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Shan Y, Wang J, Guo Z, Liu D, Zhao Y, Lu N, Li L. Surface-Doping-Induced Mobility Modulation Effect for Transport Enhancement in Organic Single-Crystal Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205517. [PMID: 36303527 DOI: 10.1002/adma.202205517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2022] [Revised: 08/31/2022] [Indexed: 06/16/2023]
Abstract
Molecular doping has conventionally been an effective way to improve the electrical-transport performances in organic field-effect transistors (OFETs), while corresponding mechanisms associated with specific doping techniques have been less investigated and discussed in detail. Here, based on ultrathin dinaphtho[2,3-b:2',3'-f]-thieno[3,2-b]thiophene (DNTT) single crystals, robust transconductance enhancements are realized in OFETs upon surface molecular doping realized via van der Waals epitaxially growing crystalline 1,3,4,5,7,8-hexafluoro-tetracyanonaphthoquinodimethane (F6TCNNQ) onto the single crystal's surface. It is proposed that it is the mobility modulation effect (MME) from the interactions between charge-transfer interface and gate electric field, that contributes to more weighted bulk carriers, and finally improves charge-transport performances. The evaluations are further supported by scanning Kelvin probe microscopy (SKPM) surface potential characterizations, which manifest the gate-induced more delocalized holes near the charge-transfer interfaces. Space-charge-limited current (SCLC) investigations, numerical calculations, and theoretical mobility modeling are also performed to corroborate the analysis. This study can deepen the understanding of charge transport in doped semiconductors and provide effective ways for optimizing the electrical performance of organic devices.
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Affiliation(s)
- Yu Shan
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- The School of Microelectronics, University of Science and Technology of China Hefei, Beijing, 230026, China
| | - Jiawei Wang
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zean Guo
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Dongyang Liu
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ying Zhao
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Nianduan Lu
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ling Li
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- The School of Microelectronics, University of Science and Technology of China Hefei, Beijing, 230026, China
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
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Morino Y, Yokota Y, Hara H, Bando KI, Ono S, Imanishi A, Okada Y, Matsui H, Uemura T, Takeya J, Fukui KI. Rapid improvements in charge carrier mobility at ionic liquid/pentacene single crystal interfaces by self-cleaning. Phys Chem Chem Phys 2020; 22:6131-6135. [PMID: 32124891 DOI: 10.1039/d0cp00149j] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We report the rapid improvement in the carrier mobility of the electric double layer field-effect transistor based on the ionic liquid (IL)/pentacene single crystal interface. Generally, the surface oxidation of the pentacene single crystal is unavoidable, and the considerable degradation restricts the performance of the field-effect transistor. However, the formation of the IL/pentacene single crystal interface resolves this problem by increasing the carrier mobility by approximately twice the initial value within a few hours. Furthermore, frequency-modulation atomic force microscopy revealed that the aforementioned rapid improvement is attributed to the appearance of a clean and flat surface of the pentacene single crystal via the defect-induced spontaneous dissolution of pentacene molecules into the IL.
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Affiliation(s)
- Yusuke Morino
- Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan.
| | - Yasuyuki Yokota
- Surface and Interface Science Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan. and PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Hisaya Hara
- Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan.
| | - Ken-Ichi Bando
- Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan.
| | - Sakurako Ono
- Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan.
| | - Akihito Imanishi
- Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan.
