In situ transmission electron microscopy imaging of grain growth in a platinum nanobridge induced by electric current annealing

Bragg coherent diffractive imaging of single-grain defect dynamics in polycrystalline films

Polycrystalline material properties depend on the distribution and interactions of their crystalline grains. In particular, grain boundaries and defects are crucial in determining their response to external stimuli. A long-standing challenge is thus to observe individual grains, defects, and strain dynamics inside functional materials. Here we report a technique capable of revealing grain heterogeneity, including strain fields and individual dislocations, that can be used under operando conditions in reactive environments: grain Bragg coherent diffractive imaging (gBCDI). Using a polycrystalline gold thin film subjected to heating, we show how gBCDI resolves grain boundary and dislocation dynamics in individual grains in three-dimensional detail with 10-nanometer spatial and subangstrom displacement field resolution. These results pave the way for understanding polycrystalline material response under external stimuli and, ideally, engineering particular functions.

Stateful characterization of resistive switching TiO2 with electron beam induced currents

Metal oxide resistive switches are increasingly important as possible artificial synapses in next-generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam-induced current measurements as a powerful method to monitor the development of local resistive switching in TiO₂-based devices. By comparing beam energy-dependent electron beam-induced currents with Monte Carlo simulations of the energy absorption in different device layers, it is possible to deconstruct the origins of filament image formation and relate this to both morphological changes and the state of the switch. By clarifying the contrast mechanisms in electron beam-induced current microscopy, it is possible to gain new insights into the scaling of the resistive switching phenomenon and observe the formation of a current leakage region around the switching filament. Additionally, analysis of symmetric device structures reveals propagating polarization domains.

Oxide-based memristors hold promise for artificial neuromorphic computing, yet the detail of the switching mechanism—filament formation—remains largely unknown. Hoskins et al. provide nanoscale imaging of this process using electron beam induced current microscopy and relate it to resistive states.

In situ transmission electron microscopy imaging of electromigration in platinum nanowires

In situ transmission electron microscopy was performed on the electromigration in platinum (Pt) nanowires (14 nm thick, 200 nm wide, and 300 nm long) with and without feedback control. Using the feedback control mode, symmetric electrodes are obtained and the gap usually forms at the center of the Pt nanowire. Without feedback control, asymmetric electrodes are formed, and the gap can occur at any position along the wire. The three-dimensional gap geometries of the electrodes in the Pt nanowire were determined using high-angle annular dark-field scanning transmission electron microscopy; the thickness of the nanowire is reduced from 14 nm to only a few atoms at the edge with a gap of about 5-10 nm.

The use of STEM imaging to analyze thickness variations due to electromigration-induced mass transport in thin polycrystalline nanobridges

Scanning transmission electron microscopy (STEM) imaging is applied to analyze the electromigration-induced thickness variations of thin polycrystalline films. It is shown that a high angle annular dark field (HAADF) detector is required to minimize the effect of diffraction contact. A further reduction of the diffraction contrast can be obtained using a tilt series. A correlation between the intensity of the STEM signal obtained with the HAADF detector and the real thickness value was found by comparing corresponding STEM and AFM images. STEM in combination with a tilt series can determine the material distribution in polycrystalline films and can accurately analyze 1-3 nm gaps of nanoelectrodes formed by electromigration.

Controllable atomic scale patterning of freestanding monolayer graphene at elevated temperature

We show that by operating a scanning transmission electron microscope (STEM) with a 0.1 nm 300 kV electron beam, one can sculpt free-standing monolayer graphene with close-to-atomic precision at 600 °C. The same electron beam that is used for destructive sculpting can be used to image the sculpted monolayer graphene nondestructively. For imaging, a scanning dwell time is used that is about 1000 times shorter than for the sculpting. This approach allows for instantaneous switching between sculpting and imaging and thus fine-tuning the shape of the sculpted lattice. Furthermore, the sculpting process can be automated using a script. In this way, free-standing monolayer graphene can be controllably sculpted into patterns that are predefined in position, size, and orientation while maintaining defect-free crystallinity of the adjacent lattice. The sculpting and imaging processes can be fully computer-controlled to fabricate complex assemblies of ribbons or other shapes.

Unsymmetrical hot electron heating in quasi-ballistic nanocontacts

Electrons are allowed to pass through a single atom connected to two electrodes without being scattered as the characteristic size is much smaller than the inelastic mean free path. In this quasi-ballistic regime, it is difficult to predict where and how power dissipation occurs in such current-carrying atomic system. Here, we report direct assessment of electrical heating in a metallic nanocontact. We find asymmetric electrical heating effects in the essentially symmetric single-atom contact. We simultaneously identified the voltage polarity independent onset of the local heating by conducting the inelastic noise spectroscopy. As a result, we revealed significant heat dissipation by hot electrons transmitting ballistically through the junction that creates a hot spot at the current downstream. This technique can be used as a platform for studying heat dissipation and transport in atomic/molecular systems.