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Raman S, A RS, M S. Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review. NANOTECHNOLOGY 2023; 34:182001. [PMID: 36640446 DOI: 10.1088/1361-6528/acb320] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Accepted: 01/14/2023] [Indexed: 06/17/2023]
Abstract
Nanowire-based technological advancements thrive in various fields, including energy generation and storage, sensors, and electronics. Among the identified nanowires, silicon nanowires (SiNWs) attract much attention as they possess unique features, including high surface-to-volume ratio, high electron mobility, bio-compatibility, anti-reflection, and elasticity. They were tested in domains of energy generation (thermoelectric, photo-voltaic, photoelectrochemical), storage (lithium-ion battery (LIB) anodes, super capacitors), and sensing (bio-molecules, gas, light, etc). These nano-structures were found to improve the performance of the system in terms of efficiency, stability, sensitivity, selectivity, cost, rapidity, and reliability. This review article scans and summarizes the significant developments that occurred in the last decade concerning the application of SiNWs in the fields of thermoelectric, photovoltaic, and photoelectrochemical power generation, storage of energy using LIB anodes, biosensing, and disease diagnostics, gas and pH sensing, photodetection, physical sensing, and electronics. The functionalization of SiNWs with various nanomaterials and the formation of heterostructures for achieving improved characteristics are discussed. This article will be helpful to researchers in the field of nanotechnology about various possible applications and improvements that can be realized using SiNW.
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Affiliation(s)
- Srinivasan Raman
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
| | - Ravi Sankar A
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
| | - Sindhuja M
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
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Lin R, Hu Q, Liu Z, Pan S, Chen Z, Zhang W, Liu Z, Zhang S, Zhang C. Integrated CuO/Pd Nanospike Hydrogen Sensor on Silicon Substrate. NANOMATERIALS 2022; 12:nano12091533. [PMID: 35564243 PMCID: PMC9106042 DOI: 10.3390/nano12091533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/01/2022] [Revised: 04/24/2022] [Accepted: 04/29/2022] [Indexed: 02/04/2023]
Abstract
A large area of randomly distributed nanospike as nanostructured template was induced by femtosecond (fs) laser on a silicon substrate in water. Copper oxide (CuO) and palladium (Pd) heterostructured nanofilm were coated on the nanospikes by magnetron sputtering technology and vacuum thermal evaporation coating technology respectively for the construction of a p-type hydrogen sensor. Compared with the conventional gas sensor based on CuO working at high temperature, nanostructured CuO/Pd heterostructure exhibited promising detection capability to hydrogen at room temperature. The detection sensitivity to 1% H2 was 10.8%, the response time was 198 s, and the detection limit was as low as 40 ppm, presenting an important application prospect in the clean energy field. The excellent reusability and selectivity of the CuO/Pd heterostructure sensor toward H2 at room temperature were also demonstrated by a series of cyclic response characteristics. It is believed that our room-temperature hydrogen sensor fabricated with a waste-free green process, directly on silicon substrate, would greatly promote the future fabrication of a circuit-chip integrating hydrogen sensor.
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Affiliation(s)
- Ru Lin
- School of Physics and Materials Sciences, Guangzhou University, Guangzhou 510006, China; (R.L.); (Q.H.); (Z.L.); (S.P.); (Z.C.); (W.Z.); (Z.L.)
- School of Electronics and Communication Engineering, Guangzhou University, Guangzhou 510006, China
| | - Qi Hu
- School of Physics and Materials Sciences, Guangzhou University, Guangzhou 510006, China; (R.L.); (Q.H.); (Z.L.); (S.P.); (Z.C.); (W.Z.); (Z.L.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research Graduate School, Guangzhou University, Guangzhou 510555, China
| | - Zuolian Liu
- School of Physics and Materials Sciences, Guangzhou University, Guangzhou 510006, China; (R.L.); (Q.H.); (Z.L.); (S.P.); (Z.C.); (W.Z.); (Z.L.)
