1
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Shin DH, You YG, Jo SI, Jeong GH, Campbell EEB, Chung HJ, Jhang SH. Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS 2 Barristors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3820. [PMID: 36364596 PMCID: PMC9658580 DOI: 10.3390/nano12213820] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 10/24/2022] [Accepted: 10/25/2022] [Indexed: 06/16/2023]
Abstract
The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS2 barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.
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Affiliation(s)
- Dong-Ho Shin
- School of Physics, Konkuk University, Seoul 05029, Korea
| | - Young Gyu You
- School of Physics, Konkuk University, Seoul 05029, Korea
| | - Sung Il Jo
- Department of Advanced Materials Science and Engineering, Kangwon National University, Chuncheon 24341, Korea
| | - Goo-Hwan Jeong
- Department of Advanced Materials Science and Engineering, Kangwon National University, Chuncheon 24341, Korea
| | - Eleanor E. B. Campbell
- EaStCHEM, School of Chemistry, Edinburgh University, David Brewster Road, Edinburgh EH9 3FJ, UK
- Department of Physics, Ehwa Womans University, Seoul 03760, Korea
| | | | - Sung Ho Jhang
- School of Physics, Konkuk University, Seoul 05029, Korea
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2
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Shin Y, Kwon J, Jeong Y, Watanabe K, Taniguchi T, Im S, Lee GH. Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200882. [PMID: 35719033 DOI: 10.1002/smll.202200882] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2022] [Revised: 06/02/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) devices and their van der Waals (vdW) heterostructures attract considerable attention owing to their potential for next-generation logic and memory applications. In addition, 2D devices are projected to have high integration capabilities, while maintaining nanoscale thickness. However, the fabrication of 2D devices and their circuits is challenging because of the high precision required to etch and pattern ultrathin 2D materials for integration. Here, the fabrication of a graphene via contact architecture to electrically connect graphene electrodes (or leads) embedded in vdW heterostructures is demonstrated. Graphene via contacts comprising of edge and fluorinated graphene (FG) electrodes are fabricated by successive fluorination and plasma etching processes. A one-step fabrication process that utilizes the graphene contacts is developed for a vertically integrated complementary inverter based on n- and p-type 2D field-effect transistors (FETs). This study provides a promising method to fabricate vertically integrated 2D devices, which are essential in 2D material-based devices and circuits.
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Affiliation(s)
- Yongjun Shin
- Department of Materials Science and Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Junyoung Kwon
- Department of Materials Science and Engineering, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Yeonsu Jeong
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki, 305-0044, Japan
| | - Seongil Im
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
- Research Institute of Advanced Materials (RIAM), Institute of Engineering Research, Institute of Applied Physics, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
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3
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Woo G, Yoo H, Kim T. Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation. MEMBRANES 2021; 11:membranes11120931. [PMID: 34940431 PMCID: PMC8709032 DOI: 10.3390/membranes11120931] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Revised: 11/16/2021] [Accepted: 11/22/2021] [Indexed: 12/29/2022]
Abstract
Beyond conventional silicon, emerging semiconductor materials have been actively investigated for the development of integrated circuits (ICs). Considerable effort has been put into implementing complementary circuits using non-silicon emerging materials, such as organic semiconductors, carbon nanotubes, metal oxides, transition metal dichalcogenides, and perovskites. Whereas shortcomings of each candidate semiconductor limit the development of complementary ICs, an approach of hybrid materials is considered as a new solution to the complementary integration process. This article revisits recent advances in hybrid-material combination-based complementary circuits. This review summarizes the strong and weak points of the respective candidates, focusing on their complementary circuit integrations. We also discuss the opportunities and challenges presented by the prospect of hybrid integration.
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Affiliation(s)
- Gunhoo Woo
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon 16419, Korea;
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea
- Correspondence: (H.Y.); (T.K.)
| | - Taesung Kim
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon 16419, Korea;
- Department of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Korea
- Correspondence: (H.Y.); (T.K.)
