The effects of contacts and ambipolar electrical transport in nitrogen doped multiwall carbon nanotubes

Direct curvature measurement of the compartments in bamboo-shaped multi-walled carbon nanotubes via scanning probe microscopy

Bamboo-shaped multi-walled carbon nanotubes (BS-MWCNTs) have compartmented structures inherently obtained during their catalytic growth, and the curvature of the compartmented structure is known to be determined by the morphology of the metal catalysts. In this study, the inside curvature of the BS-MWCNTs was directly measured through scanning probe microscopy (SPM). The surface of the compartment structures of BS-MWCNTs has discontinuous graphene layers and different frictional force levels depending on the curvature direction. That of the inside curvature can be directly observed through tribological analysis by adding and subtracting the lateral force microscopy images obtained on opposite sides along the axial direction of the BS-MWCNT (diameter of 500 nm). This tells us the direction of the inside curvature of the BS-MWCNT, which was also confirmed by identifying the growth direction of the BS-MWCNTs via scanning electron microscopy. Our demonstration implies that SPM can give the same insight into the structural characterization of nanomaterials that is relatively inexpensive and more user-friendly than currently used methods.

Facile synthesis of nitrogen-doped unzipped carbon nanotubes and their electrochemical properties

N-UCNTs with a high nitrogen level, large surface areas and good crystallinity are synthesized by pyrolysis of an O-UCNTs/melamine composite.

Role of metal contacts in high-performance phototransistors based on WSe2 monolayers

Phototransistors based on monolayer transition metal dichalcogenides (TMD) have high photosensitivity due to their direct band gap transition. However, there is a lack of understanding of the effect of metal contacts on the performance of atomically thin TMD phototransistors. Here, we fabricate phototransistors based on large-area chemical vapor deposition (CVD) tungsten diselenide (WSe2) monolayers contacted with the metals of different work function values. We found that the low Schottky-contact WSe2 phototransistors exhibit a very high photo gain (10(5)) and specific detectivity (10(14)Jones), values higher than commercial Si- and InGaAs-based photodetectors; however, the response speed is longer than 5 s in ambient air. In contrast, the high Schottky-contact phototransistors display a fast response time shorter than 23 ms, but the photo gain and specific detectivity decrease by several orders of magnitude. Moreover, the fast response speed of the high Schottky-contact devices is maintained for a few months in ambient air. This study demonstrates that the contact plays an important role in TMD phototransistors, and barrier height tuning is critical for optimizing the photoresponse and photoresponsivity.

Enhanced electrical conductivities of N-doped carbon nanotubes by controlled heat treatment

The thermal stability of nitrogen (N) functionalities on the sidewalls of N-doped multi-walled carbon nanotubes was investigated at temperatures ranging between 1000 °C and 2000 °C. The structural stability of the doped tubes was then correlated with the electrical conductivity both at the bulk and at the individual tube levels. When as-grown tubes were thermally treated at 1000 °C, we observed a very significant decrease in the electrical resistance of the individual nanotubes, from 54 kΩ to 0.5 kΩ, which is attributed to a low N doping level (e.g. 0.78 at% N). We noted that pyridine-type N was first decomposed whereas the substitutional N was stable up to 1500 °C. For nanotubes heat treated to 1800 °C and 2000 °C, the tubes exhibited an improved degree of crystallinity which was confirmed by both the low R value (I(D)/I(G)) in the Raman spectra and the presence of straight graphitic planes observed in TEM images. However, N atoms were not detected in these tubes and caused an increase in their electrical resistivity and resistance. These partially annealed doped tubes with enhanced electrical conductivities could be used in the fabrication of robust and electrically conducting composites, and these results could be extrapolated to N-doped graphene and other nanocarbons.

Influence of a nanorod molecular layer on the biological activity of neuronal cells. A semiclassical model for complex solid/liquid interfaces with carbon nanotubes

A general account of electric effects is given for a biological phase interacting with a nanorod molecular layer by means of the formed hard-soft and solid-liquid interfaces. In particular, the frequency enhancement previously detected for the spontaneous activity of neuronal cultures interfaced with carbon nanotubes is quantitatively explained upon a quantum/semiclassical description, where the duration of a biological signal is viewed as the (average) lifetime of a decaying state (or population of states), and the effect of the carbon phase as a linewidth broadening. Four contributions were principally accounted for, one biological, for the synaptic strength, one electrochemical, for the overall capacitance increase implied by the nanotube double layers, one geometric, for the typical scales ruling the electron and ion conduction mechanisms, and one electromagnetic-like, translating the membrane polarization changes. These calculations predict an enhancement factor equal on average to ≃6.39, against a former experimental value ≃6.08.

Giant persistent photoconductivity in rough silicon nanomembranes

This paper reports the observation of giant persistent photoconductivity from rough Si nanomembranes. When exposed to light, the current in p-type Si nanomembranes is enhanced by roughly 3 orders of magnitude in comparison with that in the dark and can persist for days at a high conductive state after the light is switched off. An applied gate voltage can tune the persistent photocurrent and accelerate the response to light. By analyzing the band structure of the devices and the surfaces through various coatings, we attribute the observed effect to hole-localized regions in Si nanomembranes due to the rough surfaces, where light can activate the confined holes.