Suspended InAs nanowire Josephson junctions assembled via dielectrophoresis

Critical Current Density and Meissner Effect of Smart Meta-Superconductor MgB2 and Bi(Pb)SrCaCuO

The smart meta-superconductor MgB2 and Bi(Pb)SrCaCuO increase the superconducting transition temperature (TC), but the changes in the transport critical current density (JC) and Meissner effect are still unknown. Here, we investigated the JC and Meissner effect of smart meta-superconductor MgB2 and Bi(Pb)SrCaCuO. The use of the standard four-probe method shows that Y2O3:Eu3+ and Y2O3:Eu3++Ag inhomogeneous phase significantly increase the JC, and JC decreases to a minimum value at a higher temperature. The Meissner effect was measured by direct current magnetization. The doping of Y2O3:Eu3+ and Y2O3:Eu3++Ag luminescent inhomogeneous phase causes a Meissner effect of MgB2 and Bi(Pb)SrCaCuO at a higher temperature, while the non-luminescent dopant reduces the temperature at which samples have Meissner effect. The introduction of luminescent inhomogeneous phase in conventional MgB2 and copper oxide high-temperature Bi(Pb)SrCaCuO superconductor increases the TC and JC, and Meissner effect is exerted at higher temperature. Therefore, smart meta-superconductivity is suitable for conventional and copper oxide high-temperature superconductors.

Graphene nanogaps for the directed assembly of single-nanoparticle devices

Significant advances in the synthesis of low-dimensional materials with unique and tuneable electrical, optical and magnetic properties has led to an explosion of possibilities for realising hybrid nanomaterial devices with unconventional and desirable characteristics. However, the lack of ability to precisely integrate individual nanoparticles into devices at scale limits their technological application. Here, we report on a graphene nanogap based platform which employs the large electric fields generated around the point-like, atomically sharp nanogap electrodes to capture single nanoparticles from solution at predefined locations. We demonstrate how gold nanoparticles can be trapped and contacted to form single-electron transistors with a large coupling to a buried electrostatic gate. This platform offers a route to the creation of novel low-dimensional devices, nano- and optoelectronic applications, and the study of fundamental transport phenomena.

Electrical transport and gas sensing characteristics of dielectrophoretically aligned MBE grown catalyst free InAs nanowires

In this report, the precise alignment of catalyst free InAs nanowires (NWs) on pre-patterned Au microelectrodes by dielectrophoresis (DEP) technique for gas sensing applications is presented. The catalyst free InAs NWs have been grown on Si (111) substrate by molecular beam epitaxy (MBE) technique. The effect of dispersing solvents, electrode geometries and gaps, magnitude, frequency and duration of applied voltage etc, has been studied for aligning the InAs NWs by DEP technique. Current-voltage (I-V) measurements on the aligned NWs show linear behavior at room temperature (300 K), which changes to nonlinear at lower temperatures and higher voltages. The nonlinearity at lower temperatures and higher voltages is well explained by a space charge limited current contribution, which further gives a quantitative estimation of free charge carriers and trap density. The DEP aligned NWs exhibit good sensing response upon exposure to 10 ppm NO₂ gas.

Vectorial Control of the Spin-Orbit Interaction in Suspended InAs Nanowires

Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the nature and the orientation of the SOI vector in these wires remain limited despite being of upmost importance. Typical devices feature the nanowires placed on top of a substrate which modifies the SOI vector and spoils the intrinsic symmetries of the system. In this work, we report experimental results on suspended InAs nanowires, in which the wire symmetries are fully preserved and clearly visible in transport measurements. Using a vectorial magnet, the nontrivial evolution of weak antilocalization (WAL) is tracked through all 3D space, and both the spin-orbit length l _SO and coherence length l_φ are determined as a function of the magnetic field magnitude and direction. Studying the angular maps of the WAL signal, we demonstrate that the average SOI within the nanowire is isotropic and that our findings are consistent with a semiclassical quasi-1D model of WAL adapted to include the geometrical constraints of the nanostructure. Moreover, by acting on properly designed side gates, we apply an external electric field introducing an additional vectorial Rashba spin-orbit component whose strength can be controlled by external means. These results give important hints on the intrinsic nature of suspended nanowire and can be interesting for the field of spintronics as well as for the manipulation of Majorana bound states in devices based on hybrid semiconductors.