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4
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Shulga AG, Derenskyi V, Salazar-Rios JM, Dirin DN, Fritsch M, Kovalenko MV, Scherf U, Loi MA. An All-Solution-Based Hybrid CMOS-Like Quantum Dot/Carbon Nanotube Inverter. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1701764. [PMID: 28714202 DOI: 10.1002/adma.201701764] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2017] [Revised: 05/15/2017] [Indexed: 05/20/2023]
Abstract
The development of low-cost, flexible electronic devices is subordinated to the advancement in solution-based and low-temperature-processable semiconducting materials, such as colloidal quantum dots (QDs) and single-walled carbon nanotubes (SWCNTs). Here, excellent compatibility of QDs and SWCNTs as a complementary pair of semiconducting materials for fabrication of high-performance complementary metal-oxide-semiconductor (CMOS)-like inverters is demonstrated. The n-type field effect transistors (FETs) based on I- capped PbS QDs (Vth = 0.2 V, on/off = 105 , SS-th = 114 mV dec-1 , µe = 0.22 cm2 V-1 s-1 ) and the p-type FETs with tailored parameters based on low-density random network of SWCNTs (Vth = -0.2 V, on/off > 105 , SS-th = 63 mV dec-1 , µh = 0.04 cm2 V-1 s-1 ) are integrated on the same substrate in order to obtain high-performance hybrid inverters. The inverters operate in the sub-1 V range (0.9 V) and have high gain (76 V/V), large maximum-equal-criteria noise margins (80%), and peak power consumption of 3 nW, in combination with low hysteresis (10 mV).
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Affiliation(s)
- Artem G Shulga
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
| | - Vladimir Derenskyi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
| | - Jorge Mario Salazar-Rios
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
| | - Dmitry N Dirin
- Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, 8093, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, 8600, Switzerland
| | - Martin Fritsch
- Macromolecular Chemistry Group (buwmakro), Bergische Universität Wuppertal, Gauss-Str. 20, Wuppertal, D-42119, Germany
| | - Maksym V Kovalenko
- Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, 8093, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, 8600, Switzerland
| | - Ullrich Scherf
- Macromolecular Chemistry Group (buwmakro), Bergische Universität Wuppertal, Gauss-Str. 20, Wuppertal, D-42119, Germany
| | - Maria A Loi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
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5
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Lee HS, Choi K, Kim JS, Yu S, Ko KR, Im S. Coupling Two-Dimensional MoTe 2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters. ACS APPLIED MATERIALS & INTERFACES 2017; 9:15592-15598. [PMID: 28436650 DOI: 10.1021/acsami.7b02838] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 104. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics.
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Affiliation(s)
- Han Sol Lee
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea
| | - Kyunghee Choi
- ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute(ETRI) , 218 Gajeong-ro, Yuseong-gu, Daejeon, 34129, Republic of Korea
| | - Jin Sung Kim
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea
| | - Sanghyuck Yu
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea
| | - Kyeong Rok Ko
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea
| | - Seongil Im
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea
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6
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He HY. One-step assembly of 2H-1T MoS 2:Cu/reduced graphene oxide nanosheets for highly efficient hydrogen evolution. Sci Rep 2017; 7:45608. [PMID: 28406150 PMCID: PMC5390276 DOI: 10.1038/srep45608] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2017] [Accepted: 02/27/2017] [Indexed: 11/09/2022] Open
Abstract
The transition metal dichagenides and their metallic 1T structure are attracting contemporary attentions for applications in high-performance devices because their peculiar optical and electrical properties. The single and few layers 1T structure is generally obtained by mechanical or chemical exfoliation. This work presents facile one-step synthesis of 2H-1T MoS2:Cu/reduced graphene oxide nanosheets. The experiment results indicated that the MoS2 and MoS2:Cu prepared by simple chemical solution reaction possessed 2H-1T structures. The reduced graphene oxide (rGO) incorporation further induced the phase transition from 2H-MoS2 to 1T-MoS2 and morphology transition from granular/nanosheet to more nanosheet. The 2H-1T structure and 2H → 1T phase transition, together with the Cu doping and interface effect between the MoS2 and rGO, remarkably enhanced the conduction and photoconduction of the nanostructures. Thus, Cu doping and rGO incorporation obviously enhanced the catalytic activity and its stability, making the MoS2:Cu/rGO nanosheet a most active and stable catalyst for hydrogen evolution. This work clearly indicates that the 1T-MoS2 nanosheets with high catalytic activity for hydrogen evolution can be easily obtained by the facile low temperature chemical method and induction of rGO.
