Functional thiols as repair and doping agents of defective MoS2 monolayers

First-principles study of sulfur vacancy concentration effect on the electronic structures and hydrogen evolution reaction of MoS2

Defect engineering has been widely used in experiments to modulate the electrocatalytic properties of molybdenum disulfide (MoS₂). However, the effect of vacancy concentration on the vacancy distribution, electronic properties, and hydrogen evolution reaction (HER) activity remains elusive. Herein, we perform density functional theory (DFT) studies to investigate defective MoS₂ with different numbers of sulfur vacancies. In the case of low S-vacancy concentration, the vacancies prefer to agglomerate rather than being dispersed, while at the higher-vacancy concentration, the combination of local point defect and clustered vacancy chain is preferred. The coupling between S-vacancies leads to decreased band gap and increased Mo-H adsorption strength with increasing vacancy concentration. The optimal HER activity is identified to occur below vacancy concentration of 12.50%. Our work provides an atomic-level understanding about the role of S-vacancies in the HER performance of MoS₂, and offers useful guidelines for the design of defective MoS₂ and other TMDs electrocatalysts.

Surface Defect Engineering of MoS2 for Atomic Layer Deposition of TiO2 Films

In this manuscript, we combine experimental and computational approaches to study the atomic layer deposition (ALD) of dielectrics on MoS₂ surfaces for a very common class of ALD precursors, the alkylamines. More specifically, we study the thermal ALD of TiO₂ from TDMAT and H₂O. Depositions on as-produced chemical vapor deposition MoS₂ flakes result in discontinuous films. Surface treatment with mercaptoethanol (ME) does not improve the surface coverage, and DFT calculations show that ME reacts very weakly with the MoS₂ surface. However, creation of sulfur vacancies on the MoS₂ surface using Ar ion beam irradiation results in much improved surface coverage for films with a nominal thickness of 6 nm, and the calculations show that TDMAT reacts moderately with either single or extended sulfur vacancies. ME also reacts with the vacancies, and defect-rich surfaces treated with ME provide an equally good surface for the nucleation of ALD TiO₂ films. The computational studies however reveal that the creation of surface vacancies results in the introduction of gap states that may deteriorate the electronic properties of the stack. Treatment with ME results in the complete removal of the gap states originating from the most commonly found single vacancies and reduces substantially the density of states for double and line vacancies. As a result, we provide a pathway for the deposition of high-quality ALD dielectrics on the MoS₂ surfaces, which is required for the successful integration of these 2D materials in functional devices.

Enhanced two-photon absorption and two-photon luminescence in monolayer MoS2 and WS2 by defect repairing

In this work, we investigated the nonlinear optical properties of monolayer MoS₂ and WS₂ modulated by defect engineering via chemical treatment. The results demonstrate that the two-photon luminescence (TPL) and two-photon absorption (TPA) coefficient were remarkably improved after the repair of sulfur vacancies for both monolayer MoS₂ and WS₂. After the chemical treatment, the nonradiative relaxation path dominant in pristine monolayer MoS₂ is significantly alleviated, resulting in enhanced TPL. Our work affords an effective way to tailor the nonlinear absorption, luminescence and relaxation properties of sulfur-based two-dimensional metal dichalcogenides by defect engineering.