Two-photon photoemission spectroscopy of unoccupied electronic states at CuPc/PTCDA/Ag(1 1 1) interfaces

Robust Dipolar Layers between Organic Semiconductors and Silver for Energy-Level Alignment

The interface between a metal electrode and an organic semiconductor (OS) layer has a defining role in the properties of the resulting device. To obtain the desired performance, interlayers are introduced to modify the adhesion and growth of OS and enhance the efficiency of charge transport through the interface. However, the employed interlayers face common challenges, including a lack of electric dipoles to tune the mutual position of energy levels, being too thick for efficient electronic transport, or being prone to intermixing with subsequently deposited OS layers. Here, we show that monolayers of 1,3,5-tris(4-carboxyphenyl)benzene (BTB) with fully deprotonated carboxyl groups on silver substrates form a compact layer resistant to intermixing while capable of mediating energy-level alignment and showing a large insensitivity to substrate termination. Employing a combination of surface-sensitive techniques, i.e., low-energy electron microscopy and diffraction, X-ray photoelectron spectroscopy, and scanning tunneling microscopy, we have comprehensively characterized the compact layer and proven its robustness against mixing with the subsequently deposited organic semiconductor layer. Density functional theory calculations show that the robustness arises from a strong interaction of carboxylate groups with the Ag surface, and thus, the BTB in the first layer is energetically favored. Synchrotron radiation photoelectron spectroscopy shows that this layer displays considerable electrical dipoles that can be utilized for work function engineering and electronic alignment of molecular frontier orbitals with respect to the substrate Fermi level. Our work thus provides a widely applicable molecular interlayer and general insights necessary for engineering of charge injection layers for efficient organic electronics.

From a free electron gas to confined states: A mixed island of PTCDA and copper phthalocyanine on Ag(111)

When perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) is deposited on the Ag(111) surface at submonolayer coverage, it forms islands under which the native Shockley state of the Ag(111) surface can no longer be found. Previous work has shown that this state shifts upwards to form a new interface state starting at 0.6 V above the Fermi level, having properties of a two-dimensional electron gas (2DEG). We investigated mixed islands of PTCDA and copper phthalocyanine (CuPc) to study the change in the electronic state with the addition of an electron donor. We no longer observe a 2DEG state and instead identify states at 0.46 and 0.79 V. While one state appears in dI/dV images as an array of one-dimensional quantum wells, our analysis shows that this state does not act as a free electron gas and that the features are instead localized above individual PTCDA molecules.

Binding and electronic level alignment of π-conjugated systems on metals

We review the binding and energy level alignment of π-conjugated systems on metals, a field which during the last two decades has seen tremendous progress both in terms of experimental characterization as well as in the depth of theoretical understanding. Precise measurements of vertical adsorption distances and the electronic structure together with ab initio calculations have shown that most of the molecular systems have to be considered as intermediate cases between weak physisorption and strong chemisorption. In this regime, the subtle interplay of different effects such as covalent bonding, charge transfer, electrostatic and van der Waals interactions yields a complex situation with different adsorption mechanisms. In order to establish a better understanding of the binding and the electronic level alignment of π-conjugated molecules on metals, we provide an up-to-date overview of the literature, explain the fundamental concepts as well as the experimental techniques and discuss typical case studies. Thereby, we relate the geometric with the electronic structure in a consistent picture and cover the entire range from weak to strong coupling.

Spin-orbit split two-dimensional states of BiTeI/Au(1 1 1) interfaces

We present an ab initio study of interfaces formed by placing a single trilayer of BiTeI on the Au(1 1 1) surface. We consider two possible interfaces with the parallel and antiparallel orientation of the trilayer dipole moment with respect to the surface normal, i.e. Te-Bi-I/Au(1 1 1) and I-Bi-Te/Au(1 1 1). We show that the resulting interface state that originates from the modified spin-orbit split surface state of the clean Au(1 1 1) surface resides at high energy above the Fermi level and acquires a large spin-splitting and reversal helicity as compared with the original surface state. The former lowest conduction state of the trilayer, which is one of the hitherto known giant Rashba spin-split states of few-atomic-layer structures, becomes partly occupied. In the I-Bi-Te/Au(1 1 1) interface, this state represents a Rashba system with strong spin-orbit interaction, where the outer branch of the spin-split state is mostly populated.

Energy-level alignment at strongly coupled organic-metal interfaces

Energy-level alignment at organic-metal interfaces plays a crucial role for the performance of organic electronic devices. However, reliable models to predict energetics at strongly coupled interfaces are still lacking. We elucidate contact formation of 1,2,5,6,9,10-coronenehexone (COHON) to the (1 1 1)-surfaces of coinage metals by means of ultraviolet photoelectron spectroscopy, x-ray photoelectron spectroscopy, the x-ray standing wave technique, and density functional theory calculations. While for low COHON thicknesses, the work-functions of the systems vary considerably, for thicker organic films Fermi-level pinning leads to identical work functions of 5.2 eV for all COHON-covered metals irrespective of the pristine substrate work function and the interfacial interaction strength.