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Dawson W, Degomme A, Stella M, Nakajima T, Ratcliff LE, Genovese L. Density functional theory calculations of large systems: Interplay between fragments, observables, and computational complexity. WIRES COMPUTATIONAL MOLECULAR SCIENCE 2022. [DOI: 10.1002/wcms.1574] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
| | | | - Martina Stella
- Department of Materials Imperial College London London UK
| | | | | | - Luigi Genovese
- Université Grenoble Alpes, INAC‐MEM, L_Sim Grenoble France
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Nakata A, Baker JS, Mujahed SY, Poulton JTL, Arapan S, Lin J, Raza Z, Yadav S, Truflandier L, Miyazaki T, Bowler DR. Large scale and linear scaling DFT with the CONQUEST code. J Chem Phys 2020; 152:164112. [DOI: 10.1063/5.0005074] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023] Open
Affiliation(s)
- Ayako Nakata
- International Centre for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Jack S. Baker
- London Centre for Nanotechnology, University College London, 17-19 Gordon St., London WC1H 0AH, United Kingdom
- Department of Physics & Astronomy, University College London, Gower St., London WC1E 6BT, United Kingdom
| | - Shereif Y. Mujahed
- London Centre for Nanotechnology, University College London, 17-19 Gordon St., London WC1H 0AH, United Kingdom
- Department of Physics & Astronomy, University College London, Gower St., London WC1E 6BT, United Kingdom
| | - Jack T. L. Poulton
- London Centre for Nanotechnology, University College London, 17-19 Gordon St., London WC1H 0AH, United Kingdom
- Department of Physics & Astronomy, University College London, Gower St., London WC1E 6BT, United Kingdom
| | - Sergiu Arapan
- International Centre for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Jianbo Lin
- International Centre for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Zamaan Raza
- International Centre for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Sushma Yadav
- International Centre for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Lionel Truflandier
- Institut des Sciences Moléculaires, Université Bordeaux, 351 Cours de la Libération, 33405 Talence, France
| | - Tsuyoshi Miyazaki
- International Centre for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - David R. Bowler
- International Centre for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- London Centre for Nanotechnology, University College London, 17-19 Gordon St., London WC1H 0AH, United Kingdom
- Department of Physics & Astronomy, University College London, Gower St., London WC1E 6BT, United Kingdom
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Kumarasinghe C, Bowler DR. DFT study of undoped and As-doped Si nanowires approaching the bulk limit. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:035304. [PMID: 31585449 DOI: 10.1088/1361-648x/ab4b3c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The electronic properties of pure and As-doped Si nanowires (NWs) with radii up to 9.53 nm are studied using large scale density functional theory (DFT) calculations. We show that, for the undoped NWs, the DFT bandgap reduces with increasing diameter and converges to its bulk value, a trend in agreement with experimental data. Moreover, we show that the atoms closest to the surface of the nanowire (NW) contribute less to the states near the band edges, when compared with atoms close to the centre; this is shown to be due to differences in Si-Si atomic distances, as well as surface passivation effects. When considering As-doped Si NWs we show that dopant placement within the NW plays an important role in deciding electronic properties. We show that a low velocity band is introduced by As doping, in the gap, but close to the conduction band edge. The curvature of this low velocity band depends on the dopant location, with the curvature reducing when the dopant is placed closer to the center. We also show that asymmetry of dopant location with the NW leads to splitting of the valence band edge.
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Affiliation(s)
- Chathurangi Kumarasinghe
- London Centre for Nanotechnology, University College London, 17-19 Gordon St, London, WC1H 0AH, UK
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