1
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Li D, Liu ZF, Yang L. Accelerating GW Calculations of Point Defects with the Defect-Patched Screening Approximation. J Chem Theory Comput 2023; 19:9435-9444. [PMID: 38059814 DOI: 10.1021/acs.jctc.3c01032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
The GW approximation has been widely accepted as an ab initio tool for calculating defect levels with the many-electron effect included. However, the GW simulation cost increases dramatically with the system size, and unfortunately, large supercells are often required to model low-density defects that are experimentally relevant. In this work, we propose to accelerate GW calculations of point defects by reducing the simulation cost of many-electron screening, which is the primary computational bottleneck. The random-phase approximation of many-electron screening is divided into two parts: one is the intrinsic screening, calculated using a unit cell of pristine structures, and the other is the defect-induced screening, calculated using the supercell within a small energy window. Depending on specific defects, one may only need to consider the intrinsic screening or include the defect contribution. This approach avoids the summation of many conduction states of supercells and significantly reduces the simulation cost. We have applied it to calculate various point defects, including neutral and charged defects in two-dimensional and bulk systems with small or large bandgaps. The results are consistent with those from the direct GW simulations. This defect-patched screening approach not only clarifies the roles of defects in many-electron screening but also paves the way to fast screen defect structures/materials for novel applications, including single-photon sources, quantum qubits, and quantum sensors.
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Affiliation(s)
- Du Li
- Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, United States
| | - Zhen-Fei Liu
- Department of Chemistry, Wayne State University, Detroit, Michigan 48202, United States
| | - Li Yang
- Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, United States
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States
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2
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Rizzo DJ, Zhang J, Jessen BS, Ruta FL, Cothrine M, Yan J, Mandrus DG, Nagler SE, Taniguchi T, Watanabe K, Fogler MM, Pasupathy AN, Millis AJ, Rubio A, Hone JC, Dean CR, Basov DN. Polaritonic Probe of an Emergent 2D Dipole Interface. NANO LETTERS 2023; 23:8426-8435. [PMID: 37494638 DOI: 10.1021/acs.nanolett.3c01611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
The use of work-function-mediated charge transfer has recently emerged as a reliable route toward nanoscale electrostatic control of individual atomic layers. Using α-RuCl3 as a 2D electron acceptor, we are able to induce emergent nano-optical behavior in hexagonal boron nitride (hBN) that arises due to interlayer charge polarization. Using scattering-type scanning near-field optical microscopy (s-SNOM), we find that a thin layer of α-RuCl3 adjacent to an hBN slab reduces the propagation length of hBN phonon polaritons (PhPs) in significant excess of what can be attributed to intrinsic optical losses. Concomitant nano-optical spectroscopy experiments reveal a novel resonance that aligns energetically with the region of excess PhP losses. These experimental observations are elucidated by first-principles density-functional theory and near-field model calculations, which show that the formation of a large interfacial dipole suppresses out-of-plane PhP propagation. Our results demonstrate the potential utility of charge-transfer heterostructures for tailoring optoelectronic properties of 2D insulators.
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Affiliation(s)
- Daniel J Rizzo
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Jin Zhang
- Theory Department, Max Planck Institute for Structure and Dynamics of Matter and Center for Free-Electron Laser Science, 22761 Hamburg, Germany
| | - Bjarke S Jessen
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Francesco L Ruta
- Department of Physics, Columbia University, New York, New York 10027, United States
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Matthew Cothrine
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Jiaqiang Yan
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David G Mandrus
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Stephen E Nagler
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Michael M Fogler
- Department of Physics, University of California San Diego, La Jolla, California 92093, United States
| | - Abhay N Pasupathy
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Andrew J Millis
- Department of Physics, Columbia University, New York, New York 10027, United States
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States
| | - Angel Rubio
- Theory Department, Max Planck Institute for Structure and Dynamics of Matter and Center for Free-Electron Laser Science, 22761 Hamburg, Germany
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States
- Nano-Bio Spectroscopy Group, Universidad del País Vasco UPV/EHU, San Sebastián 20018, Spain
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Cory R Dean
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - D N Basov
- Department of Physics, Columbia University, New York, New York 10027, United States
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3
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Liu P, Pei QX, Zhang YW. Failure modes and mechanisms of layered h-BN under local energy injection. Sci Rep 2022; 12:11860. [PMID: 35831468 PMCID: PMC9279385 DOI: 10.1038/s41598-022-16199-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/25/2022] [Accepted: 07/06/2022] [Indexed: 11/21/2022] Open
Abstract
Layered h-BN may serve as an important dielectric and thermal management material in the next-generation nanoelectronics, in which its interactions with electron beam play an important role in device performance and reliability. Previous studies report variations in the failure strength and mode. In this study, using molecular dynamics simulations, we study the effect of local heat injection due to the electron beam and h-BN interaction on the failure start time and failure mode. It is found that at the same heat injection rate, the failure start time decreases with the increase in the layer number. With the introduction of point defects in the heating zone, the failure always starts from the defect site, and the start time can be significantly shortened. For monolayer h-BN, failure always starts within the layer, and once failure starts, its propagation is through melting or vaporization of the h-BN atoms, and no swelling occurs. For multiple layers, once failure starts within the h-BN film, swelling occurs first. With continued heating, the large pressure induced by melting and vaporization can cause the burst of the layers above, leading to the formation of a pit. In the presence of multiple defects within the heating zone, these defects can interact, causing a further reduction in the failure start time. We also reveal the relation of beam power with layer-by-layer failure mode and swelling/pit formation mode. The present work not only reproduces many interesting experimental observations, but also reveal several interesting mechanisms responsible for the failure processes and modes. It is expected that the findings revealed here may provide useful references for the design and engineering of h-BN for device applications.