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Affiliation(s)
- H-Y He
- College of Material Science and Engineering, Shaanxi University of Science and Technology, 710021, China
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7
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He X, Chow W, Liu F, Tay B, Liu Z. MoS 2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1602558. [PMID: 27762499 DOI: 10.1002/smll.201602558] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2016] [Revised: 09/19/2016] [Indexed: 06/06/2023]
Abstract
2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm2 V-1 s-1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS2 and rubrene. Furthermore, being a building block, the MoS2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices.
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Affiliation(s)
- Xuexia He
- School of Materials Science and Engineering, Shaanxi Normal University, 710119, Xi'an, China
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
| | - WaiLeong Chow
- Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Fucai Liu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
| | - BengKang Tay
- Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Zheng Liu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
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8
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Das T, Chen X, Jang H, Oh IK, Kim H, Ahn JH. Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016; 12:5720-5727. [PMID: 27608439 DOI: 10.1002/smll.201602101] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2016] [Revised: 07/20/2016] [Indexed: 06/06/2023]
Abstract
2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics.
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Affiliation(s)
- Tanmoy Das
- Center for Strain Engineered Electronic Devices, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea
| | - Xiang Chen
- Center for Strain Engineered Electronic Devices, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea
| | - Houk Jang
- Center for Strain Engineered Electronic Devices, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea
| | - Il-Kwon Oh
- Nanodevice Laboratory, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea
| | - Hyungjun Kim
- Nanodevice Laboratory, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea
| | - Jong-Hyun Ahn
- Center for Strain Engineered Electronic Devices, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea.
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9
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Synthesis of Vertically Standing MoS2 Triangles on SiC. Sci Rep 2016; 6:31980. [PMID: 27550237 PMCID: PMC4994075 DOI: 10.1038/srep31980] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/03/2016] [Accepted: 07/25/2016] [Indexed: 11/26/2022] Open
Abstract
Layered material MoS2 has been attracting much attention due to its excellent electronical properties and catalytic property. Here we report the synthesis of vertically standing MoS2 triangles on silicon carbon(SiC), through a rapid sulfidation process. Such edge-terminated films are metastable structures of MoS2, which may find applications in FinFETs and catalytic reactions. We have confirmed the catalytic property in a hydrogen evolution reaction(HER). The Tafel slope is about 54mV/decade.
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10
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Pu J, Funahashi K, Chen CH, Li MY, Li LJ, Takenobu T. Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:4111-4119. [PMID: 27007295 DOI: 10.1002/adma.201503872] [Citation(s) in RCA: 44] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2015] [Revised: 02/11/2016] [Indexed: 06/05/2023]
Abstract
Complementary inverters constructed from large-area monolayers of WSe2 and MoS2 achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe2 complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics.
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Affiliation(s)
- Jiang Pu
- Department of Advanced Science and Engineering, Waseda University, Tokyo, 169-8555, Japan
| | - Kazuma Funahashi
- Department of Advanced Science and Engineering, Waseda University, Tokyo, 169-8555, Japan
| | - Chang-Hsiao Chen
- Department of Automatic Control Engineering, Feng Chia University, Taichung, 40724, Taiwan
| | - Ming-Yang Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
- Research Center for Applied Sciences, Academia Sinica, Taipei, 10617, Taiwan
| | - Lain-Jong Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Taishi Takenobu
- Department of Advanced Science and Engineering, Waseda University, Tokyo, 169-8555, Japan
- Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Tokyo, 169-0051, Japan
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11
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Jeon PJ, Kim JS, Lim JY, Cho Y, Pezeshki A, Lee HS, Yu S, Min SW, Im S. Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits. ACS APPLIED MATERIALS & INTERFACES 2015; 7:22333-22340. [PMID: 26399664 DOI: 10.1021/acsami.5b06027] [Citation(s) in RCA: 47] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Two-dimensional (2D) semiconductor materials with discrete bandgap become important because of their interesting physical properties and potentials toward future nanoscale electronics. Many 2D-based field effect transistors (FETs) have thus been reported. Several attempts to fabricate 2D complementary (CMOS) logic inverters have been made too. However, those CMOS devices seldom showed the most important advantage of typical CMOS: low power consumption. Here, we adopted p-WSe2 and n-MoS2 nanosheets separately for the channels of bottom-gate-patterned FETs, to fabricate 2D dichalcogenide-based hetero-CMOS inverters on the same glass substrate. Our hetero-CMOS inverters with electrically isolated FETs demonstrate novel and superior device performances of a maximum voltage gain as ∼27, sub-nanowatt power consumption, almost ideal noise margin approaching 0.5VDD (supply voltage, VDD=5 V) with a transition voltage of 2.3 V, and ∼800 μs for switching delay. Moreover, our glass-substrate CMOS device nicely performed digital logic (NOT, OR, and AND) and push-pull circuits for organic light-emitting diode switching, directly displaying the prospective of practical applications.