| | - Shusheng Pan
- School of Physics and Materials Sciences, Guangzhou University, Guangzhou 510006, China; (R.L.); (Q.H.); (Z.L.); (S.P.); (Z.C.); (W.Z.); (Z.L.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research Graduate School, Guangzhou University, Guangzhou 510555, China
| | - Zhifeng Chen
- School of Physics and Materials Sciences, Guangzhou University, Guangzhou 510006, China; (R.L.); (Q.H.); (Z.L.); (S.P.); (Z.C.); (W.Z.); (Z.L.)
| | - Wei Zhang
- School of Physics and Materials Sciences, Guangzhou University, Guangzhou 510006, China; (R.L.); (Q.H.); (Z.L.); (S.P.); (Z.C.); (W.Z.); (Z.L.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research Graduate School, Guangzhou University, Guangzhou 510555, China
| | - Zhiyu Liu
- School of Physics and Materials Sciences, Guangzhou University, Guangzhou 510006, China; (R.L.); (Q.H.); (Z.L.); (S.P.); (Z.C.); (W.Z.); (Z.L.)
| | - Shaolin Zhang
- School of Physics and Materials Sciences, Guangzhou University, Guangzhou 510006, China; (R.L.); (Q.H.); (Z.L.); (S.P.); (Z.C.); (W.Z.); (Z.L.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research Graduate School, Guangzhou University, Guangzhou 510555, China
- Correspondence: (S.Z.); (C.Z.)
| | - Chengyun Zhang
- School of Physics and Materials Sciences, Guangzhou University, Guangzhou 510006, China; (R.L.); (Q.H.); (Z.L.); (S.P.); (Z.C.); (W.Z.); (Z.L.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research Graduate School, Guangzhou University, Guangzhou 510555, China
- Correspondence: (S.Z.); (C.Z.)
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Srivastava RP, Khang DY. Structuring of Si into Multiple Scales by Metal-Assisted Chemical Etching. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005932. [PMID: 34013605 DOI: 10.1002/adma.202005932] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2020] [Revised: 11/18/2020] [Indexed: 05/27/2023]
Abstract
Structuring Si, ranging from nanoscale to macroscale feature dimensions, is essential for many applications. Metal-assisted chemical etching (MaCE) has been developed as a simple, low-cost, and scalable method to produce structures across widely different dimensions. The process involves various parameters, such as catalyst, substrate doping type and level, crystallography, etchant formulation, and etch additives. Careful optimization of these parameters is the key to the successful fabrication of Si structures. In this review, recent additions to the MaCE process are presented after a brief introduction to the fundamental principles involved in MaCE. In particular, the bulk-scale structuring of Si by MaCE is summarized and critically discussed with application examples. Various approaches for effective mass transport schemes are introduced and discussed. Further, the fine control of etch directionality and uniformity, and the suppression of unwanted side etching are also discussed. Known application examples of Si macrostructures fabricated by MaCE, though limited thus far, are presented. There are significant opportunities for the application of macroscale Si structures in different fields, such as microfluidics, micro-total analysis systems, and microelectromechanical systems, etc. Thus more research is necessary on macroscale MaCE of Si and their applications.
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Affiliation(s)
- Ravi P Srivastava
- Soft Electronic Materials and Devices Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea
| | - Dahl-Young Khang
- Soft Electronic Materials and Devices Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea
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Darmadi I, Nugroho FAA, Langhammer C. High-Performance Nanostructured Palladium-Based Hydrogen Sensors-Current Limitations and Strategies for Their Mitigation. ACS Sens 2020; 5:3306-3327. [PMID: 33181012 PMCID: PMC7735785 DOI: 10.1021/acssensors.0c02019] [Citation(s) in RCA: 56] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/28/2020] [Accepted: 10/27/2020] [Indexed: 12/14/2022]
Abstract
Hydrogen gas is rapidly approaching a global breakthrough as a carbon-free energy vector. In such a hydrogen economy, safety sensors for hydrogen leak detection will be an indispensable element along the entire value chain, from the site of hydrogen production to the point of consumption, due to the high flammability of hydrogen-air mixtures. To stimulate and guide the development of such sensors, industrial and governmental stakeholders have defined sets of strict performance targets, which are yet to be entirely fulfilled. In this Perspective, we summarize recent efforts and discuss research strategies for the development of hydrogen sensors that aim at meeting the set performance goals. In the first part, we describe the state-of-the-art for fast and selective hydrogen sensors at the research level, and we identify nanostructured Pd transducer materials as the common denominator in the best performing solutions. As a consequence, in the second part, we introduce the fundamentals of the Pd-hydrogen interaction to lay the foundation for a detailed discussion of key strategies and Pd-based material design rules necessary for the development of next generation high-performance nanostructured Pd-based hydrogen sensors that are on par with even the most stringent and challenging performance targets.