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Affiliation(s)
- Ping Liu
- Institute of High Performance Computing, A*STAR, Singapore, 138432, Singapore.
| | - Qing-Xiang Pei
- Institute of High Performance Computing, A*STAR, Singapore, 138432, Singapore.
| | - Yong-Wei Zhang
- Institute of High Performance Computing, A*STAR, Singapore, 138432, Singapore
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4
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Zdanowicz E, Herman AP, Opołczyńska K, Gorantla S, Olszewski W, Serafińczuk J, Hommel D, Kudrawiec R. Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface. ACS APPLIED MATERIALS & INTERFACES 2022; 14:6131-6137. [PMID: 35043636 PMCID: PMC8815035 DOI: 10.1021/acsami.1c20352] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2021] [Accepted: 01/05/2022] [Indexed: 05/27/2023]
Abstract
Hexagonal boron nitride (h-BN), together with other members of the van der Waals crystal family, has been studied for over a decade, both in terms of fundamental and applied research. Up to now, the spectrum of h-BN-based devices has broadened significantly, and systems containing the h-BN/III-V junctions have gained substantial interest as building blocks in, inter alia, light emitters, photodetectors, or transistor structures. Therefore, the understanding of electronic phenomena at the h-BN/III-V interfaces becomes a question of high importance regarding device engineering. In this study, we present the investigation of electronic phenomena at the h-BN/GaN interface by means of contactless electroreflectance (CER) spectroscopy. This nondestructive method enables precise determination of the Fermi level position at the h-BN/GaN interface and the investigation of carrier transport across the interface. CER results showed that h-BN induces an enlargement of the surface barrier height at the GaN surface. Such an effect translates to Fermi level pinning deeper inside the GaN band gap. As an explanation, we propose a mechanism based on electron transfer from GaN surface states to the native acceptor states in h-BN. We reinforced our findings by thorough structural characterization and demonstration of the h-BN/GaN Schottky diode. The surface barriers obtained from CER (0.60 ± 0.09 eV for GaN and 0.91 ± 0.12 eV for h-BN/GaN) and electrical measurements are consistent within the experimental accuracy, proving that CER is an excellent tool for interfacial studies of 2D/III-V hybrids.
