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Leshchenko ED, Dubrovskii VG. An Overview of Modeling Approaches for Compositional Control in III-V Ternary Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13101659. [PMID: 37242075 DOI: 10.3390/nano13101659] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Revised: 05/11/2023] [Accepted: 05/15/2023] [Indexed: 05/28/2023]
Abstract
Modeling of the growth process is required for the synthesis of III-V ternary nanowires with controllable composition. Consequently, new theoretical approaches for the description of epitaxial growth and the related chemical composition of III-V ternary nanowires based on group III or group V intermix were recently developed. In this review, we present and discuss existing modeling strategies for the stationary compositions of III-V ternary nanowires and try to systematize and link them in a general perspective. In particular, we divide the existing approaches into models that focus on the liquid-solid incorporation mechanisms in vapor-liquid-solid nanowires (equilibrium, nucleation-limited, and kinetic models treating the growth of solid from liquid) and models that provide the vapor-solid distributions (empirical, transport-limited, reaction-limited, and kinetic models treating the growth of solid from vapor). We describe the basic ideas underlying the existing models and analyze the similarities and differences between them, as well as the limitations and key factors influencing the stationary compositions of III-V nanowires versus the growth method. Overall, this review provides a basis for choosing a modeling approach that is most appropriate for a particular material system and epitaxy technique and that underlines the achieved level of the compositional modeling of III-V ternary nanowires and the remaining gaps that require further studies.
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Affiliation(s)
- Egor D Leshchenko
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
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2
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Sjökvist R, Tornberg M, Marnauza M, Jacobsson D, Dick KA. Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires. ACS NANOSCIENCE AU 2022; 2:539-548. [PMID: 37101854 PMCID: PMC10125347 DOI: 10.1021/acsnanoscienceau.2c00028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 08/23/2022] [Accepted: 08/23/2022] [Indexed: 04/28/2023]
Abstract
Au-seeded semiconductor nanowires have classically been considered to only grow in a layer-by-layer growth mode, where individual layers nucleate and grow one at a time with an incubation step in between. Recent in situ investigations have shown that there are circumstances where binary semiconductor nanowires grow in a multilayer fashion, creating a stack of incomplete layers at the interface between a nanoparticle and a nanowire. In the current investigation, the growth behavior in ternary InGaAs nanowires has been analyzed in situ, using environmental transmission electron microscopy. The investigation has revealed that multilayer growth also occurs for ternary nanowires and appears to be more common than in the binary case. In addition, the size of the multilayer stacks observed is much larger than what has been reported previously. The investigation details the implications of multilayers for the overall growth of the nanowires, as well as the surrounding conditions under which it has manifested. We show that multilayer growth is highly dynamic, where the stack of layers regularly changes size by transporting material between the growing layers. Another observation is that multilayer growth can be initiated in conjunction with the formation of crystallographic defects and compositional changes. In addition, the role that multilayers can have in behaviors such as growth failure and kinking, sometimes observed when creating heterostructures between GaAs and InAs ex situ, is discussed. The prevalence of multilayer growth in this ternary material system implies that, in order to fully understand and accurately predict the growth of nanowires of complex composition and structure, multilayer growth has to be considered.
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Affiliation(s)
- Robin Sjökvist
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Marcus Tornberg
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Mikelis Marnauza
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Daniel Jacobsson
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- National
Centre for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Kimberly A. Dick
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
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3
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Sjökvist R, Jacobsson D, Tornberg M, Wallenberg R, Leshchenko ED, Johansson J, Dick KA. Compositional Correlation between the Nanoparticle and the Growing Au-Assisted In xGa 1-xAs Nanowire. J Phys Chem Lett 2021; 12:7590-7595. [PMID: 34347497 PMCID: PMC8397339 DOI: 10.1021/acs.jpclett.1c02121] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
The nanowire geometry is favorable for the growth of ternary semiconductor materials, because the composition and properties can be tuned freely without substrate lattice matching. To achieve precise control of the composition in ternary semiconductor nanowires, a deeper understanding of the growth is required. One unknown aspect of seeded nanowire growth is how the composition of the catalyst nanoparticle affects the resulting composition of the growing nanowire. We report the first in situ measurements of the nanoparticle and InxGa1-xAs nanowire compositional relationship using an environmental transmission electron microscopy setup. The compositions were measured and correlated during growth, via X-ray energy dispersive spectroscopy. Contrary to predictions from thermodynamic models, the experimental results do not show a miscibility gap. Therefore, we construct a kinetic model that better predicts the compositional trends by suppressing the miscibility gap. The findings imply that compositional control of InxGa1-xAs nanowires is possible across the entire compositional range.
