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Wu J, Wang ZM, Dorogan VG, Li S, Mazur YI, Salamo GJ. Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces. NANOSCALE 2011; 3:1485-1488. [PMID: 21384043 DOI: 10.1039/c0nr00973c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The morphology and optical properties of In(0.35)Ga(0.65)As/GaAs quantum dots (QDs) grown on (210), (311)A, (711)A, (731) and (100) substrates are investigated. QDs formed on (210) and (731) oriented substrates are grown by molecular beam epitaxy. Regular QDs are observed on (100), (311)A, and (711)A. Randomly distributed QDs and comet-shaped QDs form on (210) and (731) substrates, respectively. A high density of QDs on the order of 10(11) cm(-2) are obtained from (711)A. The optical measurement shows a spectrum linewidth (FWHM = 74.3 nm) of QDs on GaAs (210) three times wider than GaAs (100) substrate. Long exciton decay times, over 1 ns, are also measured by time-resolved photoluminescence technique for all samples. Our results demonstrate the potential for QDs on GaAs high index substrates for wideband applications.
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Affiliation(s)
- Jiang Wu
- Arkansas Institute of Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
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Li Z, Wu J, Wang ZM, Fan D, Guo A, Li S, Yu SQ, Manasreh O, Salamo GJ. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications. NANOSCALE RESEARCH LETTERS 2010; 5:1079-1084. [PMID: 20672090 PMCID: PMC2893973 DOI: 10.1007/s11671-010-9605-2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2010] [Accepted: 04/06/2010] [Indexed: 05/26/2023]
Abstract
The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.
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Affiliation(s)
- Zhenhua Li
- Arkansas Institute For Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Jiang Wu
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Zhiming M Wang
- Arkansas Institute For Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Dongsheng Fan
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Aqiang Guo
- Arkansas Institute For Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Shibing Li
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Shui-Qing Yu
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Omar Manasreh
- Arkansas Institute For Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Gregory J Salamo
- Arkansas Institute For Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
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