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Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures. ENERGIES 2020. [DOI: 10.3390/en13215851] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/16/2023]
Abstract
The thermal conductivity and interface thermal conductance of graphene stacked MoS2 (graphene/MoS2) van der Waals heterostructure were studied by the first principles and molecular dynamics (MD) simulations. Firstly, two different heterostructures were established and optimized by VASP. Subsequently, we obtained the thermal conductivity (K) and interfacial thermal conductance (G) via MD simulations. The predicted Κ of monolayer graphene and monolayer MoS2 reached 1458.7 W/m K and 55.27 W/m K, respectively. The thermal conductance across the graphene/MoS2 interface was calculated to be 8.95 MW/m2 K at 300 K. The G increases with temperature and the interface coupling strength. Finally, the phonon spectra and phonon density of state were obtained to analyze the changing mechanism of thermal conductivity and thermal conductance.
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Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers. APPLIED SCIENCES-BASEL 2019. [DOI: 10.3390/app9040678] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS 2 two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS 2 layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved.
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Gong F, Ding Z, Fang Y, Tong CJ, Xia D, Lv Y, Wang B, Papavassiliou DV, Liao J, Wu M. Enhanced Electrochemical and Thermal Transport Properties of Graphene/MoS 2 Heterostructures for Energy Storage: Insights from Multiscale Modeling. ACS APPLIED MATERIALS & INTERFACES 2018; 10:14614-14621. [PMID: 29638106 DOI: 10.1021/acsami.7b19582] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Graphene has been combined with molybdenum disulfide (MoS2) to ameliorate the poor cycling stability and rate performance of MoS2 in lithium ion batteries, yet the underlying mechanisms remain less explored. Here, we develop multiscale modeling to investigate the enhanced electrochemical and thermal transport properties of graphene/MoS2 heterostructures (GM-Hs) with a complex morphology. The calculated electronic structures demonstrate the greatly improved electrical conductivity of GM-Hs compared to MoS2. Increasing the graphene layers in GM-Hs not only improves the electrical conductivity but also stabilizes the intercalated Li atoms in GM-Hs. It is also found that GM-Hs with three graphene layers could achieve and maintain a high thermal conductivity of 85.5 W/(m·K) at a large temperature range (100-500 K), nearly 6 times that of pure MoS2 [∼15 W/(m·K)], which may accelerate the heat conduction from electrodes to the ambient. Our quantitative findings may shed light on the enhanced battery performances of various graphene/transition-metal chalcogenide composites in energy storage devices.
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Affiliation(s)
- Feng Gong
- School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 611731 , China
| | - Zhiwei Ding
- Department of Material Science and Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Yin Fang
- James Franck Institute , University of Chicago , Chicago , Illinois 60637 , United States
| | - Chuan-Jia Tong
- Beijing Computational Science Research Center , Beijing 100193 , China
| | - Dawei Xia
- School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 611731 , China
| | - Yingying Lv
- Department of Materials Science and Engineering , University of Wisconsin-Milwaukee , Baltimore , Maryland 21201 , United States
| | - Bin Wang
- School of Chemical, Biological, and Materials Engineering , University of Oklahoma , Norman , Oklahoma 73019 , United States
| | - Dimitrios V Papavassiliou
- School of Chemical, Biological, and Materials Engineering , University of Oklahoma , Norman , Oklahoma 73019 , United States
| | - Jiaxuan Liao
- School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 611731 , China
| | - Mengqiang Wu
- School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 611731 , China
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Srinivasan S, Balasubramanian G. Reduced Thermal Transport in the Graphene/MoS 2/Graphene Heterostructure: A Comparison with Freestanding Monolayers. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2018; 34:3326-3335. [PMID: 29429341 DOI: 10.1021/acs.langmuir.7b03974] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The thermal conductivity of the graphene-encapsulated MoS2 (graphene/MoS2/graphene) van der Waals heterostructure is determined along the armchair and zigzag directions with different twist angles between the layers using molecular dynamics (MD) simulations. The differences in the predictions relative to those of the monolayers are analyzed using the phonon power spectrum and phonon lifetimes obtained by spectral energy density analysis. The thermal conductivity of the heterostructure is predominantly isotropic. The out-of-plane phonons of graphene are suppressed because of the interaction between the adjacent layers that results in the reduced phonon lifetime and thermal conductivity relative to monolayer graphene. The occurrence of an additional nonzero phonon branch at the Γ point in the phonon dispersion curves of the heterostructure corresponds to the breathing modes resulting from stacking of the layers in the heterostructure. The thermal sheet conductance of the heterostructure being an order of magnitude larger than that of monolayer MoS2, this van der Waals material is potentially suitable for efficient thermal packaging of photoelectronic devices. The interfacial thermal conductance of the graphene/MoS2 bilayer as a function of the heat flow direction shows weak thermal rectification.