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Affiliation(s)
- Robin Sjökvist
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Daniel Jacobsson
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- National
Centre for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Marcus Tornberg
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Reine Wallenberg
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- National
Centre for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Egor D. Leshchenko
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
| | - Jonas Johansson
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
| | - Kimberly A. Dick
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
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4
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Ghasemi M, Leshchenko ED, Johansson J. Assembling your nanowire: an overview of composition tuning in ternary III-V nanowires. NANOTECHNOLOGY 2021; 32:072001. [PMID: 33091889 DOI: 10.1088/1361-6528/abc3e2] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The ability to grow defect-free nanowires in lattice-mismatched material systems and to design their properties has made them ideal candidates for applications in fields as diverse as nanophotonics, nanoelectronics and medicine. After studying nanostructures consisting of elemental and binary compound semiconductors, scientists turned their attention to more complex systems-ternary nanowires. Composition control is key in these nanostructures since it enables bandgap engineering. The use of different combinations of compounds and different growth methods has resulted in numerous investigations. The aim of this review is to present a survey of the material systems studied to date, and to give a brief overview of the issues tackled and the progress achieved in nanowire composition tuning. We focus on ternary III x III1-x V nanowires (AlGaAs, AlGaP, AlInP, InGaAs, GaInP and InGaSb) and IIIV x V1-x nanowires (InAsP, InAsSb, InPSb, GaAsP, GaAsSb and GaSbP).
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Affiliation(s)
| | - Egor D Leshchenko
- Solid State Physics and NanoLund, Lund University, P O Box 118, SE-221 00 Lund, Sweden
| | - Jonas Johansson
- Solid State Physics and NanoLund, Lund University, P O Box 118, SE-221 00 Lund, Sweden
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5
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Goktas NI, Dubrovskii VG, LaPierre RR. Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires. J Phys Chem Lett 2021; 12:1275-1283. [PMID: 33497239 DOI: 10.1021/acs.jpclett.0c03712] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
GaAs-InGaAs-GaAs core-shell-shell nanowire (NW) structures were grown by gas source molecular beam epitaxy using the selective-area, self-assisted, vapor-liquid-solid method. The structural, morphological, and optical properties of the NWs were examined for different growth conditions of the InGaAs shell. With increasing In concentration of the InGaAs shell, the growth transitioned from preferential deposition at the NW base to the Stranski-Krastanov growth mode where InGaAs islands formed along the NW length. This trend is explained within a nucleation model where there is a critical In flux below which the conformal growth is suppressed and the shell forms only at the NW base. Low growth temperature produced a more uniform In distribution along the NW length but resulted in quenching of the photoluminescence (PL) emission. Alternatively, reducing the shell thickness and increasing the V/III flux ratio resulted in conformal InGaAs shell growth and quantum dot-like PL emission. Our results indicate a pathway toward the conditions for conformal InGaAs shell growth required for satisfactory optoelectronic performance.
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Affiliation(s)
- Nebile Isik Goktas
- Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, Canada
| | - Vladimir G Dubrovskii
- Department of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Ray R LaPierre
- Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, Canada
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Blake JC, Nieto-Pescador J, Li Z, Gundlach L. Femtosecond Luminescence Imaging for Single Nanoparticle Characterization. J Phys Chem A 2020; 124:4583-4593. [PMID: 32427477 DOI: 10.1021/acs.jpca.0c01775] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Defects naturally abound in semiconductor crystal structures and their presence either debilitates or improves device functionality. The increasing trend to strategically implant or remove specific defects to tailor the properties in materials via defect engineering has made it imperative to not only quantify these defects in nanostructures but to do so via efficient contactless techniques. Here we report the use of an ultrafast Kerr-gated microscope system to quantify the defect density at different locations on a single nanowire. By measuring the evolution of nonlinear luminescence dynamics from a nanowire, we are able to extract the individual nonradiative recombination constants and obtain the defect density at locations along the nanowire length. This new method promises fast, reliable, and contactless characterization of single nanoparticles.