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Affiliation(s)
- Iwan Darmadi
- Department
of Physics, Chalmers University of Technology, 412 96 Göteborg, Sweden
| | - Ferry Anggoro Ardy Nugroho
- DIFFER
- Dutch Institute for Fundamental Energy Research, De Zaale 20, 5612
AJ Eindhoven, The Netherlands
- Department
of Physics and Astronomy, Vrije Universiteit
Amsterdam, De Boelelaan
1081, 1081 HV Amsterdam, The Netherlands
| | - Christoph Langhammer
- Department
of Physics, Chalmers University of Technology, 412 96 Göteborg, Sweden
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Akbari-Saatlu M, Procek M, Mattsson C, Thungström G, Nilsson HE, Xiong W, Xu B, Li Y, Radamson HH. Silicon Nanowires for Gas Sensing: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E2215. [PMID: 33172221 PMCID: PMC7694983 DOI: 10.3390/nano10112215] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/21/2020] [Revised: 11/02/2020] [Accepted: 11/04/2020] [Indexed: 01/03/2023]
Abstract
The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.
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Affiliation(s)
- Mehdi Akbari-Saatlu
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
| | - Marcin Procek
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
- Department of Optoelectronics, Silesian University of Technology, 2 Krzywoustego St., 44-100 Gliwice, Poland
| | - Claes Mattsson
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
| | - Göran Thungström
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
| | - Hans-Erik Nilsson
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
| | - Wenjuan Xiong
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (W.X.); (B.X.); (Y.L.)
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Buqing Xu
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (W.X.); (B.X.); (Y.L.)
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - You Li
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (W.X.); (B.X.); (Y.L.)
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Henry H. Radamson
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (W.X.); (B.X.); (Y.L.)
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
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Kim H, Yun J, Gao M, Kim H, Cho M, Park I. Nanoporous Silicon Thin Film-Based Hydrogen Sensor Using Metal-Assisted Chemical Etching with Annealed Palladium Nanoparticles. ACS APPLIED MATERIALS & INTERFACES 2020; 12:43614-43623. [PMID: 32869967 DOI: 10.1021/acsami.0c10785] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
This article reports a nanoporous silicon (Si) thin-film-based high-performance and low-power hydrogen (H2) sensor fabricated by metal-assisted chemical etching (MaCE). The nanoporous Si thin film treated with Pd-based MaCE showed improvement over a flat Si thin film sensor in H2 response (ΔI/I0 = 4.36% → 12.4% for 0.1% H2). Furthermore, it was verified that the combination of thermal annealing of Pd and subsequent MaCE on the Si thin film synergistically enhances the H2 sensitivity of the sensor by 65 times as compared to the flat Si thin film sensor (ΔI/I0 = 4.36% → 285% for 0.1% H2). This sensor also showed a very low operating power of 1.62 μW. After the thermal treatment, densely packed Pd nanoparticles agglomerate due to dewetting, which results in a higher surface-to-volume ratio by well-defined etched holes, leading to an increase in sensor response.
