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Wang HQ, Xu J, Lin X, Li Y, Kang J, Zheng JC. Determination of the embedded electronic states at nanoscale interface via surface-sensitive photoemission spectroscopy. LIGHT, SCIENCE & APPLICATIONS 2021; 10:153. [PMID: 34315859 PMCID: PMC8316467 DOI: 10.1038/s41377-021-00592-9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2020] [Revised: 06/24/2021] [Accepted: 07/06/2021] [Indexed: 05/18/2023]
Abstract
The fabrication of small-scale electronics usually involves the integration of different functional materials. The electronic states at the nanoscale interface plays an important role in the device performance and the exotic interface physics. Photoemission spectroscopy is a powerful technique to probe electronic structures of valence band. However, this is a surface-sensitive technique that is usually considered not suitable for the probing of buried interface states, due to the limitation of electron-mean-free path. This article reviews several approaches that have been used to extend the surface-sensitive techniques to investigate the buried interface states, which include hard X-ray photoemission spectroscopy, resonant soft X-ray angle-resolved photoemission spectroscopy and thickness-dependent photoemission spectroscopy. Especially, a quantitative modeling method is introduced to extract the buried interface states based on the film thickness-dependent photoemission spectra obtained from an integrated experimental system equipped with in-situ growth and photoemission techniques. This quantitative modeling method shall be helpful to further understand the interfacial electronic states between functional materials and determine the interface layers.
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Affiliation(s)
- Hui-Qiong Wang
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China.
- Department of Physics, Xiamen University Malaysia, Sepang, 43900, Malaysia.
- Department of New Energy Science and Engineering, Xiamen University Malaysia, Sepang, 43900, Malaysia.
| | - Jiayi Xu
- Department of New Energy Science and Engineering, Xiamen University Malaysia, Sepang, 43900, Malaysia
| | - Xiaoyuan Lin
- Department of New Energy Science and Engineering, Xiamen University Malaysia, Sepang, 43900, Malaysia
| | - Yaping Li
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China
- College of Science, Henan University of Technology, Zhengzhou, 450001, China
| | - Junyong Kang
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China
| | - Jin-Cheng Zheng
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China.
- Department of Physics, Xiamen University Malaysia, Sepang, 43900, Malaysia.
- Department of New Energy Science and Engineering, Xiamen University Malaysia, Sepang, 43900, Malaysia.
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Electrons and Polarons at Oxide Interfaces Explored by Soft-X-Ray ARPES. SPECTROSCOPY OF COMPLEX OXIDE INTERFACES 2018. [DOI: 10.1007/978-3-319-74989-1_6] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/03/2022]
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