Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors

Recent advances in bismuth oxyhalides photocatalysts and their applications

Bismuth oxyhalides photocatalysts exhibit great potential to solve the energy and environmental issues under visible light due to their unique physicochemical and optical properties. However, the photocatalytic activity of pristine bismuth oxyhalides remains unsatisfactory because of their inherent drawbacks. Up to now, many strategies have been used to improve the photocatalytic performance. In this review, the basic mechanism, unique properties and structure of bismuth oxyhalides photocatalysts have been introduced, and the common techniques of synthesis, modification, and main applications have been discussed. Finally, new insights are proposed to meet the future challenges and development of the photocatalysts, which can provide better knowledge for the advancement of the related research areas.

Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm² V^-1 s^-1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 10⁴ A W^-1 together with a detectivity of 10¹³ Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.