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Affiliation(s)
- Ewelina Zdanowicz
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
- Department
of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyspiańskiego 27, Wrocław 50-370, Poland
| | - Artur P. Herman
- Department
of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyspiańskiego 27, Wrocław 50-370, Poland
| | - Katarzyna Opołczyńska
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
- Institute
of Experimental Physics, University of Wrocław, pl. M. Borna 9, Wrocław 50-204, Poland
| | - Sandeep Gorantla
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
| | - Wojciech Olszewski
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
| | - Jarosław Serafińczuk
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
- Department
of Nanometrology, Wrocław University
of Science and Technology, Janiszewskiego 11/17, Wrocław 50-372, Poland
| | - Detlef Hommel
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
| | - Robert Kudrawiec
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
- Department
of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyspiańskiego 27, Wrocław 50-370, Poland
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5
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Das B, Maity S, Paul S, Dolui K, Paramanik S, Naskar S, Mohanty SR, Chakraborty S, Ghosh A, Palit M, Watanabe K, Taniguchi T, Menon KSR, Datta S. Manipulating Edge Current in Hexagonal Boron Nitride via Doping and Friction. ACS NANO 2021; 15:20203-20213. [PMID: 34878256 DOI: 10.1021/acsnano.1c08212] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We map spatially correlated electrical current on the stacking boundaries of pristine and doped hexagonal boron nitride (hBN) to distinguish from its insulating bulk via conductive atomic force microscopy (CAFM). While the pristine edges of hBN show an insulating nature, the O-doped edges reveal a current 2 orders of higher even for bulk layers where the direct transmission through tunnel barrier is implausible. Instead, the nonlinear current-voltage characteristics (I-V) at the edges of O-doped hBN can be explained by trap-assisted lowering of the tunnel barrier by adopting a Poole-Frenkel (PF) model. However, in the stacked heterostructure with multilayer graphene (MLG) on top, the buried edge of pristine hBN shows a signature of electron conduction in the scanning mode which contradicts the first-principle calculation of spatial distribution of local density of states (LDOS) data. Enhancement of friction between the Pt-tip and MLG at the step-edge of the heterostructure while scanning in the contact mode has prompted us to construct a phenomenological model where the localization of opposite surface charges on two conducting plates (MLG and Si substrate) containing a dielectric film (hBN) with negatively charged defects creates an internal electric field opposite to the external electric field due to the applied voltage bias in the CAFM setup. An equivalent circuit with a parallel resistor network based on a vertical conducting channel through the MLG/hBN edge and an in-plane surface carrier transport through MLG can successfully analyze the current maps on pristine/doped hBN and the related heterostructures. These results yield fundamental insight into the emerging field of insulatronics in which defect-induced electron transport along the edge can be manipulated in an 1D-2D synergized insulator.
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Affiliation(s)
- Bikash Das
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India
| | - Sujan Maity
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India
| | - Subrata Paul
- Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata 700 064, India
| | - Kapildeb Dolui
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, United States
| | - Subham Paramanik
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India
| | - Sanjib Naskar
- Central Scientific Services, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India
| | - Smruti Ranjan Mohanty
- Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata 700 064, India
| | - Supriya Chakraborty
- Central Scientific Services, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India
| | - Anudeepa Ghosh
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India
| | - Mainak Palit
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Krishnakumar S R Menon
- Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata 700 064, India
| | - Subhadeep Datta
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India
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6
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Krečmarová M, Canet-Albiach R, Pashaei-Adl H, Gorji S, Muñoz-Matutano G, Nesládek M, Martínez-Pastor JP, Sánchez-Royo JF. Extrinsic Effects on the Optical Properties of Surface Color Defects Generated in Hexagonal Boron Nitride Nanosheets. ACS APPLIED MATERIALS & INTERFACES 2021; 13:46105-46116. [PMID: 34520163 PMCID: PMC8485329 DOI: 10.1021/acsami.1c11060] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Indexed: 05/31/2023]
Abstract
Hexagonal boron nitride (hBN) is a wide-band gap van der Waals material able to host light-emitting centers behaving as single photon sources. Here, we report the generation of color defects in hBN nanosheets dispersed on different kinds of substrates by thermal treatment processes. The optical properties of these defects have been studied using microspectroscopy techniques and far-field simulations of their light emission. Using these techniques, we have found that subsequent ozone treatments of the deposited hBN nanosheets improve the optical emission properties of created defects, as revealed by their zero-phonon linewidth narrowing and reduction of background emission. Microlocalized color defects deposited on dielectric substrates show bright (≈1 MHz) and stable room-temperature light emission with zero-phonon line peak energy varying from 1.56 to 2.27 eV, being the most probable value 2.16 eV. In addition to this, we have observed a substrate dependence of the optical performance of the generated color defects. The energy range of the emitters prepared on gold substrates is strongly reduced, as compared to that observed in dielectric substrates or even alumina. We attribute this effect to the quenching of low-energy color defects (these of energies lower than 1.9 eV) when gold substrates are used, which reveals the surface nature of the defects created in hBN nanosheets. Results described here are important for future quantum light experiments and their integration in photonic chips.
