Comparison of three transmission methods for integrated optical waveguide propagation loss measurement

High-efficiency mid-infrared InGaAs/InP arrayed waveguide gratings

Photonic integrated circuits and mid-infrared quantum cascade lasers have attracted significant attention over the years because of the numerous applications enabled by these compact semiconductor chips. In this paper, we demonstrate low loss passive waveguides and highly efficient arrayed waveguide gratings that can be used, for example, to beam combine infrared (IR) laser arrays. The waveguide structure used consists of an In_0.53Ga_0.47As core and InP cladding layers. This material system was chosen because of its compatibility with future monolithic integration with quantum cascade lasers. Different photonic circuits were fabricated using standard semiconductor processes, and experiments conducted with these chips demonstrated low-loss waveguides with an estimated propagation loss of ∼ 1.2 dB/cm as well as micro-ring resonators with an intrinsic Q-factor of 174,000. Arrayed waveguide gratings operating in the 5.15-5.34 µm range feature low insertion loss and non-uniformity of ∼ 0.9 dB and ∼ 0.6 dB, respectively. The demonstration of the present photonic circuits paves the path toward monolithic fabrication of compact infrared light sources with advanced functionalities beneficial to many chemical sensing and high-power applications.

A Barium Titanate-on-Oxide Insulator Optoelectronics Platform

Electro-optic modulators are among the most important building blocks in optical communication networks. Lithium niobate, for example, has traditionally been widely used to fabricate high-speed optical modulators due to its large Pockels effect. Another material, barium titanate, nominally has a 50 times stronger r-parameter and would ordinarily be a more attractive material choice for such modulators or other applications. In practice, barium titanate thin films for optical waveguide devices are usually grown on magnesium oxide due to its low refractive index, allowing vertical mode confinement. However, the crystal quality is normally degraded. Here, a group of scandate-based substrates with small lattice mismatch and low refractive index compared to that of barium titanate is identified, thus concurrently satisfying high crystal quality and vertical optical mode confinement. This work provides a platform for nonlinear on-chip optoelectronics and can be promising for waveguide-based optical devices such as Mach-Zehnder modulators, wavelength division multiplexing, and quantum optics-on-chip.

Supercontinuum generation in dispersion engineered AlGaAs-on-insulator waveguides

The effect of engineering the dispersion of AlGaAs-on-insulator (AlGaAs-OI) waveguides on supercontinuum generation is investigated at telecom wavelengths. The pronounced effect the waveguide width has on the nonlinear dynamics governing the supercontinua is systematically analyzed and the coherence of the spectra verified with numerical simulations. Using dispersion engineered AlGaAs-OI waveguides, broadband supercontinua were readily obtained for pulse energies of [Formula: see text] and a device length of only 3 mm. The results presented here, further understanding of the design and fabrication of this novel platform and describe the soliton and dispersive wave dynamics responsible for supercontinuum generation. This study showcases the potential of AlGaAs-OI for exploring fundamental physics and realizing highly efficient, compact, nonlinear devices.

Reflection Airy distribution of a Fabry-Pérot resonator and its application in waveguide loss measurement

The reflection Airy distribution (RAD) of a Fabry-Pérot (F-P) resonator is deduced with the consideration of the mode coupling between the cavity resonance field and the initial back-reflected field at the input F-P resonator facet, as well as the influence of the loss/gain factor. A waveguide loss/gain measurement method is proposed based on the measurement of the finesse of the RAD, which is intrinsically free from the influence of the coupling loss and the substrate scattering noise. The waveguide loss can be measured with a simple single-facet coupling setup, considerably reducing the coupling difficulty and the complexity of the measurement system while achieving the same or better measurement accuracy as that of the transmission F-P method.

Towards a photonic mid-infrared nulling interferometer in chalcogenide glass

Nulling interferometry enables astronomers to advance beyond the resolving power of ground-based telescopes with the goal of directly detecting exo-planets. By diminishing the overwhelming emission of the host star through destructive interference, radiation from young companions can be observed. The atmospheric transmission window centered around 4 μm wavelength is of particular interest because it has a favorable contrast between star and planet as well as a reduced atmospheric disturbance. For robustness and high stability, it is desirable to employ integrated devices based on optical waveguide technology. Their development is hindered at this wavelength range due to the lack of suitable host materials and compatible fabrication techniques to create low-loss photonic devices. This paper details our work on femtosecond laser direct-written optical waveguides and key components for an on-chip nulling interferometer inside gallium lanthanum sulphur glass. By combining cumulative heating fabrication with the multiscan technique, single-mode optical waveguides with propagation losses as low as 0.22 ± 0.02 dB/cm at 4 μm and polarization-dependent losses of < 0.1 dB/cm were realized. Furthermore, S-bends with negligible bending loss and broadband Y-splitters with 50/50 power division across a 600 nm wavelength window (3.6 - 4.2 μm) and low losses of < 0.5 dB are demonstrated. Directional couplers with an equal splitting ratio complement these main building blocks to create a future compact nulling interferometer with a total projected intrinsic loss of < 1 dB, a value that is sufficient to perform future on-sky experiments in relatively short observation runs on ground-based telescopes.

