Electronic properties of LaAlO3/SrTiO3 n-type interfaces: a GGA+U study

Advantages of Ferroelectrics as a Component of Heterostructures for Electronic Purposes: A DFT Insight

The main advantage of using ferroelectric materials as a component of complex heterostructures is the ability to tune various properties of the whole system by means of an external electric field. In particular, the electric field may change the polarization direction within the ferroelectric material and consequently affect the structural properties, which in turn affects the electronic and magnetic properties of the neighboring material. In addition, ferroelectrics allow the electrostriction phenomenon to proceed, which is promising and can be used to affect the magnetic states of the interface state in the heterostructure through a magnetic component. The interfacial phenomena are of great interest, as they provide extended functionality useful for next-generation electronic devices. Following the idea of utilizing ferroelectrics in heterostructural components in the present works, we consider 2DEG, the Rashba effect, the effect of magnetoelectric coupling, and magnetostriction in order to emphasize the advantages of such heterostructures as components of devices. For this purpose, model systems of LaMnO3/BaTiO3, La2CuO4/BaTiO3, Bi/BaTiO3, and Bi/PbTiO3, Fe/BaTiO3 heterostructures are investigated using density functional theory calculations.

DFT Insight into Conductive and Magnetic Properties of Heterostructures with BaTiO3 Overlayer

The ab initio calculations of a heterostructure based on the ferroelectric phase of barium titanate and dielectrics lanthanum manganese (LaMnO₃) or silicon (Si) are presented. We analyze structures of BaTiO₃/LaMnO₃ and BaTiO₃/Si interfaces, investigate magnetic properties and the impact of ferroelectric polarization. The use of ferroelectrics in the heterostructure plays a crucial role; in particular, ferroelectric polarization leads to the appearance of the conducting state at the interface and in the layers close to it. We show that defects (here, oxygen vacancies) incorporated into the system may change the electronic and magnetic properties of a system. Experimental results of magnetic susceptibility measurements for the Ba_0.8Sr_0.2TiO₃/LaMnO₃ heterostructure are also presented. It is shown that a correlation between the behavior of the ferromagnetic ordering and the resistance takes place. In addition, the ferromagnetic ordering at the interface of the heterostructure can be associated with the exchange interaction through current carriers that appear in high carrier concentration regions.

Oxygen vacancies and hydrogen doping in LaAlO3/SrTiO3 heterostructures: electronic properties and impact on surface and interface reconstruction

We investigate the effect of oxygen vacancies and hydrogen dopants at the surface and inside slabs of [Formula: see text], [Formula: see text], and [Formula: see text]/[Formula: see text] heterostructures on the electronic properties by means of electronic structure calculations as based on density functional theory. Depending on the concentration, the presence of these defects in a [Formula: see text] slab can suppress the surface conductivity. In contrast, in insulating [Formula: see text] slabs already very small concentrations of oxygen vacancies or hydrogen dopant atoms induce a finite occupation of the conduction band. Surface defects in insulating [Formula: see text]/[Formula: see text] heterostructure slabs with three [Formula: see text] overlayers lead to the emergence of interface conductivity. Calculated defect formation energies reveal strong preference of hydrogen dopant atoms for surface sites for all structures and concentrations considered. Strong decrease of the defect formation energy of hydrogen adatoms with increasing thickness of the [Formula: see text] overlayer and crossover from positive to negative values, taken together with the metallic conductivity induced by hydrogen adatoms, seamlessly explains the semiconductor-metal transition observed for these heterostructures as a function of the overlayer thickness. Moreover, we show that the potential drop and concomitant shift of (layer resolved) band edges is suppressed for the metallic configuration. Finally, magnetism with stable local moments, which form atomically thin magnetic layers at the interface, is generated by oxygen vacancies either at the surface or the interface, or by hydrogen atoms buried at the interface. In particular, oxygen vacancies in the [Formula: see text] interface layer cause drastic downshift of the 3d e _g states of the Ti atoms neighboring the vacancies, giving rise to strongly localized magnetic moments, which add to the two-dimensional background magnetization.

BEEF-vdW+U method applied to perovskites: thermodynamic, structural, electronic, and magnetic properties

The recently developed BEEF-vdW exchange-correlation method provides a reasonably reliable description of both long-range van der Waals interactions and short-range covalent bonding between molecules and surfaces. However, this method still suffers from the excessive electron delocalization that is connected with the self-interaction error and, consequently, the calculated chemical and physical properties such as formation energy and band gap deviate markedly from the experimental values, especially when strongly correlated systems are under investigation. In this contribution, BEEF-vdW+U calculations have been performed to study the thermodynamic, structural, electronic, and magnetic properties of La-based perovskites. An effective interaction parameter [Formula: see text] and an energy adjustment [Formula: see text] are determined simultaneously by a mixing GGA and GGA+U method, where the enthalpy or Gibbs free energy of formation of oxides containing a transition metal in different oxidation states are fitted to available experimental data. The [Formula: see text] is found to have its origin in the fact that the GGA+U method gives rise to the offsets in the total energy that include not only the desired physical correction but also an arbitrary contribution. Calculated results indicate that the BEEF-vdW method provides a more accurate description of the bonding in the O₂ molecule than the PBE method and has generally smaller [Formula: see text] values for the 3d-block transition metals, thereby giving rise to band gaps and magnetic moments that are in better agreement with the experimentally measured values.

Electronic properties and surface reactivity of SrO-terminated SrTiO3 and SrO-terminated iron-doped SrTiO3

Surface reactivity and near-surface electronic properties of SrO-terminated SrTiO₃ and iron doped SrTiO₃ were studied with first principle methods. We have investigated the density of states (DOS) of bulk SrTiO₃ and compared it to DOS of iron-doped SrTiO₃ with different oxidation states of iron corresponding to varying oxygen vacancy content within the bulk material. The obtained bulk DOS was compared to near-surface DOS, i.e. surface states, for both SrO-terminated surface of SrTiO₃ and iron-doped SrTiO₃. Electron density plots and electron density distribution through the entire slab models were investigated in order to understand the origin of surface electrons that can participate in oxygen reduction reaction. Furthermore, we have compared oxygen reduction reactions at elevated temperatures for SrO surfaces with and without oxygen vacancies. Our calculations demonstrate that the conduction band, which is formed mainly by the d-states of Ti, and Fe-induced states within the band gap of SrTiO₃, are accessible only on TiO₂ terminated SrTiO₃ surface while the SrO-terminated surface introduces a tunneling barrier for the electrons populating the conductance band. First principle molecular dynamics demonstrated that at elevated temperatures the surface oxygen vacancies are essential for the oxygen reduction reaction.