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Affiliation(s)
- Jolie C Blake
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States
| | - Jesus Nieto-Pescador
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, United States
| | - Zhengxin Li
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States
| | - Lars Gundlach
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States.,Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, United States
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7
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Gao H, Sun Q, Sun W, Tan HH, Jagadish C, Zou J. Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires. NANO LETTERS 2019; 19:8262-8269. [PMID: 31661618 DOI: 10.1021/acs.nanolett.9b03835] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Understanding the effect of a catalyst on the growth of nanowires is crucial for their controllable synthesis. In this study, we report the growth of InGaP nanowires induced by different-sized Au catalysts by metal-organic chemical vapor deposition. Through electron microscopy characterization, two types of InGaP nanowires are identified, and the difference in catalyst size is shown to cause their different morphological, structural, and compositional characteristics. Furthermore, the influencing mechanism of catalyst size on the formation of hierarchical structures in nanowires is discussed. This study provides an insight for a better understanding of the growth of ternary nanowires, especially the effect of catalyst size, which can be a promising approach to control the ternary nanowire growth, and is therefore beneficial for the design of the corresponding nanowire-based device.
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Affiliation(s)
| | | | | | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
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8
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Sitek A, Urbaneja Torres M, Manolescu A. Corner and side localization of electrons in irregular hexagonal semiconductor shells. NANOTECHNOLOGY 2019; 30:454001. [PMID: 31370045 DOI: 10.1088/1361-6528/ab37a1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We discuss the low energy electronic states in hexagonal rings. These states correspond to the transverse modes in core-shell nanowires built of III-V semiconductors which typically have a hexagonal cross section. In the case of symmetric structures the 12 lowest states (including the spin) are localized in the corners, while the next following 12 states are localized mostly on the sides. Depending on the material parameters, in particular the effective mass, the ring diameter and width, the corner and side states may be separated by a considerable energy gap, ranging from few to tens of meV. In a realistic fabrication process geometric asymmetries are unavoidable, and therefore the particles are not symmetrically distributed between all corner and side areas. Possibly, even small deformations may shift the localization of the ground state to one of the sides. The transverse states or the transitions between them may be important in transport or optical experiments. Still, up to date, there are only very few experimental investigations of the localization-dependent properties of core-shell nanowires.
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Affiliation(s)
- Anna Sitek
- School of Science and Engineering, Reykjavik University, Menntavegur 1, IS-101 Reykjavik, Iceland. Department of Theoretical Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
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9
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Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 79] [Impact Index Per Article: 15.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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10
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Gao H, Sun W, Sun Q, Tan HH, Jagadish C, Zou J. Compositional Varied Core-Shell InGaP Nanowires Grown by Metal-Organic Chemical Vapor Deposition. NANO LETTERS 2019; 19:3782-3788. [PMID: 31117755 DOI: 10.1021/acs.nanolett.9b00915] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In this study, we report the growth of core-shell InGaP nanowires with compositional varied cores/shells using metal-organic chemical vapor deposition. These core-shell InGaP nanowires exhibit Ga-enriched cores attributed to the strong affinity between Au and In, and In-enriched shells due to In-rich vapor ambient. Detailed electron microscopy investigations indicate that the In and Ga concentrations in the nanowire cores and shells varied along the growth direction of InGaP nanowires. It is found that the strain relaxation through Ga diffusion outward and In diffusion inward leads to the decrease of compositional difference between the nanowire core and shell from top to bottom. This study offers a possibility to grow structural complex ternary nanowires that can be used for future applications.
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Affiliation(s)
- Han Gao
- Materials Engineering , The University of Queensland , St. Lucia , QLD 4072 , Australia
| | - Wen Sun
- Materials Engineering , The University of Queensland , St. Lucia , QLD 4072 , Australia
| | - Qiang Sun
- Materials Engineering , The University of Queensland , St. Lucia , QLD 4072 , Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Jin Zou
- Materials Engineering , The University of Queensland , St. Lucia , QLD 4072 , Australia
- Centre for Microscopy and Microanalysis , The University of Queensland , St. Lucia , QLD 4072 , Australia
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11
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Axial heterostructure of Au-catalyzed InGaAs/GaAs nanowires grown by metal-organic chemical vapor deposition. Chem Phys Lett 2018. [DOI: 10.1016/j.cplett.2017.11.061] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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12
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Wallentin J, Jacobsson D, Osterhoff M, Borgström MT, Salditt T. Bending and Twisting Lattice Tilt in Strained Core-Shell Nanowires Revealed by Nanofocused X-ray Diffraction. NANO LETTERS 2017; 17:4143-4150. [PMID: 28613907 DOI: 10.1021/acs.nanolett.7b00918] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We have investigated strained GaAs-GaInP core-shell nanowires using transmission electron microscopy and nanofocused scanning X-ray diffraction. Nominally identical growth conditions for each sample were achieved by using nanoimprint lithography to create wafer-scale arrays of Au seed particles. However, we observe large individual differences, with neighboring nanowires showing either straight, bent, or twisted morphology. Using scanning X-ray diffraction, we reconstructed and quantified the bending and twisting of the nanowires in three dimensions. In one nanowire, we find that the shell lattice is tilted with respect to the core lattice, with an angle that increases from 2° at the base to 5° at the top. Furthermore, the azimuthal orientation of the tilt changes by 30° along the nanowire axis. Our results demonstrate how strained core-shell nanowire growth can lead to a rich interplay of composition, lattice mismatch, bending and lattice tilt, with additional degrees of complexity compared with thin films.