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Affiliation(s)
- Pyo Jin Jeon
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Jin Sung Kim
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - June Yeong Lim
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Youngsuk Cho
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Atiye Pezeshki
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Hee Sung Lee
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Sanghyuck Yu
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Sung-Wook Min
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Seongil Im
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
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12
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Shokouh SHH, Pezeshki A, Ali Raza SR, Lee HS, Min SW, Jeon PJ, Shin JM, Im S. High-gain subnanowatt power consumption hybrid complementary logic inverter with WSe2 nanosheet and ZnO nanowire transistors on glass. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:150-156. [PMID: 25377731 DOI: 10.1002/adma.201403992] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2014] [Revised: 09/27/2014] [Indexed: 06/04/2023]
Abstract
A 1D-2D hybrid complementary logic inverter comprising of ZnO nanowire and WSe2 nanosheet field-effect transistors (FETs) is fabricated on glass, which shows excellent static and dynamic electrical performances with a voltage gain of ≈60, sub-nanowatt power consumption, and at least 1 kHz inverting speed.
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13
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Hosseini Shokouh SH, Pezeshki A, Ali Raza SR, Choi K, Min SW, Jeon PJ, Lee HS, Im S. Molybdenum disulfide nanoflake-zinc oxide nanowire hybrid photoinverter. ACS NANO 2014; 8:5174-5181. [PMID: 24717126 DOI: 10.1021/nn501230v] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We demonstrate a hybrid inverter-type nanodevice composed of a MoS2 nanoflake field-effect transistor (FET) and ZnO nanowire Schottky diode on one substrate, aiming at a one-dimensional (1D)-two-dimensional (2D) hybrid integrated electronic circuit with multifunctional capacities of low power consumption, high gain, and photodetection. In the present work, we used a nanotransfer printing method using polydimethylsiloxane for the fabrication of patterned bottom-gate MoS2 nanoflake FETs, so that they could be placed near the ZnO nanowire Schottky diodes that were initially fabricated. The ZnO nanowire Schottky diode and MoS2 FET worked respectively as load and driver for a logic inverter, which exhibits a high voltage gain of ∼50 at a supply voltage of 5 V and also shows a low power consumption of less than 50 nW. Moreover, our inverter effectively operates as a photoinverter, detecting visible photons, since MoS2 FETs appear very photosensitive, while the serially connected ZnO nanowire Schottky diode was blind to visible light. Our 1D-2D hybrid nanoinverter would be quite promising for both logic and photosensing applications due to its performance and simple device configuration as well.
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14
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Ganatra R, Zhang Q. Few-layer MoS2: a promising layered semiconductor. ACS NANO 2014; 8:4074-99. [PMID: 24660756 DOI: 10.1021/nn405938z] [Citation(s) in RCA: 461] [Impact Index Per Article: 46.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Due to the recent expanding interest in two-dimensional layered materials, molybdenum disulfide (MoS2) has been receiving much research attention. Having an ultrathin layered structure and an appreciable direct band gap of 1.9 eV in the monolayer regime, few-layer MoS2 has good potential applications in nanoelectronics, optoelectronics, and flexible devices. In addition, the capability of controlling spin and valley degrees of freedom makes it a promising material for spintronic and valleytronic devices. In this review, we attempt to provide an overview of the research relevant to the structural and physical properties, fabrication methods, and electronic devices of few-layer MoS2. Recent developments and advances in studying the material are highlighted.
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Affiliation(s)
- Rudren Ganatra
- NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University , 639798 Singapore
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