The fabrication and single electron transport of Au nano-particles placed between Nb nanogap electrodes

Quantum state readout of individual quantum dots by electrostatic force detection

Electric charge detection by atomic force microscopy (AFM) with single-electron resolution (e-EFM) is a promising way to investigate the electronic level structure of individual quantum dots (QDs). The oscillating AFM tip modulates the energy of the QDs, causing single electrons to tunnel between QDs and an electrode. The resulting oscillating electrostatic force changes the resonant frequency and damping of the AFM cantilever, enabling electrometry with a single-electron sensitivity. Quantitative electronic level spectroscopy is possible by sweeping the bias voltage. Charge stability diagram can be obtained by scanning the AFM tip around the QD. e-EFM technique enables to investigate individual colloidal nanoparticles and self-assembled QDs without nanoscale electrodes. e-EFM is a quantum electromechanical system where the back-action of a tunneling electron is detected by AFM; it can also be considered as a mechanical analog of admittance spectroscopy with a radio frequency resonator, which is emerging as a promising tool for quantum state readout for quantum computing. In combination with the topography imaging capability of the AFM, e-EFM is a powerful tool for investigating new nanoscale material systems which can be used as quantum bits.

In-vacuum projection of nanoparticles for on-chip tunneling spectroscopy

Starting with a discussion of the percolation problem applied to the trapping of conducting nanoparticles between nanometer-spaced electrodes, we show that a good strategy to trap a single nanoparticle between the electrodes is to prepare chips with low coverage of nanoparticles to avoid percolating current paths. To increase the probability of trapping a single nanoparticle, we developed a new method where nanoparticles are projected in-vacuum on the chip, followed by a measure of the tunnel current, in a cycle that is repeated up to a few thousand times until a preset threshold value is reached. A plot of the tunneling current as a function of time allows discriminating between the two possible current paths, i.e., a single nanoparticle trapped between the electrodes or a percolating path across many nanoparticles. We applied the method to prepare chip circuits with single gold nanoparticles, as demonstrated by the observation of Coulomb blockade. Furthermore, we applied the method to trap single magnetite nanoparticles for the study of electric-field-induced switching from insulator to metal in single nanoparticles.

Fabricating a silicon nanowire by using the proximity effect in electron beam lithography for investigation of the Coulomb blockade effect

We present an approach to fabricate a silicon nanowire relying on the proximity effect in electron beam lithography with a low acceleration voltage system by designing the exposure patterns with a rhombus sandwiched between two symmetric wedges. The reproducibility is investigated by changing the number of rhombuses. A device with a silicon nanowire is constructed on a highly doped silicon-on-insulator wafer to measure the electronic transport characteristics. Significant nonlinear behavior of current-voltage curves is observed at up to 150 K. The dependence of current on the drain voltage and back-gate voltage shows Coulomb blockade oscillations at 5.4 K, revealing a Coulomb island naturally formed in the nanowire. The mechanism of formation of the Coulomb island is discussed.