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Affiliation(s)
- Hyeonggyun Kim
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Jeonghoon Yun
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
- Singapore Membrane Technology Center, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
| | - Min Gao
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Hyeok Kim
- School of Electrical and Computer Engineering, University of Seoul, Seoul 02592, Republic of Korea
| | - Minkyu Cho
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Inkyu Park
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
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Gao M, Zhao ZJ, Kim H, Jin M, Li P, Kim T, Kang K, Cho I, Jeong JH, Park I. Buffered Oxide Etchant Post-Treatment of a Silicon Nanofilm for Low-Cost and Performance-Enhanced Chemical Sensors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:37128-37136. [PMID: 32814411 DOI: 10.1021/acsami.0c08977] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The high surface-to-volume ratio of nanostructured materials is the key factor for excellent performance when applied to chemical sensors. In order to achieve this by a facile and low-cost fabrication strategy, buffered oxide etchant (BOE) treatment of a silicon (Si)-based sensor was proposed. An n+-n--n+ Si nanofilm structure was treated with a BOE, and palladium nanoparticles (PdNPs) were coated on the n-type Si channel surface via short-time electron beam evaporation to enable a highly sensitive and selective sensing of hydrogen (H2) gas. The BOE treatment effect on lightly doped n-type Si was investigated, and the surface morphology of the etched Si was analyzed. Furthermore, the H2 sensing characterization of PdNP-decorated Si devices with various BOE treatment times was systematically evaluated at room temperature. The results revealed that the surface of n-type Si is roughened by BOE treatment, which can further enhance the H2-sensing performance of Pd-decorated Si. The elaborate study on the BOE-post-treated Si H2 sensor showed that the performance enhancement was stable. The BOE treatment strategy was also applied to the nanopatterned Si sensors, which induced a clear performance enhancement for the H2 sensing.
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Affiliation(s)
- Min Gao
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea
| | - Zhi-Jun Zhao
- Nano-Convergence Mechanical System ResearchCenter, Korea Institute of Machinery and Materials, Daejeon 34113, South Korea
| | - Hyeonggyun Kim
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea
| | - Mingliang Jin
- Institute for Future, Qingdao University, Ningxia Road 308, Qingdao 266071, China
- Institute for Translational Medicine, Medical College of Qingdao University, Dengzhou Road 38, Qingdao 266021, China
| | - Panpan Li
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea
| | - Taehwan Kim
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea
| | - Kyungnam Kang
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea
| | - Incheol Cho
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea
| | - Jun-Ho Jeong
- Nano-Convergence Mechanical System ResearchCenter, Korea Institute of Machinery and Materials, Daejeon 34113, South Korea
| | - Inkyu Park
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea
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Chang S, Lee GJ, Song YM. Recent Advances in Vertically Aligned Nanowires for Photonics Applications. MICROMACHINES 2020; 11:mi11080726. [PMID: 32722655 PMCID: PMC7465648 DOI: 10.3390/mi11080726] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2020] [Revised: 07/22/2020] [Accepted: 07/25/2020] [Indexed: 12/13/2022]
Abstract
Over the past few decades, nanowires have arisen as a centerpiece in various fields of application from electronics to photonics, and, recently, even in bio-devices. Vertically aligned nanowires are a particularly decent example of commercially manufacturable nanostructures with regard to its packing fraction and matured fabrication techniques, which is promising for mass-production and low fabrication cost. Here, we track recent advances in vertically aligned nanowires focused in the area of photonics applications. Begin with the core optical properties in nanowires, this review mainly highlights the photonics applications such as light-emitting diodes, lasers, spectral filters, structural coloration and artificial retina using vertically aligned nanowires with the essential fabrication methods based on top-down and bottom-up approaches. Finally, the remaining challenges will be briefly discussed to provide future directions.
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Myndrul V, Iatsunskyi I. Nanosilicon-Based Composites for (Bio)sensing Applications: Current Status, Advantages, and Perspectives. MATERIALS (BASEL, SWITZERLAND) 2019; 12:E2880. [PMID: 31489913 PMCID: PMC6766027 DOI: 10.3390/ma12182880] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/12/2019] [Revised: 09/02/2019] [Accepted: 09/03/2019] [Indexed: 12/18/2022]
Abstract
This review highlights the application of different types of nanosilicon (nano-Si) materials and nano-Si-based composites for (bio)sensing applications. Different detection approaches and (bio)functionalization protocols were found for certain types of transducers suitable for the detection of biological compounds and gas molecules. The importance of the immobilization process that is responsible for biosensor performance (biomolecule adsorption, surface properties, surface functionalization, etc.) along with the interaction mechanism between biomolecules and nano-Si are disclosed. Current trends in the fabrication of nano-Si-based composites, basic gas detection mechanisms, and the advantages of nano-Si/metal nanoparticles for surface enhanced Raman spectroscopy (SERS)-based detection are proposed.