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Affiliation(s)
- Marie Krečmarová
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Rodolfo Canet-Albiach
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Hamid Pashaei-Adl
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Setatira Gorji
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Guillermo Muñoz-Matutano
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Miloš Nesládek
- Institute
for Materials Research, Material Physics
Division University of Hasselt, Wetenschapspark 1, B 3590 Diepenbeek, Belgium
| | - Juan P. Martínez-Pastor
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Juan F. Sánchez-Royo
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
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7
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Wen C, Li X, Zanotti T, Puglisi FM, Shi Y, Saiz F, Antidormi A, Roche S, Zheng W, Liang X, Hu J, Duhm S, Roldan JB, Wu T, Chen V, Pop E, Garrido B, Zhu K, Hui F, Lanza M. Advanced Data Encryption using 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100185. [PMID: 34046938 DOI: 10.1002/adma.202100185] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2021] [Revised: 03/23/2021] [Indexed: 05/25/2023]
Abstract
Advanced data encryption requires the use of true random number generators (TRNGs) to produce unpredictable sequences of bits. TRNG circuits with high degree of randomness and low power consumption may be fabricated by using the random telegraph noise (RTN) current signals produced by polarized metal/insulator/metal (MIM) devices as entropy source. However, the RTN signals produced by MIM devices made of traditional insulators, i.e., transition metal oxides like HfO2 and Al2 O3 , are not stable enough due to the formation and lateral expansion of defect clusters, resulting in undesired current fluctuations and the disappearance of the RTN effect. Here, the fabrication of highly stable TRNG circuits with low power consumption, high degree of randomness (even for a long string of 224 - 1 bits), and high throughput of 1 Mbit s-1 by using MIM devices made of multilayer hexagonal boron nitride (h-BN) is shown. Their application is also demonstrated to produce one-time passwords, which is ideal for the internet-of-everything. The superior stability of the h-BN-based TRNG is related to the presence of few-atoms-wide defects embedded within the layered and crystalline structure of the h-BN stack, which produces a confinement effect that avoids their lateral expansion and results in stable operation.
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Affiliation(s)
- Chao Wen
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren Ai Road, Suzhou, 215123, China
| | - Xuehua Li
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren Ai Road, Suzhou, 215123, China
| | - Tommaso Zanotti
- Dipartimento di Ingegneria "Enzo Ferrari", Università di Modena e Reggio Emilia, Modena, 41125, Italy
| | - Francesco Maria Puglisi
- Dipartimento di Ingegneria "Enzo Ferrari", Università di Modena e Reggio Emilia, Modena, 41125, Italy
| | - Yuanyuan Shi
- IMEC, Kapeldreef 75, Heverlee, Leuven, B-3001, Belgium
| | - Fernan Saiz
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Aleandro Antidormi
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, E-08193, Spain
| | - Stephan Roche
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, E-08193, Spain
- ICREA, Institucio Catalana de Recerca i Estudis Avançats, Barcelona, E-08010, Spain
| | - Wenwen Zheng
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren Ai Road, Suzhou, 215123, China
| | - Xianhu Liang
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren Ai Road, Suzhou, 215123, China
| | - Jiaxin Hu
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren Ai Road, Suzhou, 215123, China
| | - Steffen Duhm
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren Ai Road, Suzhou, 215123, China
| | - Juan B Roldan
- Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, Granada, 18071, Spain
| | - Tianru Wu
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
| | - Victoria Chen
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Blas Garrido
- Department of Electronic and Biomedical Engineering, Universitat de Barcelona, Martí i Franquès 1, Barcelona, E-08028, Spain
| | - Kaichen Zhu
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren Ai Road, Suzhou, 215123, China
- Department of Electronic and Biomedical Engineering, Universitat de Barcelona, Martí i Franquès 1, Barcelona, E-08028, Spain
| | - Fei Hui
- Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa, 320003, Israel
| | - Mario Lanza
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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8
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Atomistic Simulations of Defect Production in Monolayer and Bulk Hexagonal Boron Nitride under Low- and High-Fluence Ion Irradiation. NANOMATERIALS 2021; 11:nano11051214. [PMID: 34064369 PMCID: PMC8147816 DOI: 10.3390/nano11051214] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/10/2021] [Revised: 04/27/2021] [Accepted: 04/28/2021] [Indexed: 11/16/2022]
Abstract
Controlled production of defects in hexagonal boron nitride (h-BN) through ion irradiation has recently been demonstrated to be an effective tool for adding new functionalities to this material, such as single-photon generation, and for developing optical quantum applications. Using analytical potential molecular dynamics, we study the mechanisms of vacancy creation in single- and multi-layer h-BN under low- and high-fluence ion irradiation. Our results quantify the densities of defects produced by noble gas ions in a wide range of ion energies and elucidate the types and distribution of defects in the target. The simulation data can directly be used to guide the experiment aimed at the creation of defects of particular types in h-BN targets for single-photon emission, spin-selective optical transitions and other applications by using beams of energetic ions.