Second-harmonic generation in AlGaAs-on-insulator waveguides

Second-harmonic generation is demonstrated in AlGaAs-on-insulator waveguides at telecom wavelengths. Using this material platform, a maximum internal normalized efficiency of 1202±55%  W^-1 cm^-2 is achieved for a 100 fs pulsed excitation wavelength at 1560 nm. This finding is important towards enabling new chip-scale devices for sensing, metrology, and quantum optics.

Low-loss demonstration and refined characterization of silicon arrayed waveguide gratings in the near-infrared

A resonator is characterized with two cascaded arrayed waveguide gratings (AWGs) in a ring formation. From this structure, the on-chip transmittance of a single AWG is extracted, independent of coupling efficiency. It provides improved measurement accuracy, which is essential for developing AWGs with extremely low loss. Previous methods normalize the off-chip AWG transmittance to that of a reference waveguide with identical coupling, leading to an uncertainty of ∼14 % on the extracted on-chip AWG transmittance. It is shown here that the proposed "AWG-ring" method reduces this value to ∼3 %. A low-loss silicon AWG and an AWG-ring are fabricated. Channel losses with <2 dB are found, with a crosstalk per channel approaching -30 dB. Such an efficient wavelength multiplexing device is beneficial for the integration of spectroscopic sensors, multi-spectral lasers, and further progress in optical communication systems.

Germanium-on-SOI waveguides for mid-infrared wavelengths

We report on the development of Germanium-on-SOI waveguides for mid-infrared wavelengths. The strip waveguides have been formed in 0.85 and 2 μm thick Ge grown on SOI substrate with 220 nm thick Si overlayer. The propagation loss for various waveguide widths has been measured using the Fabry-Perot method with temperature tuning. The minimum loss of ~8 dB/cm has been achieved for 0.85 μm thick Ge core using 3.682 μm laser excitation. The transparency of these waveguides has been measured up to at least 3.82 μm.

Large-aperture subwavelength grating couplers

Subwavelength nanostructure grating couplers fabricated on silicon-on-insulator substrates are used to simplify the fabrication process while maintaining high coupling efficiency. The main obstacle for their application in photonic integrated circuits is the small aperture size of the nanostructure when TE polarization is involved, since they are difficult to achieve with 193 nm deep-ultraviolet lithography and cause problems in inductively coupled plasma etching. A larger lateral period has been used to increase the aperture size. Here, we propose that decreasing the effective index of the nanostructure can also enlarge the aperture size. We analyze the two methods in detail with a rectangle-hole nanostructure and 220 nm thick waveguide layer, aiming at TE polarization centered at 1560 nm. We find performance degenerations for large lateral periods, and this can be simply compensated by adjusting the width of the rectangle hole. The minimum linewidth of the nanostructure can reach 240 nm, while the coupling efficiency is just slightly decreased. The backreflections of a large-aperture grating increase but stay in the same order with ordinary ones, and we also show that this can be overcome by apodizing the grating structure. Finally, we experimentally demonstrate the designed large-aperture grating couplers and the coupling efficiencies are higher than 35%, and reach a rectangle-hole width.

Low loss ridge waveguides in lithium niobate thin films by optical grade diamond blade dicing

We report on the fabrication and characterization of ridge waveguides in lithium niobate thin films by diamond blade dicing. The lithium niobate thin films with a thickness of 1 µm were fabricated by bonding a He-implanted lithium niobate wafer to a SiO(2)-coated lithium niobate wafer and crystal ion slicing. Propagation losses of 1.2 dB/cm for TE and 2.8 dB/cm for TM polarization were measured at 1550 nm for a 9.28 mm long and 2.1 µm wide waveguide using the Fabry-Perot method.

Low loss mid-infrared ZBLAN waveguides for future astronomical applications

Photonic technologies will be at the heart of future terrestrial planet hunting interferometers. In particular the mid-infrared spectral region between 3.5 - 4.2 μm is the ideal window for hunting for young extra-solar planets, since the planet is still hot from its formation and thus offers a favorable contrast with respect to the parent star compared to other spectral regions. This paper demonstrates two basic photonic building blocks of such an instrument, namely single-mode waveguides with propagation losses as low as 0.29±0.03 dB/cm at a wavelength of 4 μm as well as directional couplers with a constant splitting ratio across a broad wavelength band of 500 nm. The devices are based on depressed cladding waveguides inscribed into ZBLAN glass using the femtosecond laser direct-write technique. This demonstration is the first stepping stone towards the realization of a high transmission mid-infrared nulling interferometer.