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Affiliation(s)
- Jesper Wallentin
- Institute for X-Ray Physics , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
- Synchrotron Radiation Research and NanoLund, Lund University , Box 118, 221 00 Lund, Sweden
| | - Daniel Jacobsson
- Solid State Physics and NanoLund, Lund University , Box 118, 221 00 Lund, Sweden
- Centre for Analysis and Synthesis, Lund University , Box 124, 221 00 Lund, Sweden
| | - Markus Osterhoff
- Institute for X-Ray Physics , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
| | - Magnus T Borgström
- Solid State Physics and NanoLund, Lund University , Box 118, 221 00 Lund, Sweden
| | - Tim Salditt
- Institute for X-Ray Physics , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
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13
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Berg A, Lenrick F, Vainorius N, Beech JP, Wallenberg LR, Borgström MT. Growth parameter design for homogeneous material composition in ternary Ga(x)In(1-x)P nanowires. NANOTECHNOLOGY 2015; 26:435601. [PMID: 26443552 DOI: 10.1088/0957-4484/26/43/435601] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ternary nanowires (NWs) often exhibit varying material composition along the NW growth axis because of different diffusion properties of the precursor molecules. This constitutes a problem for optoelectronic devices for which a homogeneous material composition is most often of importance. Especially, ternary GaInP NWs grown under a constant Ga-In precursor ratio typically show inhomogeneous material composition along the length of the NW due to the complexity of low temperature precursor pyrolysis and relative rates of growth species from gas phase diffusion and surface diffusion that contribute to synthesis of particle-assisted growth. Here, we present the results of a method to overcome this challenge by in situ tuning of the trimethylindium molar fraction during growth of ternary Zn-doped GaInP NWs. The NW material compositions were determined by use of x-ray diffraction, scanning transmission electron microscopy and energy dispersive x-ray spectroscopy and the optical properties by photoluminescence spectroscopy.
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Affiliation(s)
- Alexander Berg
- Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden
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14
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Ameruddin AS, Caroff P, Tan HH, Jagadish C, Dubrovskii VG. Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires. NANOSCALE 2015; 7:16266-16272. [PMID: 26376711 DOI: 10.1039/c5nr04129e] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
InGaAs nanowires offer great promise in fundamental studies of ternary compound semiconductors with variable composition and opens up a wide range of applications due to their bandgap tunability and high carrier mobility. Here, we report a study on the growth of Au-seeded InGaAs nanowires by metal-organic vapour phase epitaxy and present a model to explain the mechanisms that govern the growth and composition evolution in ternary III-V nanowires. The model allows us to further understand the limitations on the growth rate and incorporation of the two group III species imposed by the deposition conditions and some intrinsic properties of the material transport and nucleation. Within the model, the evolution of InGaAs nanowire growth rate and composition with particle size, temperature and V/III ratio is described and correlates very well with experimental findings. The understanding gained in this study should be useful for the controlled fabrication of tunable ternary nanowires for various applications.
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Affiliation(s)
- A S Ameruddin
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 2601, Australia.
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15
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Zhang Z, Lu ZY, Chen PP, Lu W, Zou J. Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy. NANOSCALE 2015; 7:12592-12597. [PMID: 26145435 DOI: 10.1039/c5nr03503a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
In this study, we devised a two-V/III-ratio procedure to control the Au-assisted growth of defect-free InAs nanowires in molecular beam epitaxy. The demonstrated two V/III ratio procedure consists of a first high V/III ratio growth step to prepare the nanowire foundation on the substrate surface, followed by a low V/III ratio step to induce the nanowire growth. By manipulating the V/III ratios in different steps, we have achieved the controlled growth of pure defect-free zinc-blende structured InAs nanowires on the GaAs {1̄1̄1̄} substrates. This study provides an approach to control not only the crystal structure of semiconductor nanowires, but also their structural qualities.
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Affiliation(s)
- Zhi Zhang
- Materials Engineering, The University of Queensland, St. Lucia, QLD 4072, Australia.
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