compounds. While most compounds are found to have the polar (4,0) geometry, with all four Xap ligands in the same orientation, some synthetic procedures resulted in a mixture of (4,0) and (3,1) isomers, most notably in the case of the parent compound Ru₂(ap)₄Cl. The isomerism of this compound has been overlooked in previous reports. Electrochemical studies demonstrate that oxidation potentials can be tuned by the installation of electron donating groups to the ligands, increasing accessibility of the Ru₂⁶⁺ oxidation state. The resulting Ru₂⁶⁺ monocations were found to have the expected (π*)² ground state, and an in-depth study of the electronic transitions by Vis/NIR absorption and MCD spectroscopies with the aid of TD-DFT allowed for the assignment of the electronic spectra. The empty δ* orbital is the major acceptor orbital for the most prominent electronic transitions. Both Ru₂⁵⁺ and Ru₂⁶⁺ compounds were studied by Ru K-edge X-ray absorption spectroscopy; however, the rising edge energy is insensitive to redox changes in the compounds due to the broad line shape observed for 4d transition metal K-edges. DFT calculations indicate the presence of ligand orbitals at the frontier level, suggesting that further oxidation beyond Ru₂⁶⁺ will be ligand-centered rather than metal-centered.

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (ΔVth) of 13.7 V when it sweeps from -20 V to +20 V back and forth. Additionally, the material characteristics of the monolayer AuNPs (floating gate layer) and IGZO film (semiconductor layer) are confirmed using transmission electronic microscopy (TEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) techniques. The memory operations in terms of endurance and retention are obtained, revealing highly stable endurance properties of the device up to 100 P/E cycles by applying pulses (±20 V, duration of 100 ms) and reliable retention time up to 104 s. The proposed NVM device, owing to the properties of large memory window, stable endurance, and high retention time, enables an excellent approach in futuristic non-volatile memory technology.

Experimental Validation of Quantum Circuit Rules in Molecular Junctions

A series of diarylacetylene (tolane) derivatives functionalised at the 4- and 4′-positions by thiolate, thioether, or amine groups capable of serving as anchor groups to secure the molecules within a molecular junction have been prepared and characterised. The series of compounds have a general form X-B-X, Y-B-Y, and X-B-Y where X and Y represent anchor groups and B the molecular bridge. The single-molecule conductance values determined by the scanning tunnelling microscope break-junction method are found to be in excellent agreement with the predictions made on the basis of a recently proposed ‘molecular circuit law’, which states ‘the conductance of an asymmetric molecule X-B-Y is the geometric mean of the conductance of the two symmetric molecules derived from it, and .’ The experimental verification of the circuit law, which holds for systems in which the constituent moieties X, B, and Y are weakly coupled and whose conductance takes place via off-resonance tunnelling, gives further confidence in the use of this relationship in the design of future compounds for use in molecular electronics research.

Interface Engineering for Nanoelectronics

Innovation in the electronics industry is tied to interface engineering as devices increasingly incorporate new materials and shrink. Molecular layers offer a versatile means of tuning interfacial electronic, chemical, physical, and magnetic properties enabled by a wide variety of molecules available. This paper will describe three instances where we manipulate molecular interfaces with a specific focus on the nanometer scale characterization and the impact on the resulting performance. The three primary themes include, 1-designer interfaces, 2-electronic junction formation, and 3-advancing metrology for nanoelectronics. We show the ability to engineer interfaces through a variety of techniques and demonstrate the impact on technologies such as molecular memory and spin injection for organic electronics. Underpinning the successful modification of interfaces is the ability to accurately characterize the chemical and electronic properties and we will highlight some measurement advances key to our understanding of the interface engineering for nanoelectronics.