Low temperature Ga surface diffusion from focused ion beam milled grooves

Van der Waals Heterostructures With Built-In Mie Resonances For Polarization-Sensitive Photodetection

Few-layer transition metal dichalcogenides (TMDs) and their combination as van der Waals heterostructures provide a promising platform for high-performance optoelectronic devices. However, the ultrathin thickness of TMD flakes limits efficient light trapping and absorption, which triggers the hybrid construction with optical resonant cavities for enhanced light absorption. The optical structure enriched photodetectors can also be wavelength- and polarization-sensitive but require complicated fabrication. Herein, a new-type TMD-based photodetector embedded with nanoslits is proposed to enhance light trapping. Taking ReS₂ as an example, strong anisotropic Mie-type optical responses arising from the intrinsic in-plane anisotropy and nanoslit-enhanced anisotropy are discovered. Owing to the nanoslit-enhanced optical resonances and band engineering, excellent photodetection performances are demonstrated with high responsivity of 27 A W^-1 and short rise/decay times of 3.7/3.7 ms. More importantly, through controlling the angle between the nanoslit orientation and the polarization direction to excite different resonant modes, polarization-sensitive photodetectors with anisotropy ratios from 5.9 to 12.6 can be achieved, representing one of the most polarization-sensitive TMD-based photodetectors. The depth and orientation of nanoslits are demonstrated crucial for optimizing the anisotropy ratio. The findings bring an effective scheme to construct high-performance and polarization-sensitive photodetectors.

Size and shape dependent few-cycle near-field dynamics of bowtie nanoantennas

Metal nanostructures can transfer electromagnetic energy from femtosecond laser pulses to the near-field down to spatial scales well below the optical diffraction limit. By combining few-femtosecond laser pulses with photoemission electron microscopy, we study the dynamics of the induced few-cycle near-field in individual bowtie nanoantennas. We investigate how the dynamics depend on antenna size and exact bowtie shape resulting from fabrication. Different dynamics are, as expected, measured for antennas of different sizes. However, we also detect comparable dynamics differences between individual antennas of similar size. With Finite-difference time-domain simulations we show that these dynamics differences between similarly sized antennas can be due to small lateral shape variations generally induced during the fabrication.

Combining focused ion beam and atomic layer deposition in nanostructure fabrication

Combining the strengths of atomic layer deposition (ALD) with focused ion beam (FIB) milling provides new opportunities for making 3D nanostructures with flexible choice of materials. Such structures are of interest in prototyping microelectronic and MEMS devices which utilize ALD grown thin films. As-milled silicon structures suffer from segregation and roughening upon heating, however. ALD processes are typically performed at 200-500 °C, which makes thermal stability of the milled structures a critical issue. In this work Si substrates were milled with different gallium ion beam incident angles and then annealed at 250 °C. The amount of implanted gallium was found to rapidly decrease with increasing incident angle with respect of surface normal, which therefore improves the thermal stability of the milled features. 60° incident angle was found as the best compromise with respect to thermal stability and ease of milling. ALD Al2O3 growth at 250 °C on the gallium FIB milled silicon was possible in all cases, even when segregation was taking place. ALD Al2O3 could be used both for creating a chemically uniform surface and for controlled narrowing of FIB milled trenches.

Taming of Ga droplets on DLC layers--size tuning and local arrangement with nanometer accuracy

A new method for the fabrication of spherical gallium nanoparticles (Ga-NPs) on diamond-like carbon (DLC) layers with high precision in their desired diameter and positioning is presented. The basic principle is the pre-patterning of a DLC film by focused Ga(+) ion beam irradiation and subsequent annealing. During thermal treatment the evolution of single Ga-NPs with spherical shape on irradiated areas is driven by phase separation and surface segregation of Ga from the supersaturated DLC layer. The shape and size of the implanted areas as well as the ion fluence serve as a Ga reservoir for the nanoparticle (NP) evolution which is strongly correlated with the NP diameter. For the formation of segregation seeds to avoid random segregation of the NPs small spots are additionally implanted with Ga within the irradiated areas. The NP evolution is then assessed with respect to the seed position and the material for the Ga-NP growth is gathered from the surrounding reservoir. Using this technique Ga-NPs were fabricated with a diameter ranging from 40 nm up to several hundred nm. Prospective applications, i.e. in the field of plasmonics, arise from the arrangement in chains as well as in periodical two-dimensional arrays with defined NP size and interparticle distance.