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Affiliation(s)
- Srilok Srinivasan
- Department of Mechanical Engineering , Iowa State University , Ames , Iowa 50011 , United States
| | - Ganesh Balasubramanian
- Department of Mechanical Engineering & Mechanics , Lehigh University , Bethlehem , Pennsylvania 18015 , United States
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Mahapatra PS, Sarkar K, Krishnamurthy HR, Mukerjee S, Ghosh A. Seebeck Coefficient of a Single van der Waals Junction in Twisted Bilayer Graphene. NANO LETTERS 2017; 17:6822-6827. [PMID: 28841026 DOI: 10.1021/acs.nanolett.7b03097] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
When two planar atomic membranes are placed within the van der Waals distance, the charge and heat transport across the interface are coupled by the rules of momentum conservation and structural commensurability, leading to outstanding thermoelectric properties. Here we show that an effective "interlayer phonon drag" determines the Seebeck coecient (S) across the van der Waals gap formed in twisted bilayer graphene (tBLG). The cross-plane thermovoltage, which is nonmonotonic in both temperature and density, is generated through scattering of electrons by the out-of-plane layer breathing (ZO'/ZA2) phonon modes and differs dramatically from the expected Landauer-Buttiker formalism in conventional tunnel junctions. The tunability of the cross-plane Seebeck effect in van der Waals junctions may be valuable in creating a new genre of versatile thermoelectric systems with layered solids.
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Affiliation(s)
| | - Kingshuk Sarkar
- Department of Physics, Indian Institute of Science , Bengaluru 560 012, India
| | - H R Krishnamurthy
- Department of Physics, Indian Institute of Science , Bengaluru 560 012, India
| | - Subroto Mukerjee
- Department of Physics, Indian Institute of Science , Bengaluru 560 012, India
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science , Bengaluru 560 012, India
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Gao Y, Liu Q, Xu B. Lattice Mismatch Dominant Yet Mechanically Tunable Thermal Conductivity in Bilayer Heterostructures. ACS NANO 2016; 10:5431-5439. [PMID: 27093571 DOI: 10.1021/acsnano.6b01674] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Heterostructures that are assembled by interfacing two-dimensional (2D) materials offer a unique platform for the emerging devices with unprecedented functions. The attractive functions in heterostructures that are usually absent and beyond the single layer 2D materials are largely affected by the inherent lattice mismatch between layers. Using nonequilibrium molecular dynamics simulations, we show that the phonon thermal transport in the graphene-MoS2 bilayer heterostructure is reduced by the lattice mismatch, and the reduction can be mitigated well by an external tension, weakening the effect of inherent mismatch-induced strain on thermal conductivity. Mechanical analysis in each layered component indicates that the external tension will alleviate the lattice mismatch-induced deformation. The phonon spectra are also softened by the applied tension with a significant shift of frequency from high to low modes. A universal theory is proposed to quantitatively predict the role of the lattice mismatch in thermal conductivity of various bilayer heterostructures and shows good agreement with simulations.
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Affiliation(s)
- Yuan Gao
- Department of Mechanical and Aerospace Engineering, University of Virginia , Charlottesville, Virginia 22904, United States
| | - Qingchang Liu
- Department of Mechanical and Aerospace Engineering, University of Virginia , Charlottesville, Virginia 22904, United States
| | - Baoxing Xu
- Department of Mechanical and Aerospace Engineering, University of Virginia , Charlottesville, Virginia 22904, United States
- Institute for Nanoscale and Quantum Scientific and Technological Advanced Research, University of Virginia , Charlottesville, Virginia 22904, United States
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