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9
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Jara C, Rauch T, Botti S, Marques MAL, Norambuena A, Coto R, Castellanos-Águila JE, Maze JR, Munoz F. First-Principles Identification of Single Photon Emitters Based on Carbon Clusters in Hexagonal Boron Nitride. J Phys Chem A 2021; 125:1325-1335. [PMID: 33554602 DOI: 10.1021/acs.jpca.0c07339] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
A recent study associates carbon with single photon emitters (SPEs) in hexagonal boron nitride (h-BN). This observation, together with the high mobility of carbon in h-BN, suggests the existence of SPEs based on carbon clusters. Here, by means of density functional theory calculations, we studied clusters of substitutional carbon atoms up to tetramers in h-BN. Two different conformations of neutral carbon trimers have zero-point line energies and shifts of the phonon sideband compatible with typical photoluminescence spectra. Moreover, some conformations of two small C clusters next to each other result in photoluminescence spectra similar to those found in the experiments. We also showed that vacancies are unable to reproduce the typical features of the phonon sideband observed in most measurements because of the large spectral weight of low-energy breathing modes, ubiquitous in such defects.
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Affiliation(s)
- Cesar Jara
- LAAS-CNRS, Université de Toulouse, CNRS, 31031 Toulouse, France
| | - Tomáš Rauch
- Institut für Festkörpertheorie und -Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany.,European Theoretical Spectroscopy Facility
| | - Silvana Botti
- Institut für Festkörpertheorie und -Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany.,European Theoretical Spectroscopy Facility
| | - Miguel A L Marques
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06120 Halle/Saale, Germany
| | - Ariel Norambuena
- Centro de Investigación DAiTA Lab, Facultad de Estudios Interdisciplinarios, Universidad Mayor, 7550000 Santiago, Chile
| | - Raul Coto
- Centro de Investigación DAiTA Lab, Facultad de Estudios Interdisciplinarios, Universidad Mayor, 7550000 Santiago, Chile
| | - J E Castellanos-Águila
- Departamento de Estudios Multidisciplinarios, Universidad de Guanajuato, Av. Yacatitas, S/N Col. Yacatitas, Yuriria, Guanajuato 36940, Mexico
| | - Jeronimo R Maze
- Institute of Physics, Pontificia Universidad Católica de Chile, 7820436 Santiago, Chile.,Research Center for Nanoscale and Advanced Materials (CIEN), Pontificia Universidad Católica de Chile, 7820436 Santiago, Chile
| | - Francisco Munoz
- Center for the Development of Nanoscience and Nanotechnology, CEDENNA, 9170124 Santiago, Chile.,Departamento de Física, Facultad de Ciencias, Universidad de Chile, 7800024 Santiago Chile
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Khatri P, Ramsay AJ, Malein RN, Chong HMH, Luxmoore IJ. Optical Gating of Photoluminescence from Color Centers in Hexagonal Boron Nitride. NANO LETTERS 2020; 20:4256-4263. [PMID: 32383892 PMCID: PMC7304068 DOI: 10.1021/acs.nanolett.0c00751] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2020] [Revised: 05/08/2020] [Indexed: 05/05/2023]
Abstract
We report on multicolor excitation experiments with color centers in hexagonal boron nitride at cryogenic temperatures. We demonstrate controllable optical switching between bright and dark states of color centers emitting around 2 eV. Resonant, or quasi-resonant, excitation of photoluminescence also pumps the color center, via a two-photon process, into a dark state, where it becomes trapped. Repumping back into the bright state has a step-like spectrum with a defect-dependent threshold between 2.25 and 2.6 eV. This behavior is consistent with photoionization and charging between optically bright and dark states of the defect. Furthermore, a second zero phonon line, detuned by +0.4 eV, is observed in absorption with orthogonal polarization to the emission, evidencing an additional energy level in the color center.
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Affiliation(s)
- Prince Khatri
- College
of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, United Kingdom
| | - Andrew J. Ramsay
- Hitachi
Cambridge Laboratory, Hitachi Europe Limited, Cambridge, CB3 0HE, United Kingdom
| | - Ralph Nicholas
Edward Malein
- College
of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, United Kingdom
| | - Harold M. H. Chong
- Sustainable
Electronics Technology Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom
| | - Isaac J. Luxmoore
- College
of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, United Kingdom
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