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Tran PTL, Hieu NV, Bui D H, Cuong QN, Hieu NN. First-principles examination of two-dimensional Janus quintuple-layer atomic structures XCrSiN 2 (X = S, Se, and Te). NANOSCALE ADVANCES 2023; 5:3104-3113. [PMID: 37260499 PMCID: PMC10228358 DOI: 10.1039/d3na00261f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Accepted: 05/05/2023] [Indexed: 06/02/2023]
Abstract
In this work, we propose novel two-dimensional Janus XCrSiN2 (X = S, Se, and Te) single-layers and comprehensively investigate their crystal structure, electronic properties, and carrier mobility by using a first-principles method. These configurations are the combination of the CrSi2N4 material and a transition metal dichalcogenide. The X-Cr-SiN2 single-layers are constructed by replacing the N-Si-N atomic layer on one side with chalcogen atoms (S, Se, or Te). The structural characteristics, mechanical or thermal stabilities, and electronic properties are investigated adequately. All three examined configurations are energetically stable and are all small-bandgap semiconductors (<1 eV). Since the mirror symmetry is broken in the Janus material, there exists a remarkable built-in electric field and intrinsic dipole moment. Therefore, the spin-orbit interaction is considered intensively. However, it is observed that the spin-orbit coupling has insignificant effects on the electronic properties of XCrSiN2 (X = S, Se, and Te). Moreover, an external electric field and strain are applied to evaluate the adjustment of the electronic features of the three structures. The transport properties of the proposed configurations are calculated and analyzed systematically, indicating the highly directional isotropy. Our results suggest that the proposed Janus XCrSiN2 could be potential candidates for various applications, especially in nanoscale electronic devices.
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Affiliation(s)
- P T Linh Tran
- Faculty of Physics, Hanoi National University of Education Hanoi 100000 Viet Nam
| | - Nguyen V Hieu
- Physics Department, The University of Danang - University of Science and Education Da Nang 550000 Viet Nam
| | - Hoi Bui D
- Faculty of Physics, University of Education, Hue University Hue 530000 Viet Nam
| | - Q Nguyen Cuong
- Institute of Research and Development, Duy Tan University Da Nang 550000 Viet Nam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Viet Nam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang 550000 Viet Nam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Viet Nam
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Wan W, Guo R, Ge Y, Liu Y. Carrier and phonon transport in 2D InSe and its Janus structures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:133001. [PMID: 36634370 DOI: 10.1088/1361-648x/acb2a5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Accepted: 01/12/2023] [Indexed: 06/17/2023]
Abstract
Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much attention in the scientific community due to its reduced size, extraordinary physical properties, and potential applications in various fields. In this review, we discussed the recent research advancement in the carrier and phonon transport properties of 2D InSe and its related Janus structures. We first introduced the progress in the synthesis of 2D InSe. We summarized the recent experimental and theoretical works on the carrier mobility, thermal conductivity, and thermoelectric characteristics of 2D InSe. Based on the Boltzmann transport equation (BTE), the mechanisms underlying carrier or phonon scattering of 2D InSe were discussed in detail. Moreover, the structural and transport properties of Janus structures based on InSe were also presented, with an emphasis on the theoretical simulations. At last, we discussed the prospects for continued research of 2D InSe.
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Affiliation(s)
- Wenhui Wan
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Rui Guo
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yanfeng Ge
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yong Liu
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
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Nautiyal H, Scardi P. First principles study of SnX 2(X = S, Se) and Janus SnSSe monolayer for thermoelectric applications. NANOTECHNOLOGY 2022; 33:325402. [PMID: 35504261 DOI: 10.1088/1361-6528/ac6c37] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2022] [Accepted: 05/03/2022] [Indexed: 06/14/2023]
Abstract
Tin-based chalcogenides are of increasing interest for thermoelectric applications owing to their low-cost, earth-abundant, and environmentally friendly nature. This is especially true for 2D materials, in which breaking of the structural symmetry plays a crucial role in tuning the electronic properties. 2D materials present a unique opportunity to manipulate the electronic and thermal properties by transforming a monolayer into a Janus monolayer. In the present work, we have investigated the thermoelectric properties of hexagonal SnS2, SnSe2monolayer, and Janus SnSSe monolayer. Density functional theoretical calculations points out the hexagonal Janus SnSSe monolayer as a potential high-performing thermoelectric material. Results for the Janus SnSSe monolayer show an ultra-low thermal conductivity originating from the low group velocity of the low-lying optical modes, leading to superiorzTvalues of 0.5 and 3 at 300 K and 700 K for thep-type doping, respectively.
