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Lee I, Kang WT, Kim JE, Kim YR, Won UY, Lee YH, Yu WJ. Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS 2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor. ACS NANO 2020; 14:7574-7580. [PMID: 32401483 DOI: 10.1021/acsnano.0c03425] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) layered materials with properties such as a large surface-to-volume ratio, strong light interaction, and transparency are expected to be used in future optoelectronic applications. Many studies have focused on ways to increase absorption of 2D-layered materials for use in photodetectors. In this work, we demonstrate another strategy for improving photodetector performance using a graphene/MoS2 heterojunction phototransistor with a short channel length and a tunable Schottky barrier. The channel length of sub-30 nm, shorter than the diffusion length, decreases carrier recombination and carrier transit time in the channel and improves phototransistor performance. Furthermore, our graphene/MoS2 heterojunction phototransistor employed a tunable Schottky barrier that is only controlled by light and gate bias. It maintains a low dark current and an increased photocurrent. As a result, our graphene/MoS2 heterojunction phototransistor showed ultrahigh responsivity and detectivity of 2.2 × 105 A/W and 3.5 × 1013 Jones, respectively. This is a considerable improvement compared to previous pristine MoS2 phototransistors. We confirmed an effective method to develop phototransistors based on 2D materials and obtained ultrahigh performance of our phototransistor, which is promising for high-performance optoelectronic applications.
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Affiliation(s)
- Ilmin Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Won Tae Kang
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Ji Eun Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Rae Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Ui Yeon Won
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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Ma LP, Dong S, Chen M, Ma W, Sun D, Gao Y, Ma T, Cheng HM, Ren W. UV-Epoxy-Enabled Simultaneous Intact Transfer and Highly Efficient Doping for Roll-to-Roll Production of High-Performance Graphene Films. ACS APPLIED MATERIALS & INTERFACES 2018; 10:40756-40763. [PMID: 30394723 DOI: 10.1021/acsami.8b13686] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Flexible graphene transparent conductive films (TCFs) prepared by chemical vapor deposition hold great promise for next-generation wearable optoelectronic devices, but the lack of low-cost scalable intact transfer and highly efficient doping greatly limits their commercialization. Here, we report a UV-epoxy adhesive as a robust multifunctional layer for the low-cost scalable production of high-performance flexible graphene TCF. Its high solvent stability, sufficient adhesion force, and conformal contact with graphene enable the intact bubbling transfer of graphene. More importantly, a highly strong and stable p-dopant, superacid HSbF6, is in situ generated from UV-epoxy. HSbF6 substantially increases the hole concentration of pristine graphene by more than 10 times and consequently reduces its sheet resistance by up to 95% with high stability. Furthermore, it can be readily integrated with the roll-to-roll transfer process. These features enable continuous production of graphene TCFs with overall performances superior to those produced by common transfer methods and typical dopants. As an example, we demonstrate the use of this film in the capacitive multitouch panel of tablet computers.
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Affiliation(s)
- Lai-Peng Ma
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Shichao Dong
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Maolin Chen
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Wei Ma
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Dongming Sun
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Yang Gao
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Teng Ma
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
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A Library of Doped-Graphene Images via Transmission Electron Microscopy. C — JOURNAL OF CARBON RESEARCH 2018. [DOI: 10.3390/c4020034] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
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Jeong SJ, Jo S, Lee J, Yang K, Lee H, Lee CS, Park H, Park S. Self-Aligned Multichannel Graphene Nanoribbon Transistor Arrays Fabricated at Wafer Scale. NANO LETTERS 2016; 16:5378-5385. [PMID: 27532894 DOI: 10.1021/acs.nanolett.6b01542] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We present a novel method for fabricating large-area field-effect transistors (FETs) based on densely packed multichannel graphene nanoribbon (GNR) arrays using advanced direct self-assembly (DSA) nanolithography. The design of our strategy focused on the efficient integration of the FET channel and using fab-compatible processes such as thermal annealing and chemical vapor deposition. We achieved linearly stacked DSA nanopattern arrays with sub-10 nm half-pitch critical dimensions (CD) by controlling the thickness of topographic Au confinement patterns. Excellent roughness values (∼10% of CD) were obtained, demonstrating the feasibility of integrating sub-10 nm GNRs into commercial semiconductor processes. Based on this facile process, FETs with such densely packed multichannel GNR arrays were successfully fabricated on 6 in. silicon wafers. With these high-quality GNR arrays, we achieved FETs showing the highest performance reported to date (an on-to-off ratio larger than 10(2)) for similar devices produced using conventional photolithography and block-copolymer lithography.
