Electronic structure of AlCrN films investigated using various photoelectron spectroscopies and ab initio calculations

Influence of Nitrogen Content and Bias Voltage on Residual Stress and the Tribological and Mechanical Properties of CrAlN Films

This study deposited CrAlN coatings from Al50Cr50 targets using high-power impulse magnetron sputtering, with a focus on the effects of nitrogen content and substrate bias voltage on the deposition rate, microstructure, crystal orientation, residual stress, and mechanical properties of the coating. The nitrogen content was adjusted by varying the N2/Ar flow ratio between 20% and 140%. Increasing the nitrogen flow rate during deposition led to corresponding decreases in the deposition rate and film thickness. X-ray diffractometer (XRD) analysis revealed that a low N2/Ar flow ratio (<40%) resulted in amorphous CrAlN, whereas a higher ratio (>40%) resulted in an face-centered cubic (FCC) phase. Bias voltage also had considerable influence on the residual stress and grain size. A refined grain structure and high internal stress resulted in hard CrAlN coatings. Among the various parameter combinations evaluated in this study, the highest hardness (35.4 GPa) and highest elastic modulus (426 GPa) were obtained using an N2/Ar flow ratio of 100% and a bias voltage of −120 V.

Crystallographic and electronic properties of AlCrN films that absorb visible light

We investigate the crystallographic and electronic properties of wurtzite Cr-doped AlN (AlCrN) films (Cr ≤12.0%) that absorb visible light. We confirmed that the films consist of wurtzite columnar single crystals that are densely packed, c-axis oriented, and exhibit a random rotation along the a-axis in plane by using transmission electron microscopy. The oxidation state of Cr was found to be 3+ using Cr K-edge X-ray absorption near edge structure, which implies that Cr can be a substitute for Al3+ in AlN. The first nearest neighbor distances estimated using Cr K-edge extended X-ray absorption fine structure (EXAFS) were found to be nearly isotropic for incident light with electric fields that are parallel and perpendicular to the plane. The results of ab initio lattice relaxation calculations for the model of wurtzite Al1-xCrxN supercell where Cr replaces Al support the EXAFS results. The calculations for the model showed that additional energy bands are formed in the band gap of AlN, in which the Fermi energy (EF ) is present. As expected from the calculation results, the electrical conductivity increases with increase in the Cr concentration, implying that the density of states at EF increases monotonically. From these results, we can conclude that AlCrN films are an intermediate band material with respect to their crystallographic and electric properties.