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Affiliation(s)
- Valerii Myndrul
- NanoBioMedical Centre, Adam Mickiewicz University, 3, Wszechnicy Piastowskiej Str., 61-614 Poznan, Poland.
| | - Igor Iatsunskyi
- NanoBioMedical Centre, Adam Mickiewicz University, 3, Wszechnicy Piastowskiej Str., 61-614 Poznan, Poland.
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Gao M, Cho M, Han HJ, Jung YS, Park I. Palladium-Decorated Silicon Nanomesh Fabricated by Nanosphere Lithography for High Performance, Room Temperature Hydrogen Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:1703691. [PMID: 29369498 DOI: 10.1002/smll.201703691] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2017] [Indexed: 06/07/2023]
Abstract
A hydrogen (H2 ) gas sensor based on a silicon (Si) nanomesh structure decorated with palladium (Pd) nanoparticles is fabricated via polystyrene nanosphere lithography and top-down fabrication processes. The gas sensor shows dramatically improved H2 gas sensitivity compared with an Si thin film sensor without nanopatterns. Furthermore, a buffered oxide etchant treatment of the Si nanomesh structure results in an additional performance improvement. The final sensor device shows fast H2 response and high selectivity to H2 gas among other gases. The sensing performance is stable and shows repeatable responses in both dry and high humidity ambient environments. The sensor also shows high stability without noticeable performance degradation after one month. This approach allows the facile fabrication of high performance H2 sensors via a cost-effective, complementary metal-oxide-semiconductor (CMOS) compatible, and scalable nanopatterning method.
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Affiliation(s)
- Min Gao
- Department of Mechanical Engineering, Korea Advanced Institute of Technology, Daejeon, 34141, Korea
| | - Minkyu Cho
- Department of Mechanical Engineering, Korea Advanced Institute of Technology, Daejeon, 34141, Korea
| | - Hyeuk-Jin Han
- Department of Material Science and Engineering, Korea Advanced Institute of Technology, Daejeon, 34141, Korea
| | - Yeon Sik Jung
- Department of Material Science and Engineering, Korea Advanced Institute of Technology, Daejeon, 34141, Korea
| | - Inkyu Park
- Department of Mechanical Engineering, Korea Advanced Institute of Technology, Daejeon, 34141, Korea
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Mao Y, Zhao Q, Pan T, Shi J, Jiang S, Chen M, Zhou B, Tian Y. Platinum porphyrin/3-(trimethoxysily)propylmethacrylate functionalized flexible PDMS micropillar arrays as optical oxygen sensors. NEW J CHEM 2017. [DOI: 10.1039/c7nj01187c] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
A PtTPP/TPMA functionalized PDMS-based micropillar array film was presented as a flexible optical oxygen sensor with efficiently improved sensing capabilities.
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Affiliation(s)
- Yongyun Mao
- Institute of Applied Physics and Materials Engineering
- University of Macau
- Avenida da Universidade
- Taipa
- China
| | - Qian Zhao
- Department of Materials Science and Engineering
- South University of Science and Technology of China
- Shenzhen
- China
- Key Laboratory of Supramolecular Structure and Materials
| | - Tingting Pan
- Department of Materials Science and Engineering
- South University of Science and Technology of China
- Shenzhen
- China
- State Key Laboratory of Quality Research in Chinese Medicine
| | - Jiayan Shi
- Department of Materials Science and Engineering
- South University of Science and Technology of China
- Shenzhen
- China
| | - Shimei Jiang
- Key Laboratory of Supramolecular Structure and Materials
- Jilin University
- Changchun 130012
- P. R. China
| | - Meiwan Chen
- State Key Laboratory of Quality Research in Chinese Medicine
- Institute of Chinese Medical Sciences
- University of Macau
- Avenida da Universidade
- Taipa
| | - Bingpu Zhou
- Institute of Applied Physics and Materials Engineering
- University of Macau
- Avenida da Universidade
- Taipa
- China
| | - Yanqing Tian
- Department of Materials Science and Engineering
- South University of Science and Technology of China
- Shenzhen
- China
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