980nm pumped erbium doped tellurium oxide planar rib waveguide laser and amplifier with gain in S, C and L band

A thin film based erbium doped tellurium oxide (TeO₂) waveguide amplifier producing gain from 1500nm to 1640nm when pumped at 980nm is demonstrated. At measured internal gains exceeding 14dB lasing due to end facet reflection set in producing the first tellurite waveguide laser. High gains were observed despite significant upconversion, whose impact appears to be mitigated to some extent by residual OH contamination. The device displayed no photosensitive effects from either the high pumping intensities used or the intracavity intensity at 1550nm.

Optical properties of silicon germanium waveguides at telecommunication wavelengths

We present a systematic experimental study of the linear and nonlinear optical properties of silicon-germanium (SiGe) waveguides, conducted on samples of varying cross-sectional dimensions and Ge concentrations. The evolution of the various optical properties for waveguide widths in the range 0.3 to 2 µm and Ge concentrations varying between 10 and 30% is considered. Finally, we comment on the comparative performance of the waveguides, when they are considered for nonlinear applications at telecommunications wavelengths.

Low-loss germanium strip waveguides on silicon for the mid-infrared

Mid-infrared photonics in silicon needs low-loss integrated waveguides. While monocrystalline germanium waveguides on silicon have been proposed, experimental realization has not been reported. Here we demonstrate a germanium strip waveguide on a silicon substrate. It is designed for single mode transmission of light in transverse magnetic (TM) polarization generated from quantum cascade lasers at a wavelength of 5.8 μm. The propagation losses were measured with the Fabry-Perot resonance method. The lowest achieved propagation loss is 2.5 dB/cm, while the bending loss is measured to be 0.12 dB for a 90° bend with a radius of 115 μm.

CMOS compatible integration of Si/SiO2 multilayer GRIN lens optical mode size converter to Si wire waveguide

We present a CMOS compatible mass manufacturable, compact Si/SiO(2) multilayer GRIN lens mode size converter from standard single mode fiber to 300 nm-thick Si waveguide. The fiber-to-GRIN lens coupling loss is 2.6 ± 0.3 dB (coupling efficiency: 51~60%) with optimized focal length of 11.6~11.8 μm and Si/SiO(2) multilayer thickness of 7.4 μm.

Waveguide mode filters fabricated using laser-induced forward transfer

Titanium (Ti)-in-diffused lithium niobate waveguide mode filters fabricated using laser-induced forward transfer followed by thermal diffusion are presented. The mode control was achieved by adjusting the separation between adjacent Ti segments thus varying the average value of the refractive index along the length of the in-diffused channel waveguides. The fabrication details, loss measurements and near-field optical characterization of the mode filters are presented. Modeling results regarding the device performance are also discussed.

Ultra-compact multilayer Si/SiO(2) GRIN lens mode-size converter for coupling single-mode fiber to Si-wire waveguide

We report on the fabrication and experimental demonstration of optical mode size transformation between standard single-mode fiber and 0.26 μm-thick Si-waveguide by 12 μm-thick Si/SiO(2) multilayer on-chip GRIN lens of lengths 16 μm or 24 μm butt-joint to 10 μm-wide terminated Si-waveguide. The overall coupling loss of the coupler was measured to be 3.45 dB in which the Fresnel reflection loss is estimated to be 2dB at the GRIN-lens/air interface. The on-chip integrated GRIN lens opens up the feasibility of a low cost passive aligned fiber-pigtailed electronic-photonics integrated circuits platform.

Modified Fabry-Perot interferometric method for waveguide loss measurement

An extension to the Fabry-Perot interferometric method is demonstrated to calculate the optical loss and the reflectivity for optical waveguides simultaneously. The method uses an excitation of the waveguide with a broadband amplified spontaneous emission source (a superluminescent diode in our case) and curve fitting to account for the change of input power, thereby simplifying the measurement procedure. The use of a broadband source as opposed to tunable lasers allows for simultaneous measurements over multiple wavelengths and decreased sensitivity to reflections in the cavity. Further, waveguides of different lengths are measured to calculate the optical loss and the reflectivity simultaneously. It is shown that, if the value for reflectivity is assumed, there could be a large error in the measurement of loss especially for short waveguides. Optical loss for ridge waveguides is measured and compared by using a tunable laser as the input source. The method can be used for a generic case where it is suspected that the input power changes during the measurement.

Low loss photonic components in high index bismuth borate glass by femtosecond laser direct writing

Single mode, low loss waveguides were fabricated in high index bismuth borate glass by femtosecond laser direct writing. A specific set of writing parameters leading to waveguides perfectly mode matched to standard single-mode fibers at 1.55 microm with an overall insertion loss of approximately 1 dB and with propagation loss below 0.2 dB/cm was identified. Photonic components such as Y-splitters and directional couplers were also demonstrated. A close agreement between their performances and theoretical predictions based upon the characterization of the waveguide properties is shown. Finally, the nonlinear refractive index of the waveguides has been measured to be 6.6 x 10(-15) cm(2)/W by analyzing self-phase modulation of the propagating femtosecond laser pulse at the wavelength of 1.46 microm. Broadening of the transmitted light source as large as 500 nm was demonstrated through a waveguide with the length of 1.8 cm.