| | - Yugo Okada
- Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba-shi, Chiba 263-8522, Japan
| | - Hiroyuki Matsui
- Research Center for Organic Electronics, Yamagata University, 4-3-16, Jonan, Yonezawa, Yamagata 992-8510, Japan
| | - Takafumi Uemura
- Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
| | - Jun Takeya
- Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Ken-Ichi Fukui
- Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan. and Department of Photomolecular Science, Institute of Molecular Science, Myodaiji, Okazaki, Aichi 444-8585, Japan
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Solution-processable ambipolar organic field-effect transistors with bilayer transport channels. Polym J 2020. [DOI: 10.1038/s41428-020-0313-1] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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Dong J, Liu F, Wang F, Wang J, Li M, Wen Y, Wang L, Wang G, He J, Jiang C. Configuration-dependent anti-ambipolar van der Waals p-n heterostructures based on pentacene single crystal and MoS 2. NANOSCALE 2017; 9:7519-7525. [PMID: 28534906 DOI: 10.1039/c7nr01822c] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Recently, van der Waals heterostructures (vdWHs) have trigged intensive interest due to their novel electronic and optoelectronic properties. The vdWHs could be achieved by stacking two dimensional layered materials (2DLMs) on top of another and vertically kept by van der Waals forces. Furthermore, organic semiconductors are also known to interact via van der Waals forces, which offer an alternative for the fabrication of organic-inorganic p-n vdWHs. However, the performances of organic-inorganic p-n vdWHs produced so far are rather poor, owing to the unmatched electrical property between the 2DLMs and organic polycrystalline films. To make improvements in such novel heterostructure architectures, here we adopt high quality organic single crystals instead of polycrystalline films to construct a pentacene/MoS2 p-n vdWH. The vdWHs show a much higher current density and better anti-ambipolar characteristics with a highest transconductance of 211 nS. Moreover, device configuration-dependent transfer characteristics are demonstrated and a mechanism of a gate bias modulated vertical space charge zone existing at the vertical p-n vdWHs interface is proposed. These findings provide a new route to optimize the organic-inorganic p-n vdWHs and a guideline for studying the intrinsic properties of vdWHs.
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Affiliation(s)
- Ji Dong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, People's Republic of China
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Nakayama Y, Mizuno Y, Hikasa M, Yamamoto M, Matsunami M, Ideta S, Tanaka K, Ishii H, Ueno N. Single-Crystal Pentacene Valence-Band Dispersion and Its Temperature Dependence. J Phys Chem Lett 2017; 8:1259-1264. [PMID: 28240895 DOI: 10.1021/acs.jpclett.7b00082] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The electronic structures of the highest occupied molecular orbital (HOMO) or the HOMO-derived valence bands dominate the transport nature of positive charge carriers (holes) in organic semiconductors. In the present study, the valence-band structures of single-crystal pentacene and the temperature dependence of their energy-momentum dispersion relations are successfully demonstrated using angle-resolved ultraviolet photoelectron spectroscopy (ARUPS). For the shallowest valence band, the intermolecular transfer integral and effective mass of the holes are evaluated as 43.1 meV and 3.43 times the electron rest mass, respectively, at room temperature along the crystallographic direction for which the widest energy dispersion is expected. The temperature dependence of the ARUPS results reveals that the transfer integral values (hole effective mass) are enhanced (reduced) by ∼20% on cooling the sample to 110 K.
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Affiliation(s)
- Yasuo Nakayama
- Department of Pure and Applied Chemistry, Graduate School of Science and Technology, Tokyo University of Science , 2641 Yamazaki, Noda 278-8510, Japan
| | - Yuta Mizuno
- Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
| | - Masataka Hikasa
- Department of Pure and Applied Chemistry, Graduate School of Science and Technology, Tokyo University of Science , 2641 Yamazaki, Noda 278-8510, Japan
| | - Masayuki Yamamoto
- Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
| | - Masaharu Matsunami
- UVSOR Facility, Institute for Molecular Science (IMS), National Institutes of Natural Sciences , 38 Nishigo-Naka, Myodaiji, Okazaki 444-8585, Japan
| | - Shinichiro Ideta
- UVSOR Facility, Institute for Molecular Science (IMS), National Institutes of Natural Sciences , 38 Nishigo-Naka, Myodaiji, Okazaki 444-8585, Japan
| | - Kiyohisa Tanaka
- UVSOR Facility, Institute for Molecular Science (IMS), National Institutes of Natural Sciences , 38 Nishigo-Naka, Myodaiji, Okazaki 444-8585, Japan
| | - Hisao Ishii
- Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
- Center for Frontier Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
| | - Nobuo Ueno
- Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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Yu X, Zhao Z, Zhang J, Guo W, Li L, Liu H, Wang ZL. One-step synthesis of ultrathin nanobelts-assembled urchin-like anatase TiO2nanostructures for highly efficient photocatalysis. CrystEngComm 2017. [DOI: 10.1039/c6ce02241c] [Citation(s) in RCA: 49] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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