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Affiliation(s)
- Seong-Jun Jeong
- Device Laboratory and ‡Platform Technology Laboratory, Device & System Research Center, Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea
| | - Sanghyun Jo
- Device Laboratory and ‡Platform Technology Laboratory, Device & System Research Center, Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea
| | - Jooho Lee
- Device Laboratory and ‡Platform Technology Laboratory, Device & System Research Center, Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea
| | - Kiyeon Yang
- Device Laboratory and ‡Platform Technology Laboratory, Device & System Research Center, Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea
| | - Hyangsook Lee
- Device Laboratory and ‡Platform Technology Laboratory, Device & System Research Center, Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea
| | - Chang-Seok Lee
- Device Laboratory and ‡Platform Technology Laboratory, Device & System Research Center, Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea
| | - Heesoon Park
- Device Laboratory and ‡Platform Technology Laboratory, Device & System Research Center, Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea
| | - Seongjun Park
- Device Laboratory and ‡Platform Technology Laboratory, Device & System Research Center, Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea
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Liu L, Cao Z, Wang W, Wang E, Cao Y, Zhan Z. Substrate-dependent resistance decrease of graphene by ultraviolet-ozone charge doping. RSC Adv 2016. [DOI: 10.1039/c6ra11044d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023] Open
Abstract
Graphene's resistance can decrease as much as 80% via UVO treatment depending on a substrates' band gap and photogenerated charge carriers.
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Affiliation(s)
- Lihui Liu
- Department of Microtechnology and Nanoscience
- Chalmers University of Technology
- Göteborg 41296
- Sweden
| | - Zhejian Cao
- Department of Microtechnology and Nanoscience
- Chalmers University of Technology
- Göteborg 41296
- Sweden
| | - Wei Wang
- Department of Microtechnology and Nanoscience
- Chalmers University of Technology
- Göteborg 41296
- Sweden
| | - Ergang Wang
- Department of Chemistry and Chemical Engineering
- Chalmers University of Technology
- Göteborg 41296
- Sweden
| | - Yu Cao
- Department of Materials and Manufacturing Technology
- Chalmers University of Technology
- Göteborg 41296
- Sweden
| | - Zhaoyao Zhan
- Department of Microtechnology and Nanoscience
- Chalmers University of Technology
- Göteborg 41296
- Sweden
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Bointon TH, Jones GF, De Sanctis A, Hill-Pearce R, Craciun MF, Russo S. Large-area functionalized CVD graphene for work function matched transparent electrodes. Sci Rep 2015; 5:16464. [PMID: 26548711 PMCID: PMC4997100 DOI: 10.1038/srep16464] [Citation(s) in RCA: 45] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2015] [Accepted: 09/28/2015] [Indexed: 11/09/2022] Open
Abstract
The efficiency of flexible photovoltaic and organic light emitting devices is heavily dependent on the availability of flexible and transparent conductors with at least a similar workfunction to that of Indium Tin Oxide. Here we present the first study of the work function of large area (up to 9 cm(2)) FeCl3 intercalated graphene grown by chemical vapour deposition on Nickel, and demonstrate values as large as 5.1 eV. Upon intercalation, a charge density per graphene layer of 5 ⋅ 10(13) ± 5 ⋅ 10(12) cm(-2) is attained, making this material an attractive platform for the study of plasmonic excitations in the infrared wavelength spectrum of interest to the telecommunication industry. Finally, we demonstrate the potential of this material for flexible electronics in a transparent circuit on a polyethylene naphthalate substrate.
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Affiliation(s)
- Thomas H Bointon
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Gareth F Jones
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Adolfo De Sanctis
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Ruth Hill-Pearce
- National Physical Laboratory, Teddington TW11 0LW, United Kingdom
| | - Monica F Craciun
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Saverio Russo
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
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