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Affiliation(s)
- Himanshu Nautiyal
- Department of Civil, Environmental & Mechanical Engineering, University of Trento, via Mesiano 77, 38123, Trento, Italy
| | - Paolo Scardi
- Department of Civil, Environmental & Mechanical Engineering, University of Trento, via Mesiano 77, 38123, Trento, Italy
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Vu TV, Linh TPT, Phuc HV, Duque CA, Kartamyshev AI, Hieu NN. Structural, electronic, and transport properties of Janus GaIn X2( X=S, Se, Te) monolayers: first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:045501. [PMID: 34670205 DOI: 10.1088/1361-648x/ac316e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Accepted: 10/20/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional Janus monolayers have outstanding electronic and transport properties due to their asymmetric atomic structures. In the present work, we systematically study the structural, electronic, and transport properties of the Janus GaInX2(X= S, Se, Te) monolayers by using the first-principles calculations. The stability of the investigated monolayers is confirmed via the analysis of vibrational spectrum and molecular dynamics simulations. Our calculations demonstrate that while GaInS2and GaInSe2monolayers are direct semiconductors, GaInTe2monolayer exhibits the characteristics of an indirect semiconductor. The band gap of GaInX2decreases when the chalcogen elementXvaries from S to Te. Obtained results reveal that small spin-orbit splitting energy in the valence band is found around the Γ point of the Brillouin zone when the spin-orbit coupling is included. Interestingly, GaInS2and GaInSe2have high and directional isotropic electron mobility meanwhile the directional anisotropy of the electron mobility is found in the Janus GaInTe2monolayer. Our findings not only present superior physical properties of GaInX2monolayers but also show promising potential applications of these materials in nanoelectronic devices.
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Affiliation(s)
- Tuan V Vu
- Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City 700000, Vietnam
- Faculty of Electrical & Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City 700000, Vietnam
| | - Tran P T Linh
- Faculty of Physics, Hanoi National University of Education, Ha Noi 100000, Vietnam
| | - Huynh V Phuc
- Division of Theoretical Physics, Dong Thap University, Cao Lanh 870000, Vietnam
| | - C A Duque
- Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia
| | - A I Kartamyshev
- Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City 700000, Vietnam
- Faculty of Electrical & Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City 700000, Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
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Do TN, Hieu NN, Poklonski NA, Thanh Binh NT, Nguyen CQ, Hien ND. Computational insights into structural, electronic, and optical properties of Janus GeSO monolayer. RSC Adv 2021; 11:28381-28387. [PMID: 35480779 PMCID: PMC9038035 DOI: 10.1039/d1ra05424d] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Accepted: 08/17/2021] [Indexed: 11/21/2022] Open
Abstract
Although O is an element of chalcogen group, the study of two-dimensional (2D) O-based Janus dichalcogenides/monochalcogenides, especially their 1T-phase, has not been given sufficient attention. In this work, we systematically investigate the structural, electronic, and optical properties of 1T Janus GeSO monolayer by using the density functional theory. Via the analysis of phonon spectrum and evaluation of elastic constants, the GeSO monolayer is confirmed to be dynamically and mechanically stable. Calculated results for the elastic constants demonstrate that the Janus GeSO monolayer is much mechanically flexible than other 2D materials due to its small Young's modulus. At the ground state, while both GeS2 and GeO2 monolayers are indirect semiconductors, the Janus GeSO monolayer is found to be a direct band gap semiconductor. Further, effective masses of both electrons and holes are predicted to be directionally isotropic. The Janus GeSO monolayer has a broad absorption spectrum, which is activated from the visible light region and its absorption intensity is very high in the near-ultraviolet region. The calculated results not only systematically provide the fundamental physical properties of GeSO monolayer, but also stimulate scientists to further studying its importance both theoretically and experimentally.
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Affiliation(s)
- Thi-Nga Do
- Laboratory of Magnetism and Magnetic Materials, Advanced Institute of Materials Science, Ton Duc Thang University Ho Chi Minh City Vietnam .,Faculty of Applied Sciences, Ton Duc Thang University Ho Chi Minh City Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam .,Faculty of Environmental and Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - N A Poklonski
- Faculty of Physics, Belarusian State University Minsk 220030 Belarus
| | | | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam .,Faculty of Environmental and Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Nguyen D Hien
- Institute of Applied Technology, Thu Dau Mot University Binh Duong Province 75000 Vietnam
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